Search Results - "Tan, Ava J." :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

Enhanced ferroelectricity in ultrathin films grown directly on silicon

Enhanced ferroelectricity in ultrathin films grown directly on silicon

by Cheema, Suraj S, Kwon, Daewoong, Shanker, Nirmaan, Dos Reis, Roberto, Hsu, Shang-Lin, Xiao, Jun, Zhang, Haigang, Wagner, Ryan, Datar, Adhiraj, McCarter, Margaret R, Serrao, Claudy R, Yadav, Ajay K, Karbasian, Golnaz, Hsu, Cheng-Hsiang, Tan, Ava J, Wang, Li-Chen, Thakare, Vishal, Zhang, Xiang, Mehta, Apurva, Karapetrova, Evguenia, Chopdekar, Rajesh V, Shafer, Padraic, Arenholz, Elke, Hu, Chenming, Proksch, Roger, Ramesh, Ramamoorthy, Ciston, Jim, Salahuddin, Sayeef
Published in Nature (London) (23.04.2020)

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Journal Article

A Nitrided Interfacial Oxide for Interface State Improvement in Hafnium Zirconium Oxide-Based Ferroelectric Transistor Technology

A Nitrided Interfacial Oxide for Interface State Improvement in Hafnium Zirconium Oxide-Based Ferroelectric Transistor Technology

by Tan, Ava J., Yadav, Ajay K., Chatterjee, Korok, Daewoong Kwon, Sangwan Kim, Chenming Hu, Salahuddin, Sayeef
Published in IEEE electron device letters (01.01.2018)

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Journal Article

Negative Capacitance FET With 1.8-nm-Thick Zr-Doped HfO2 Oxide

Negative Capacitance FET With 1.8-nm-Thick Zr-Doped HfO2 Oxide

by Kwon, Daewoong, Cheema, Suraj, Shanker, Nirmaan, Chatterjee, Korok, Liao, Yu-Hung, Tan, Ava J., Hu, Chenming, Salahuddin, Sayeef
Published in IEEE electron device letters (01.06.2019)

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Journal Article

Improved Subthreshold Swing and Short Channel Effect in FDSOI n-Channel Negative Capacitance Field Effect Transistors

Improved Subthreshold Swing and Short Channel Effect in FDSOI n-Channel Negative Capacitance Field Effect Transistors

by Kwon, Daewoong, Chatterjee, Korok, Tan, Ava J., Yadav, Ajay K., Zhou, Hong, Sachid, Angada B., Reis, Roberto Dos, Hu, Chenming, Salahuddin, Sayeef
Published in IEEE electron device letters (01.02.2018)

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Journal Article

Experimental Demonstration of a Ferroelectric HfO2-Based Content Addressable Memory Cell

Experimental Demonstration of a Ferroelectric HfO2-Based Content Addressable Memory Cell

by Tan, Ava J., Chatterjee, Korok, Zhou, Jiuren, Kwon, Daewoong, Liao, Yu-Hung, Cheema, Suraj, Hu, Chenming, Salahuddin, Sayeef
Published in IEEE electron device letters (01.02.2020)

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Journal Article

Near Threshold Capacitance Matching in a Negative Capacitance FET With 1 nm Effective Oxide Thickness Gate Stack

Near Threshold Capacitance Matching in a Negative Capacitance FET With 1 nm Effective Oxide Thickness Gate Stack

by Kwon, Daewoong, Cheema, Suraj, Lin, Yen-Kai, Liao, Yu-Hung, Chatterjee, Korok, Tan, Ava J., Hu, Chenming, Salahuddin, Sayeef
Published in IEEE electron device letters (01.01.2020)

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Journal Article

Challenges to Partial Switching of Hf0.8Zr0.2O2 Gated Ferroelectric FET for Multilevel/Analog or Low-Voltage Memory Operation

Challenges to Partial Switching of Hf0.8Zr0.2O2 Gated Ferroelectric FET for Multilevel/Analog or Low-Voltage Memory Operation

by Chatterjee, Korok, Kim, Sangwan, Karbasian, Golnaz, Kwon, Daewoong, Tan, Ava J., Yadav, Ajay K., Serrao, Claudy R., Hu, Chenming, Salahuddin, Sayeef
Published in IEEE electron device letters (01.09.2019)

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Journal Article

Anomalously Beneficial Gate-Length Scaling Trend of Negative Capacitance Transistors

Anomalously Beneficial Gate-Length Scaling Trend of Negative Capacitance Transistors

by Liao, Yu-Hung, Kwon, Daewoong, Lin, Yen-Kai, Tan, Ava J., Hu, Chenming, Salahuddin, Sayeef
Published in IEEE electron device letters (01.11.2019)

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Journal Article

Electric Field-Induced Permittivity Enhancement in Negative-Capacitance FET

Electric Field-Induced Permittivity Enhancement in Negative-Capacitance FET

by Liao, Yu-Hung, Kwon, Daewoong, Cheema, Suraj, Shanker, Nirmaan, Tan, Ava J., Kao, Ming-Yen, Wang, Li-Chen, Hu, Chenming, Salahuddin, Sayeef
Published in IEEE transactions on electron devices (01.03.2021)

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Journal Article

Hot Electrons as the Dominant Source of Degradation for Sub-5nm HZO FeFETs

Hot Electrons as the Dominant Source of Degradation for Sub-5nm HZO FeFETs

by Tan, Ava J., Pesic, Milan, Larcher, Luca, Liao, Yu-Hung, Wang, Li-Chen, Bae, Jong-Ho, Hu, Chenming, Salahuddin, Sayeef
Published in 2020 IEEE Symposium on VLSI Technology (01.06.2020)

