Theoretical analysis of the effect of conduction band offset of window/CIS layers on performance of CIS solar cells using device simulation
Minemoto, Takashi, Matsui, Takuya, Takakura, Hideyuki, Hamakawa, Yoshihiro, Negami, Takayuki, Hashimoto, Yasuhiro, Uenoyama, Takeshi, Kitagawa, Masatoshi
Published in Solar energy materials and solar cells (01.03.2001)
Published in Solar energy materials and solar cells (01.03.2001)
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Journal Article
Conference Proceeding
Biaxial strain effect on wurtzite GaN/AlGaN quantum well lasers
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Conference Proceeding
Journal Article
Optical gain using three-band model taking into account the excitonic effects
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Conference Proceeding
Journal Article
ELECTRON EMISSION FROM GRADED AlxGa1-xN/GaN NEGATIVE-ELECTRON-AFFINITY COLD CATHODES
Deguchi, M, Uenoyama, T
Published in Jpn.J.Appl.Phys ,Part 2. Vol. 39, no. 7A, pp. L641-L643. 2000 (01.01.2000)
Published in Jpn.J.Appl.Phys ,Part 2. Vol. 39, no. 7A, pp. L641-L643. 2000 (01.01.2000)
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Journal Article
Adsorption and dissociation mechanism of excited N2 on ZnSe surface
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Conference Proceeding
Effect of Crystal Symmetry on Electronic Structures of CuInSe 2 and Related Compounds
Masakatsu Suzuki, Masakatsu Suzuki, Takeshi Uenoyama, Takeshi Uenoyama, Takahiro Wada, Takahiro Wada, Takeshi Hanada, Takeshi Hanada, Yoshio Nakamura, Yoshio Nakamura
Published in Japanese Journal of Applied Physics (01.09.1997)
Published in Japanese Journal of Applied Physics (01.09.1997)
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Journal Article
Adsorption and Dissociation Mechanism of Excited N 2 on ZnSe Surface
Taketoshi Nakao, Taketoshi Nakao, Takeshi Uenoyama, Takeshi Uenoyama
Published in Japanese Journal of Applied Physics (01.01.1993)
Published in Japanese Journal of Applied Physics (01.01.1993)
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Journal Article
Optical gain calculation of wurtzite GaN/AlGaN quantum well laser
KAMIYAMA, S, OHNAKA, K, SUZUKI, M, UENOYAMA, T
Published in Japanese Journal of Applied Physics (1995)
Published in Japanese Journal of Applied Physics (1995)
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Journal Article
Effect of crystal symmetry on electronic structures of CuInSe2 and related compounds
SUZUKI, M, UENOYAMA, T, WADA, T, HANADA, T, NAKAMURA, Y
Published in Japanese journal of applied physics (15.09.1997)
Published in Japanese journal of applied physics (15.09.1997)
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Journal Article
Strain effect on 630 nm GaInP/AlGaInP multi-quantum well lasers
KAMIYAMA, S, UENOYAMA, T, MANNOH, M, OHNAKA, K
Published in Japanese Journal of Applied Physics (1994)
Published in Japanese Journal of Applied Physics (1994)
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Journal Article
Display device and method of manufacturing same
Fujiwara, Yasufumi, Uenoyama, Takeshi, Ichikawa, Shuhei, Tatebayashi, Jun
Year of Publication 20.08.2024
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Year of Publication 20.08.2024
Patent
DISPLAY DEVICE AND METHOD OF MANUFACTURING SAME
FUJIWARA, Yasufumi, ICHIKAWA, Shuhei, TATEBAYASHI, Jun, UENOYAMA, Takeshi
Year of Publication 23.09.2021
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Year of Publication 23.09.2021
Patent
Theoretical optical gain in InGaN quantum wells
Uenoyama, Takeshi, Suzuki, Masakazu
Published in Materials science & engineering. B, Solid-state materials for advanced technology (06.05.1999)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (06.05.1999)
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