Shape Transformation of 4H-SiC Microtrenches by Hydrogen Annealing
Takatsuka, Akio, Tanaka, Yasunori, Yano, Koji, Yatsuo, Tsutomu, Ishida, Yuuki, Arai, Kazuo
Published in Japanese Journal of Applied Physics (01.04.2009)
Published in Japanese Journal of Applied Physics (01.04.2009)
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Journal Article
Large-size (1.7 × 1.7 mm2) β-Ga2O3 field-plated trench MOS-type Schottky barrier diodes with 1.2 kV breakdown voltage and 109 high on/off current ratio
Otsuka, Fumio, Miyamoto, Hironobu, Takatsuka, Akio, Kunori, Shinji, Sasaki, Kohei, Kuramata, Akito
Published in Applied physics express (01.01.2022)
Published in Applied physics express (01.01.2022)
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Journal Article
Evaluation of Refilled Channel Regions in 4H-SiC Buried Gate Static Induction Transistors
Takatsuka, Akio, Tanaka, Yasunori, Yano, Koji, Yatsuo, Tsutomu, Arai, Kazuo
Published in Japanese Journal of Applied Physics (01.03.2010)
Published in Japanese Journal of Applied Physics (01.03.2010)
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Journal Article
Fabrication of Ampere-Class p-Cu2O/ n-\beta-Ga2O3 Trench Heterojunction Barrier Schottky Diodes and Double-Pulse Evaluation
Takatsuka, Akio, Miyamoto, Hironobu, Sasaki, Kohei, Kuramata, Akito
Published in 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (28.05.2023)
Published in 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (28.05.2023)
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Conference Proceeding
Large-size (1.7 × 1.7 mm 2 ) β-Ga 2 O 3 field-plated trench MOS-type Schottky barrier diodes with 1.2 kV breakdown voltage and 10 9 high on/off current ratio
Otsuka, Fumio, Miyamoto, Hironobu, Takatsuka, Akio, Kunori, Shinji, Sasaki, Kohei, Kuramata, Akito
Published in Applied physics express (01.01.2022)
Published in Applied physics express (01.01.2022)
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Journal Article