A 7MB/s 64Gb 3-bit/cell DDR NAND flash memory in 20nm-node technology
Ki-Tae Park, Ohsuk Kwon, Sangyong Yoon, Myung-Hoon Choi, In-Mo Kim, Bo-Geun Kim, Min-Seok Kim, Yoon-Hee Choi, Seung-Hwan Shin, Youngson Song, Joo-Yong Park, Jae-Eun Lee, Chang-Gyu Eun, Ho-Chul Lee, Hyeong-Jun Kim, Jun-Hee Lee, Jong-Young Kim, Tae-Min Kweon, Hyun-Jun Yoon, Taehyun Kim, Dong-Kyo Shim, Jongsun Sel, Ji-Yeon Shin, Pansuk Kwak, Jin-Man Han, Keon-Soo Kim, Sungsoo Lee, Young-Ho Lim, Tae-Sung Jung
Published in 2011 IEEE International Solid-State Circuits Conference (01.02.2011)
Published in 2011 IEEE International Solid-State Circuits Conference (01.02.2011)
Get full text
Conference Proceeding