Enhanced electron field emission from micropatterned pyramidal diamond tips incorporating CH4/H2/N2 plasma-deposited nanodiamond
Subramanian, K, Kang, W R, Davidson, J L, Takalkar, R S, Choi, B K, Howell, M, Kerns, D V
Published in Diamond and related materials (01.04.2006)
Published in Diamond and related materials (01.04.2006)
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Journal Article
Micropatterned diamond edge emitters of high aspect ratio
TAKALKAR, R. S, DAVIDSON, J. L, KANG, W. P, WISITSORA-AT, A
Published in Diamond and related materials (01.03.2005)
Published in Diamond and related materials (01.03.2005)
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Conference Proceeding
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Diamond vacuum field emission devices
Kang, W.P., Davidson, J.L., Wisitsora-at, A., Wong, Y.M., Takalkar, R., Holmes, K., Kerns, D.V.
Published in Diamond and related materials (01.11.2004)
Published in Diamond and related materials (01.11.2004)
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Conference Proceeding
Field emission characteristics of diamond edge-shaped emitters fabricated using nitrogen–methane plasma
Takalkar, R.S., Kang, W.P., Davidson, J.L., Choi, B.K., Hofmeister, W.H., Subramanian, K.
Published in Diamond and related materials (01.02.2006)
Published in Diamond and related materials (01.02.2006)
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Conference Proceeding
Diamond and carbon-derived vacuum micro- and nano-electronic devices
KANG, W. P, DAVIDSON, J. L, WISITSORA-AT, A, WONG, Y. M, TAKALKAR, R, SUBRAMANIA, K, KERNS, D. V, HOFMEISTER, W. H
Published in Diamond and related materials (01.03.2005)
Published in Diamond and related materials (01.03.2005)
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Characterization of novel TiN/HfO2 metal insulator semiconductor stack for 32nm eDRAM
Goyal, P, Gupta, S, Krishnan, R, Davies, W, Ho, H, Tessier, A, Arya, A, Deshpande, S, Fang, S, Lee, S, Li, Z, Liu, J, Takalkar, R, Dadson, J, Chakravarti, A, Domenicucci, A, Shepard, J, McStay, K, Morgenfeld, B, Allen, S, Li, X, Khan, B, Knarr, R, Arndt, R, Venigalla, R, Parries, P, Chudzik, M, Stiffler, S
Published in 2010 IEEE International SOI Conference (SOI) (01.10.2010)
Published in 2010 IEEE International SOI Conference (SOI) (01.10.2010)
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Conference Proceeding
On implementation of embedded phosphorus-doped SiC stressors in SOI nMOSFETs
Zhibin Ren, Pei, G., Li, J., Yang, B.F., Takalkar, R., Chan, K., Xia, G., Zhu, Z., Madan, A., Pinto, T., Adam, T., Miller, J., Dube, A., Black, L., Weijtmans, J.W., Yang, B., Harley, E., Chakravarti, A., Kanarsky, T., Pal, R., Lauer, I., Park, D.-G., Sadana, D.
Published in 2008 Symposium on VLSI Technology (01.06.2008)
Published in 2008 Symposium on VLSI Technology (01.06.2008)
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Conference Proceeding
(Invited) Epitaxial Growth of Si:C Alloys: Process Development and Challenges
Dube, Abhishek, Chakravarti, A., Takalkar, R., Li, J., Yang, F., Madan, A., Zhu, Z., Loesing, R., Murphy, R., Adam, T. N., Black, L. R., Holt, J. R., Harley, E. C., Stoker, M. W., Schepis, D. J., Chen, X.
