Growth of InN films by radical-enhanced metal organic chemical vapor deposition at a low temperature of 200 °C
Takai, Shinnosuke, Lu, Yi, Oda, Osamu, Takeda, Keigo, Kondo, Hiroki, Ishikawa, Kenji, Sekine, Makoto, Hori, Masaru
Published in Japanese Journal of Applied Physics (01.06.2017)
Published in Japanese Journal of Applied Physics (01.06.2017)
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