InAs and InAsSb LEDs with built-in cavities
Aidaraliev, M, Zotova, N V, Il'inskaya, N D, Karandashev, S A, Matveev, B A, Remennyi, M A, Stus', N M, Talalakin, G N
Published in Semiconductor science and technology (01.04.2003)
Published in Semiconductor science and technology (01.04.2003)
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Journal Article
Low-threshold long-wave lasers ( lambda =3.0-3.6 mu m) based on III-V alloys
Aydaraliev, M, Zotova, N V, Karandashov, S A, Matveev, B A, Stus', N M, Talalakin, G N
Published in Semiconductor science and technology (01.08.1993)
Published in Semiconductor science and technology (01.08.1993)
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Journal Article
Radiation recombination in InAsSb/InAsSbP double heterostructures
Aydaraliev, M, Bresler, M S, Gusev, O B, Karandashov, S A, Matveev, B A, Stus, M N, Talalakin, G N, Zotova, N V
Published in Semiconductor science and technology (01.02.1995)
Published in Semiconductor science and technology (01.02.1995)
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Journal Article
Optically pumped “immersion-lens” infrared light emitting diodes based on narrow-gap III–V semiconductors
Aidaraliev, M., Zotova, N. V., Karandashev, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Talalakin, G. N.
Published in Semiconductors (Woodbury, N.Y.) (01.07.2002)
Published in Semiconductors (Woodbury, N.Y.) (01.07.2002)
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Journal Article
Lattice-matched GaInPAsSb/InAs structures for devices of infrared optoelectronics
Aidaraliev, M., Zotova, N. V., Karandashev, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Talalakin, G. N., Shustov, V. V., Kuznetsov, V. V., Kognovitskaya, E. A.
Published in Semiconductors (Woodbury, N.Y.) (01.08.2002)
Published in Semiconductors (Woodbury, N.Y.) (01.08.2002)
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Journal Article
Two-wavelength emission from a GaInPAsSb/InAs structure with a broken-gap isotype heterojunction and a p-n junction in the substrate
Aidaraliev, M., Zotova, N. V., Karandashev, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Talalakin, G. N., Shustov, V. V.
Published in Technical physics letters (01.12.2002)
Published in Technical physics letters (01.12.2002)
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Journal Article
Negative luminescence in p-InAsSbP/n-InAs diodes
Aidaraliev, M., Zotova, N. V., Karandashev, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Talalakin, G. N.
Published in Semiconductors (Woodbury, N.Y.) (01.03.2001)
Published in Semiconductors (Woodbury, N.Y.) (01.03.2001)
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Journal Article
Gadolinium-doped InGaAsSb solid solutions on an InAs substrate for light-emitting diodes operating in the spectral interval λ=3–5 µm
Zotova, N. V., Karandashev, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Talalakin, G. N.
Published in Semiconductors (Woodbury, N.Y.) (01.08.1999)
Published in Semiconductors (Woodbury, N.Y.) (01.08.1999)
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Journal Article
High power InGaAsSb(Gd)/InAsSbP double heterostructure lasers (λ=3.3 µm)
Aydaraliev, M., Zotova, N. V., Karandashev, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Talalakin, G. N.
Published in Semiconductors (Woodbury, N.Y.) (01.10.2001)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2001)
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Journal Article
Optically pumped mid-infrared InGaAs(Sb) LEDs
Zotova, N. V., Karandashev, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Talalakin, G. N., Shustov, V. V.
Published in Semiconductors (Woodbury, N.Y.) (01.03.2001)
Published in Semiconductors (Woodbury, N.Y.) (01.03.2001)
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Journal Article
Spectral characteristics of lasers based on InGaAsSb/InAsSbP double heterostructures (λ=3.0–3.6 µm)
Aidaraliev, M., Zotova, N. V., Karandashev, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Talalakin, G. N., Beyer, T., Brunner, R.
Published in Semiconductors (Woodbury, N.Y.) (01.01.2000)
Published in Semiconductors (Woodbury, N.Y.) (01.01.2000)
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Journal Article
InGaAsSb(Gd)/InAsSbP double heterostructure lasers (λ=3.0–3.3 µm) for diode laser spectroscopy
Aidaraliev, M., Beyer, T., Zotova, N. V., Karandashev, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Talalakin, G. N.
Published in Semiconductors (Woodbury, N.Y.) (01.01.2000)
Published in Semiconductors (Woodbury, N.Y.) (01.01.2000)
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Journal Article
Gain and internal losses in InGaAsSb/InAsSbP double-heterostructure lasers
Aidaraliev, M., Zotova, N. V., Karandashev, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Talalakin, G. N.
Published in Semiconductors (Woodbury, N.Y.) (01.06.1999)
Published in Semiconductors (Woodbury, N.Y.) (01.06.1999)
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Journal Article
Midwave (3–4 μm) InAsSbP/InGaAsSb infrared diode lasers as a source for gas sensors
Aidaraliev, M., Zotova, N.V., Karandashov, S.A., Matveev, B.A., Stus', N.M., Talalakin, G.N.
Published in Infrared physics & technology (01.02.1996)
Published in Infrared physics & technology (01.02.1996)
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Journal Article
Tunable mid-IR diode lasers based on InGaAsSb/InAsSbP DH
Zotova, N.V., Karan-ov, S.A., Matveev, B.A., Stus', N.M., Talalakin, G.N., Remennyi, M.A.
Published in Spectrochimica acta. Part A, Molecular and biomolecular spectroscopy (30.07.1996)
Published in Spectrochimica acta. Part A, Molecular and biomolecular spectroscopy (30.07.1996)
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Journal Article
InAs-based laser double heterostructures with p-n junction in the active region
Bresler, M.S., Gusev, O.B., Zotova, N.V., Aydaraliev, M., Karandashev, S.A., Matveev, B.A., Stus', N.M., Talalakin, G.N.
Published in Optical materials (01.07.1996)
Published in Optical materials (01.07.1996)
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Journal Article
Emissive characteristics of mesa-stripe lasers (λ=3.0–3.6 μm) made from InGaAsSb/InAsSbP double heterostructures
Aidaraliev, M., Zotova, N. V., Karandashev, S. A., Matveev, B. A., Remenny, M. A., Stus’, N. M., Talalakin, G. N.
Published in Technical physics letters (01.06.1998)
Published in Technical physics letters (01.06.1998)
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Journal Article
Fiber-optic detector using a mid-infrared diode laser and an acoustooptic modulator
Zotova, N. V., Karandashev, S. A., Kulakova, L. A., Matveev, B. A., Melekh, B. T., Stus’, N. M., Talalakin, G. N.
Published in Technical physics letters (01.10.1997)
Published in Technical physics letters (01.10.1997)
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