Improved Electrical Performance of Multilayer MoS2 Transistor With NH3-Annealed ALD HfTiO Gate Dielectric
Ming Wen, Jingping Xu, Lu Liu, Pui-To Lai, Wing-Man Tang
Published in IEEE transactions on electron devices (01.03.2017)
Published in IEEE transactions on electron devices (01.03.2017)
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Journal Article
Repair of Oxygen Vacancies and Improvement of HfO2/MoS2 Interface by NH3-Plasma Treatment
Zhao, Xinyuan, Xu, Jingping, Liu, Lu, Lai, Pui-To, Tang, Wing-Man
Published in IEEE transactions on electron devices (01.10.2019)
Published in IEEE transactions on electron devices (01.10.2019)
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Journal Article
Improved Interfacial and Electrical Properties of GaAs MOS Capacitor With LaON/TiON Multilayer Composite Gate Dielectric and LaON as Interfacial Passivation Layer
Lu, Han-Han, Liu, Lu, Xu, Jing-Ping, Lai, Pui-To, Tang, Wing-Man
Published in IEEE transactions on electron devices (01.04.2017)
Published in IEEE transactions on electron devices (01.04.2017)
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Journal Article
Universal energy-level alignment of molecules on metal oxides
Greiner, Mark T., Helander, Michael G., Tang, Wing-Man, Wang, Zhi-Bin, Qiu, Jacky, Lu, Zheng-Hong
Published in Nature materials (06.11.2011)
Published in Nature materials (06.11.2011)
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Journal Article
Improvements of Interfacial and Electrical Properties for Ge MOS Capacitor by Using TaYON Interfacial Passivation Layer and Fluorine Incorporation
Huang, Yong, Xu, Jing-Ping, Liu, Lu, Cheng, Zhi-Xiang, Lai, Pui-To, Tang, Wing-Man
Published in IEEE transactions on electron devices (01.09.2017)
Published in IEEE transactions on electron devices (01.09.2017)
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Journal Article
Impact of Nitrogen Incorporation on the Interface Between Ge and La2O3 or Y2O3 Gate Dielectric: A Study on the Formation of Germanate
Cheng, Zhi-Xiang, Liu, Lu, Jing-Ping, Xu, Huang, Yong, Pui-To Lai, Wing-Man, Tang
Published in IEEE transactions on electron devices (01.12.2016)
Published in IEEE transactions on electron devices (01.12.2016)
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Journal Article
Improved electrical performance of multilayer MoS2 transistor by incorporating Al into host HfO2 as gate dielectric
Zhao, Xinyuan, Xu, Jingping, Liu, Lu, Lai, Pui-To, Tang, Wing-Man
Published in Applied physics express (01.06.2019)
Published in Applied physics express (01.06.2019)
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Journal Article
Plasma-Nitrided Ga2O3(Gd2O3) as Interfacial Passivation Layer for InGaAs Metal-Oxide- Semiconductor Capacitor With HfTiON Gate Dielectric
Li-Sheng Wang, Jing-Ping Xu, Lu Liu, Han-Han Lu, Pui-To Lai, Wing-Man Tang
Published in IEEE transactions on electron devices (01.04.2015)
Published in IEEE transactions on electron devices (01.04.2015)
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Journal Article
Influences of Remote Coulomb and Interface-Roughness Scatterings on Electron Mobility of InGaAs nMOSFET With High-k Stacked Gate Dielectric
Wang, Li-Sheng, Xu, Jing-Ping, Liu, Lu, Huang, Yuan, Lu, Han-Han, Lai, Pui-To, Tang, Wing-Man
Published in IEEE transactions on nanotechnology (01.09.2015)
Published in IEEE transactions on nanotechnology (01.09.2015)
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Journal Article
Interfacial and Electrical Properties of Ge MOS Capacitor by ZrLaON Passivation Layer and Fluorine Incorporation
Huang, Yong, Xu, Jing-Ping, Liu, Lu, Cheng, Zhi-Xiang, Lai, Pui-To, Tang, Wing-Man
Published in IOP conference series. Materials Science and Engineering (01.09.2017)
Published in IOP conference series. Materials Science and Engineering (01.09.2017)
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Journal Article
Optimizing Al-doped ZrO2 as the gate dielectric for MoS2 field-effect transistors
Song, Xingjuan, Xu, Jingping, Liu, Lu, Deng, Yuheng, Lai, Pui-To, Tang, Wing-Man
Published in Nanotechnology (27.03.2020)
Published in Nanotechnology (27.03.2020)
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Journal Article