Metalorganic Vapor Phase Epitaxy of III-Nitride Light-Emitting Diodes on Nanopatterned AGOG Sapphire Substrate by Abbreviated Growth Mode
Yik-Khoon Ee, Biser, J.M., Cao, W., Chan, H.M., Vinci, R.P., Tansu, N.
Published in IEEE journal of selected topics in quantum electronics (01.07.2009)
Published in IEEE journal of selected topics in quantum electronics (01.07.2009)
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Journal Article
Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500-540 nm
Hongping Zhao, Arif, R.A., Tansu, N.
Published in IEEE journal of selected topics in quantum electronics (01.07.2009)
Published in IEEE journal of selected topics in quantum electronics (01.07.2009)
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Journal Article
Optimization of Light Extraction Efficiency of III-Nitride LEDs With Self-Assembled Colloidal-Based Microlenses
Yik-Khoon Ee, Kumnorkaew, P., Arif, R.A., Hua Tong, Hongping Zhao, Gilchrist, J.F., Tansu, N.
Published in IEEE journal of selected topics in quantum electronics (01.07.2009)
Published in IEEE journal of selected topics in quantum electronics (01.07.2009)
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Journal Article
Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes
Arif, R.A., Hongping Zhao, Yik-Khoon Ee, Tansu, N.
Published in IEEE journal of quantum electronics (01.06.2008)
Published in IEEE journal of quantum electronics (01.06.2008)
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Journal Article
Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime
Zhao, H.P., Liu, G.Y., Li, X.-H., Arif, R.A., Huang, G.S., Poplawsky, J.D., Tafon Penn, S., Dierolf, V., Tansu, N.
Published in IET optoelectronics (01.12.2009)
Published in IET optoelectronics (01.12.2009)
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Journal Article
Characteristics of InGaAsN-GaAsSb type-II “W” quantum wells
Yeh, J.-Y., Mawst, L.J., Khandekar, A.A., Kuech, T.F., Vurgaftman, I., Meyer, J.R., Tansu, N.
Published in Journal of crystal growth (01.01.2006)
Published in Journal of crystal growth (01.01.2006)
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Journal Article
Conference Proceeding
Carrier Recombination Dynamics Investigations of Strain-Compensated InGaAsN Quantum Wells
Lifang Xu, Patel, D., Menoni, C. S., Pikal, J. M., Jeng-Ya Yeh, Huang, J. Y. T., Mawst, L. J., Tansu, N.
Published in IEEE photonics journal (01.12.2012)
Published in IEEE photonics journal (01.12.2012)
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Journal Article
MOCVD-Grown Dilute Nitride Type II Quantum Wells
Mawst, L.J., Huang, J.Y.-T., Xu, D.P., Jeng-Ya Yeh, Tsvid, G., Kuech, T.F., Tansu, N.
Published in IEEE journal of selected topics in quantum electronics (01.07.2008)
Published in IEEE journal of selected topics in quantum electronics (01.07.2008)
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Journal Article
Spontaneous Radiative Efficiency and Gain Characteristics of Strained-Layer InGaAs-GaAs Quantum-Well Lasers
Tsvid, G., Kirch, J., Mawst, L.J., Kanskar, M., Cai, J., Arif, R.A., Tansu, N., Smowton, P.M., Blood, P.
Published in IEEE journal of quantum electronics (01.08.2008)
Published in IEEE journal of quantum electronics (01.08.2008)
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Journal Article
Increased monomolecular recombination in MOCVD grown 1.3-[mu]m InGaAsN-GaAsP-GaAs QW lasers from carrier lifetime measurements
O. Anton, O. Anton, C.S. Menoni, C.S. Menoni, J.Y. Yeh, J.Y. Yeh, L.J. Mawst, L.J. Mawst, J.M. Pikal, J.M. Pikal, N. Tansu, N. Tansu
Published in IEEE photonics technology letters (01.05.2005)
Published in IEEE photonics technology letters (01.05.2005)
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Journal Article
Temperature analysis and characteristics of highly strained InGaAs-GaAsP-GaAs (/spl lambda/ > 1.17 /spl mu/m) quantum-well lasers
Tansu, N., Ying-Lan Chang, Takeuchi, T., Bour, D.P., Corzine, S.W., Tan, M.R.T., Mawst, L.J.
Published in IEEE journal of quantum electronics (01.06.2002)
Published in IEEE journal of quantum electronics (01.06.2002)
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Journal Article