Simultaneous determination of the lattice thermal conductivity and grain/grain thermal resistance in polycrystalline diamond
Anaya, J., Bai, T., Wang, Y., Li, C., Goorsky, M., Bougher, T.L., Yates, L., Cheng, Z., Graham, S., Hobart, K.D., Feygelson, T.I., Tadjer, M.J., Anderson, T.J., Pate, B.B., Kuball, M.
Published in Acta materialia (15.10.2017)
Published in Acta materialia (15.10.2017)
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Journal Article
Activation of Mg implanted in GaN by multicycle rapid thermal annealing
Anderson, T.J, Feigelson, B.N, Kub, F.J, Tadjer, M.J, Hobart, K.D, Mastro, M.A, Hite, J.K, Eddy, C.R
Published in Electronics letters (30.01.2014)
Published in Electronics letters (30.01.2014)
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Journal Article
Homoepitaxial HVPE GaN: A potential substrate for high performance devices
Freitas, J.A., Culbertson, J.C., Mahadik, N.A., Tadjer, M.J., Wu, S., Raghothamachar, B., Dudley, M., Sochacki, T., Bockowski, M.
Published in Journal of crystal growth (15.10.2018)
Published in Journal of crystal growth (15.10.2018)
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Journal Article
An AlN/Ultrathin AlGaN/GaN HEMT Structure for Enhancement-Mode Operation Using Selective Etching
Anderson, T.J., Tadjer, M.J., Mastro, M.A., Hite, J.K., Hobart, K.D., Eddy, C.R., Kub, F.J.
Published in IEEE electron device letters (01.12.2009)
Published in IEEE electron device letters (01.12.2009)
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Journal Article
Characterization of Recessed-Gate AlGaN/GaN HEMTs as a Function of Etch Depth
Anderson, T.J., Tadjer, M.J., Mastro, M.A., Hite, J.K., Hobart, K.D., Eddy, C.R., Kub, F.J.
Published in Journal of electronic materials (01.05.2010)
Published in Journal of electronic materials (01.05.2010)
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Journal Article
Mitigation of BPD by Pre-Epigrowth High Temperature Substrate Annealing
Mahadik, Nadeemullah A., Tadjer, M.J., Stahlbush, Robert E., Ruland, G.E., Affouda, C.A., Imhoff, Eugene A.
Published in Materials Science Forum (24.05.2016)
Published in Materials Science Forum (24.05.2016)
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Journal Article
Thick homoepitaxial GaN with low carrier concentration for high blocking voltage
Freitas, J.A., Mastro, M.A., Imhoff, E.A., Tadjer, M.J., Eddy, C.R., Kub, F.J.
Published in Journal of crystal growth (01.09.2010)
Published in Journal of crystal growth (01.09.2010)
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Journal Article
Improved GaN-based HEMT performance by nanocrystalline diamond capping
Anderson, T.J., Pate, B.B., Binari, S.C., Eddy, C.R., Hobart, K.D., Tadjer, M.J., Feygelson, T.I., Imhoff, E.A., Meyer, D.J., Katzer, D.S., Hite, J.K., Kub, F.J.
Published in 70th Device Research Conference (01.06.2012)
Published in 70th Device Research Conference (01.06.2012)
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Conference Proceeding
Thermally stimulated current separation of hole and acceptor trap density in 4H-SiC epitaxial MOS devices using gamma irradiation
Tadjer, M.J., Hobart, K.D., Stahlbush, R.E., McMarr, P.J., Hughes, H.L., Imhoff, E.A., Kub, F.J., Haney, S.K.
Published in 2009 IEEE Nuclear Science Symposium Conference Record (NSS/MIC) (01.10.2009)
Published in 2009 IEEE Nuclear Science Symposium Conference Record (NSS/MIC) (01.10.2009)
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Conference Proceeding
Enhancement mode AlN/ultrathin AlGaN/GaN HEMTs using selective wet etching
Anderson, T.J., Tadjer, M.J., Mastro, M.A., Hite, J.K., Hobart, K.D., Eddy, C.R., Kub, F.J.
Published in 2009 International Semiconductor Device Research Symposium (01.12.2009)
Published in 2009 International Semiconductor Device Research Symposium (01.12.2009)
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Conference Proceeding
Investigation of nanocrystalline diamond films as UV transparent Ohmic contacts to GaN
Tadjer, M.J., Hobart, K.D., Caldwell, J.D., Mastro, M.A., Feygelson, T.I., Butler, J.E., Alexson, D.A., Kub, F.J.
Published in 2007 International Semiconductor Device Research Symposium (01.12.2007)
Published in 2007 International Semiconductor Device Research Symposium (01.12.2007)
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Conference Proceeding
Influence of Shockley stacking fault propagation and contraction on electrical behavior of 4H-SiC pin diodes and DMOSFETs
Caldwell, J.D., Stahlbush, R.E., Glembocki, O.J., Hobart, K.D., Imhoff, E.A., Tadjer, M.J., Liu, K.X.
Published in 2007 International Semiconductor Device Research Symposium (01.12.2007)
Published in 2007 International Semiconductor Device Research Symposium (01.12.2007)
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Conference Proceeding