Published in ECS transactions (01.01.2010)
Published in ECS transactions (01.01.2010)
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Journal Article
Recent Progress and Challenges in Enabling Embedded Si:C Technology
Yang, B F., Ren, Zhibin, Takalkar, Rohit, Black, Linda R., Dube, Abhishek, Weijtmans, J. W., Li, John, Chan, K, Souza, J P de, Madan, Anita, Xia, G., Zhu, Zhengmao, Faltermeier, J., Reznicek, A., Adam, Thomas N., Chakravarti, Ashima, Pei, G, Pal, Rohit, Yang, B, Harley, Eric C., Greene, B, Gehring, A, Cai, M, Sadana, D, Park, D, Mocuta, D, Schepis, Dominic J., Maciejewski, E, Luning, S, Leobandung, E
Published in ECS transactions (2009)
Published in ECS transactions (2009)
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Effect of Ion Implantation and Anneals on Fully-strained SiC and SiC:P Films using Multiple Characterization Techniques
Madan, Anita, Li, Jinghong, Ren, Zhibin, Yang, B F., Harley, Eric C., Adam, Thomas N., Loesing, Rainer, Zhu, Zhengmao, Pinto, Teresa, Chakravarti, Ashima, Dube, Abhishek, Takalkar, Rohit, Weijtmans, J. W., Black, Linda R., Schepis, Dominic J.
Published in ECS transactions (2009)
Published in ECS transactions (2009)
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Journal Article
Enhanced electron field emission from micropattemed pyramidal diamond tips incorporating CH4/H2/N2 plasma-deposited nanodiamond
SUBRAMANIAN, K, KANG, W. P, DAVIDSON, J. L, TAKALKAR, R. S, CHOI, B. K, HOWELL, M, KERNS, D. V
Published in Diamond and related materials (2006)
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Published in Diamond and related materials (2006)
Conference Proceeding
Scaling deep trench based eDRAM on SOI to 32nm and Beyond
Wang, G., Anand, D., Butt, N., Cestero, A., Chudzik, M., Ervin, J., Fang, S., Freeman, G., Ho, H., Khan, B., Kim, B., Kong, W., Krishnan, R., Krishnan, S., Kwon, O., Liu, J., McStay, K., Nelson, E., Nummy, K., Parries, P., Sim, J., Takalkar, R., Tessier, A., Todi, R.M., Malik, R., Stiffler, S., Iyer, S.S.
Published in 2009 IEEE International Electron Devices Meeting (IEDM) (01.12.2009)
Published in 2009 IEEE International Electron Devices Meeting (IEDM) (01.12.2009)
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Conference Proceeding
High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor
Yang, B. Frank, Takalkar, R., Ren, Z., Black, L., Dube, A., Weijtmans, J.W., Li, J., Johnson, J.B., Faltermeier, J., Madan, A., Zhu, Z., Turansky, A., Xia, G., Chakravarti, A., Pal, R., Chan, K., Reznicek, A., Adam, T.N., Yang, B., de Souza, J.P., Harley, E.C.T., Greene, B., Gehring, A., Cai, M., Aime, D., Sun, S., Meer, H., Holt, J., Theodore, D., Zollner, S., Grudowski, P., Sadana, D., Park, D.-G., Mocuta, D., Schepis, D., Maciejewski, E., Luning, S., Pellerin, J., Leobandung, E.
Published in 2008 IEEE International Electron Devices Meeting (01.12.2008)
Published in 2008 IEEE International Electron Devices Meeting (01.12.2008)
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Conference Proceeding
A 0.039um2 high performance eDRAM cell based on 32nm High-K/Metal SOI technology
Butt, N, Mcstay, K, Cestero, A, Ho, H, Kong, W, Fang, S, Krishnan, R, Khan, B, Tessier, A, Davies, W, Lee, S, Zhang, Y, Johnson, J, Rombawa, S, Takalkar, R, Blauberg, A, Hawkins, K V, Liu, J, Rosenblatt, S, Goyal, P, Gupta, S, Ervin, J, Li, Z, Galis, S, Barth, J, Yin, M, Weaver, T, Li, J H, Narasimha, S, Parries, P, Henson, W K, Robson, N, Kirihata, T, Chudzik, M, Maciejewski, E, Agnello, P, Stiffler, S, Iyer, S S
Published in 2010 International Electron Devices Meeting (01.12.2010)
Published in 2010 International Electron Devices Meeting (01.12.2010)
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