Growth of 4H silicon carbide crystals on a (112) seed
Fadeev, A. Yu, Lebedev, A. O., Tairov, Yu. M.
Published in Semiconductors (Woodbury, N.Y.) (01.10.2012)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2012)
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Light conversion in thin films of mixtures of mesotetraphenylporphyrin and yttrium vanadate crystallites doped with erbium. I. Photovoltaic properties and structure
Nagovitsyn, I. A., Chudinova, G. K., Zubov, A. I., Zavedeev, E. V., Tairov, Yu. M., Moshnikov, V. A., Kononova, I. E., Kurilkin, V. V.
Published in Russian journal of physical chemistry. B (01.07.2016)
Published in Russian journal of physical chemistry. B (01.07.2016)
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Journal Article
Polytype inclusions and polytype stability in silicon-carbide crystals
Avrov, D. D., Lebedev, A. O., Tairov, Yu. M.
Published in Semiconductors (Woodbury, N.Y.) (01.04.2016)
Published in Semiconductors (Woodbury, N.Y.) (01.04.2016)
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Journal Article
Oxidation model of polycrystalline lead-chalcogenide layers in an iodine-containing medium
Maraeva, E. V., Moshnikov, V. A., Petrov, A. A., Tairov, Yu. M.
Published in Semiconductors (Woodbury, N.Y.) (01.06.2016)
Published in Semiconductors (Woodbury, N.Y.) (01.06.2016)
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Journal Article
Defect formation in 4H-SiC single crystal grown on the prismatic seeds
Fadeev, A Yu, Lebedev, A O, Tairov, Yu M
Published in Journal of physics. Conference series (01.01.2014)
Published in Journal of physics. Conference series (01.01.2014)
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Journal Article
Defect structure of 4H silicon carbide ingots
Lebedev, A.O., Avrov, D.D., Bulatov, A.V., Dorozhkin, S.I., Tairov, Yu.M., Fadeev, A.Yu
Published in Journal of crystal growth (01.03.2011)
Published in Journal of crystal growth (01.03.2011)
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Journal Article
The contact of metal with silicon carbide: Schottky barrier height in relation to SiC polytype
Davydov, S. Yu, Lebedev, A. A., Posrednik, O. V., Tairov, Yu. M.
Published in Semiconductors (Woodbury, N.Y.) (01.12.2001)
Published in Semiconductors (Woodbury, N.Y.) (01.12.2001)
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Journal Article
Mechanisms of defect formation in ingots of 4H silicon carbide polytype
Avrov, D. D., Bulatov, A. V., Dorozhkin, S. I., Lebedev, A. O., Tairov, Yu. M., Fadeev, A. Yu
Published in Semiconductors (Woodbury, N.Y.) (01.03.2011)
Published in Semiconductors (Woodbury, N.Y.) (01.03.2011)
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Journal Article
Role of silicon vacancies in formation of Schottky barriers at Ag and Au contacts to 3C-and 6H-SiC
Davydov, S. Yu, Lebedev, A. A., Posrednik, O. V., Tairov, Yu. M.
Published in Semiconductors (Woodbury, N.Y.) (01.06.2002)
Published in Semiconductors (Woodbury, N.Y.) (01.06.2002)
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Journal Article
Domain formation during syntaxy of polytypes of silicon carbide
Avrov, D. D., Dorozhkin, S. I., Lebedev, A. O., Tairov, Yu. M.
Published in Semiconductors (Woodbury, N.Y.) (01.12.2007)
Published in Semiconductors (Woodbury, N.Y.) (01.12.2007)
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Journal Article
Optical resolution of phosphorus containing calix[4]arenes by additive RP HPLC method
Kalchenko, OI, Tairov, MO, Vysotsky, MO, Lipkowski, J, Kalchenko
Published in Enantiomer (01.01.2000)
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Published in Enantiomer (01.01.2000)
Journal Article
Inclusions of carbon in ingots of silicon carbide grown by the modified Lely method
Avrov, D. D., Dorozhkin, S. I., Tairov, Yu. M., Fadeev, A. Yu, Lebedev, A. O.
Published in Semiconductors (Woodbury, N.Y.) (01.12.2008)
Published in Semiconductors (Woodbury, N.Y.) (01.12.2008)
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Journal Article
Growth of 4H-polytype silicon carbide ingots on (100) seeds
Avrov, D. D., Bulatov, A. V., Dorozhkin, S. I., Lebedev, A. O., Tairov, Yu. M.
Published in Semiconductors (Woodbury, N.Y.) (01.12.2008)
Published in Semiconductors (Woodbury, N.Y.) (01.12.2008)
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Journal Article
Defect formation in silicon carbide large-scale ingots grown by sublimation technique
Avrov, D.D., Bulatov, A.V., Dorozhkin, S.I., Lebedev, A.O., Tairov, Yu.M.
Published in Journal of crystal growth (15.02.2005)
Published in Journal of crystal growth (15.02.2005)
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Journal Article
Topologically Chiral Calix[4]arene Phosphorus Acids
Tairov, M. A., Kalchenko, O. I., Pirozhenko, V. V., Kalchenko, V. I.
Published in Phosphorus, sulfur, and silicon and the related elements (01.08.2002)
Published in Phosphorus, sulfur, and silicon and the related elements (01.08.2002)
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Journal Article
Equilibrium of native point defects in tin dioxide
Bogdanov, K. P., Dimitrov, D. Ts, Lutskaya, O. F., Tairov, Yu. M.
Published in Semiconductors (Woodbury, N.Y.) (01.10.1998)
Published in Semiconductors (Woodbury, N.Y.) (01.10.1998)
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Journal Article
Mobility of charge carriers in double-layer PbTe/PbS structures
Aleksandrova, O. A., Bondokov, R. Ts, Saunin, I. V., Tairov, Yu. M.
Published in Semiconductors (Woodbury, N.Y.) (01.09.1998)
Published in Semiconductors (Woodbury, N.Y.) (01.09.1998)
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