Formation of Oxygen-Containing Centers in Irradiated Silicon Crystals during Annealing in the Temperature Range of 450–700°С
Talkachova, E. A., Murin, L. I., Medvedeva, I. F., Korshunov, F. P., Markevich, V. P.
Published in Inorganic materials : applied research (01.09.2020)
Published in Inorganic materials : applied research (01.09.2020)
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