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Conference Proceeding

Publisher Correction: Enhanced ferroelectricity in ultrathin films grown directly on silicon

Publisher Correction: Enhanced ferroelectricity in ultrathin films grown directly on silicon

by Cheema, Suraj S, Kwon, Daewoong, Shanker, Nirmaan, Dos Reis, Roberto, Hsu, Shang-Lin, Xiao, Jun, Zhang, Haigang, Wagner, Ryan, Datar, Adhiraj, McCarter, Margaret R, Serrao, Claudy R, Yadav, Ajay K, Karbasian, Golnaz, Hsu, Cheng-Hsiang, Tan, Ava J, Wang, Li-Chen, Thakare, Vishal, Zhang, Xiang, Mehta, Apurva, Karapetrova, Evguenia, Chopdekar, Rajesh V, Shafer, Padraic, Arenholz, Elke, Hu, Chenming, Proksch, Roger, Ramesh, Ramamoorthy, Ciston, Jim, Salahuddin, Sayeef
Published in Nature (London) (01.05.2020)

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Journal Article

Negative Capacitance, n-Channel, Si FinFETs: Bi-directional Sub-60 mV/dec, Negative DIBL, Negative Differential Resistance and Improved Short Channel Effect

Negative Capacitance, n-Channel, Si FinFETs: Bi-directional Sub-60 mV/dec, Negative DIBL, Negative Differential Resistance and Improved Short Channel Effect

by Zhou, Hong, Kwon, Daewoong, Sachid, Angada B., Liao, Yuhung, Chatterjee, Korok, Tan, Ava J., Yadav, Ajay K., Hu, Chenming, Salahuddin, Sayeef
Published in 2018 IEEE Symposium on VLSI Technology (01.06.2018)

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Conference Proceeding

Reliability of Ferroelectric HfO2-based Memories: From MOS Capacitor to FeFET

Reliability of Ferroelectric HfO2-based Memories: From MOS Capacitor to FeFET

by Tan, Ava J., Wang, Li-Chen, Liao, Yu-Hung, Bae, Jong-Ho, Hu, Chenming, Salahuddin, Sayeef
Published in 2020 Device Research Conference (DRC) (01.06.2020)

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Conference Proceeding

Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf0.8Zr0.2O2, High Endurance and Breakdown Recovery

Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf0.8Zr0.2O2, High Endurance and Breakdown Recovery

by Chatterjee, Korok, Sangwan Kim, Karbasian, Golnaz, Tan, Ava J., Yadav, Ajay K., Khan, Asif I., Chenming Hu, Salahuddin, Sayeef
Published in IEEE electron device letters (01.10.2017)

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Journal Article

Experimental Demonstration of a Ferroelectric HfO 2 -Based Content Addressable Memory Cell

Experimental Demonstration of a Ferroelectric HfO 2 -Based Content Addressable Memory Cell

by Tan, Ava J., Chatterjee, Korok, Zhou, Jiuren, Kwon, Daewoong, Liao, Yu-Hung, Cheema, Suraj, Hu, Chenming, Salahuddin, Sayeef
Published in IEEE electron device letters (01.02.2020)

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Journal Article

Negative Capacitance FET With 1.8-nm-Thick Zr-Doped HfO 2 Oxide

Negative Capacitance FET With 1.8-nm-Thick Zr-Doped HfO 2 Oxide

by Kwon, Daewoong, Cheema, Suraj, Shanker, Nirmaan, Chatterjee, Korok, Liao, Yu-Hung, Tan, Ava J., Hu, Chenming, Salahuddin, Sayeef
Published in IEEE electron device letters (01.06.2019)

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Journal Article

Challenges to Partial Switching of Hf 0.8 Zr 0.2 O 2 Gated Ferroelectric FET for Multilevel/Analog or Low-Voltage Memory Operation

Challenges to Partial Switching of Hf 0.8 Zr 0.2 O 2 Gated Ferroelectric FET for Multilevel/Analog or Low-Voltage Memory Operation

by Chatterjee, Korok, Kim, Sangwan, Karbasian, Golnaz, Kwon, Daewoong, Tan, Ava J., Yadav, Ajay K., Serrao, Claudy R., Hu, Chenming, Salahuddin, Sayeef
Published in IEEE electron device letters (01.09.2019)

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Journal Article

Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf 0.8 Zr 0.2 O 2 , High Endurance and Breakdown Recovery

Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf 0.8 Zr 0.2 O 2 , High Endurance and Breakdown Recovery

by Chatterjee, Korok, Kim, Sangwan, Karbasian, Golnaz, Tan, Ava J., Yadav, Ajay K., Khan, Asif I., Hu, Chenming, Salahuddin, Sayeef
Published in IEEE electron device letters (01.10.2017)

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Journal Article

Response Speed of Negative Capacitance FinFETs

Response Speed of Negative Capacitance FinFETs

by Kwon, Daewoong, Liao, Yu-Hung, Lin, Yen-Kai, Duarte, Juan Pablo, Chatterjee, Korok, Tan, Ava J., Yadav, Ajay K., Hu, Chenming, Krivokapic, Zoran, Salahuddin, Sayeef
Published in 2018 IEEE Symposium on VLSI Technology (01.06.2018)

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Conference Proceeding

Ferroelectric Si-doped HfO2 Capacitors for Next-Generation Memories

Ferroelectric Si-doped HfO2 Capacitors for Next-Generation Memories

by Tan, Ava J., Zhu, Zhongwei, Choe, Hwan Sung, Hu, Chenming, Salahuddin, Sayeef, Yoon, Alex
Published in 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) (01.04.2019)

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Conference Proceeding