High-Power Schottky Diodes with a Negative-Differential-Resistance Portion in the I–V Characteristic
Tandoev, A. G., Mnatsakanov, T. T., Yurkov, S. N.
Published in Semiconductors (Woodbury, N.Y.) (01.01.2021)
Published in Semiconductors (Woodbury, N.Y.) (01.01.2021)
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Journal Article
S-Shaped I–V Characteristics of High-Power Schottky Diodes at High Current Densities
Tandoev, A. G., Mnatsakanov, T. T., Yurkov, S. N.
Published in Semiconductors (Woodbury, N.Y.) (01.05.2020)
Published in Semiconductors (Woodbury, N.Y.) (01.05.2020)
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Journal Article
Multidimensional dU/dT Effect in High-Power Thyristors
Yurkov, S. N., Mnatsakanov, T. T., Tandoev, A. G.
Published in Semiconductors (Woodbury, N.Y.) (2020)
Published in Semiconductors (Woodbury, N.Y.) (2020)
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Journal Article
Experimental verification of a new approach to the analysis of the quasineutral carrier transport in semiconductors and semiconductor structures
Shuman, V B, Mnatsakanov, T T, Levinshtein, M E, Tandoev, A G, Yurkov, S N, Palmour, J W
Published in Semiconductor science and technology (01.08.2011)
Published in Semiconductor science and technology (01.08.2011)
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Journal Article
Switching characteristics of an MOSFET-controlled high-power integrated thyristor
Grekhov, I. V., Yurkov, S. N., Mnatsakanov, T. T., Tandoev, A. G., Kostina, L. S.
Published in Technical physics (01.05.2006)
Published in Technical physics (01.05.2006)
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Journal Article
A new physical mechanism for the formation of critical turn-on charge in thyristor structures
Mnatsakanov, T. T., Yurkov, S. N., Tandoev, A. G.
Published in Semiconductors (Woodbury, N.Y.) (01.03.2005)
Published in Semiconductors (Woodbury, N.Y.) (01.03.2005)
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Journal Article
Static and dynamic characteristics of an MOS-controlled high-power integrated thyristor
Grekhov, I. V., Mnatsakanov, T. T., Yurkov, S. N., Tandoev, A. G., Kostina, L. S.
Published in Technical physics (01.01.2005)
Published in Technical physics (01.01.2005)
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Journal Article
Temperature dependence of turn-on processes in 4H–SiC thyristors
Levinshtein, Michael E, Mnatsakanov, Tigran T, Ivanov, Pavel A, Agarwal, Anant K, Palmour, John W, Rumyantsev, Sergey L, Tandoev, Aleksey G, Yurkov, Sergey N
Published in Solid-state electronics (01.03.2001)
Published in Solid-state electronics (01.03.2001)
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Journal Article
High-Voltage Silicon-Carbide Thyristor with an n-type Blocking Base
Levinshtein, M. E., Mnatsakanov, T. T., Yurkov, S. N., Tandoev, A. G., Ryu, Sei-Hyung, Palmour, J. W.
Published in Semiconductors (Woodbury, N.Y.) (01.03.2016)
Published in Semiconductors (Woodbury, N.Y.) (01.03.2016)
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Journal Article
Violation of neutrality and occurrence of S-shaped current-voltage characteristic for doped semiconductors under double injection
Mnatsakanov, T. T., Tandoev, A. G., Levinshtein, M. E., Yurkov, S. N., Palmour, J. W.
Published in Semiconductors (Woodbury, N.Y.) (01.03.2013)
Published in Semiconductors (Woodbury, N.Y.) (01.03.2013)
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Journal Article
Modulation waves of charge carriers in n- and p-type semiconductor layers
Mnatsakanov, T. T., Levinshtein, M. E., Tandoev, A. G., Yurkov, S. N.
Published in Semiconductors (Woodbury, N.Y.) (01.02.2011)
Published in Semiconductors (Woodbury, N.Y.) (01.02.2011)
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Journal Article
The critical charge concept for 4H-SiC-based thyristors
Mnatsakanov, Tigran T., Yurkov, Sergey N., Levinshtein, Michael E., Tandoev, Aleksey G., Agarwal, Anant K., Palmour, John W.
Published in Solid-state electronics (01.09.2003)
Published in Solid-state electronics (01.09.2003)
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