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Published in Japanese Journal of Applied Physics (01.05.1999)
Published in Japanese Journal of Applied Physics (01.05.1999)
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EPITAXIAL GROWTH METHOD FOR SILICON CARBIDE
ITO WATARU, TACHIKAWA AKIYOSHI, HOSHINO TAIZO, SHIMIZU MASAYOSHI, AISATO TAKASHI
Year of Publication 06.04.2017
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Year of Publication 23.03.2017
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SUBSTRATE HOLDER OF THERMOCHEMICAL VAPOR DEPOSITION DEVICE
ITO WATARU, TACHIKAWA AKIYOSHI, HOSHINO TAIZO, SHIMIZU MASAYOSHI, FUJIMOTO TATSUO, AISATO TAKASHI
Year of Publication 25.10.2018
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Year of Publication 25.10.2018
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METHOD FOR EPITAXIALLY GROWING SILICON CARBIDE
ITO WATARU, TACHIKAWA AKIYOSHI, HOSHINO TAIZO, SHIMIZU MASAYOSHI, FUJIMOTO TATSUO, AISATO TAKASHI
Year of Publication 18.10.2018
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Year of Publication 18.10.2018
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Measurement of carrier concentration at the GaAs-Si interface in GaAs on Si by Raman scattering
FUTAGI, T, TACHIKAWA, A, JONO, A, MORIKAWA, Y, AIGO, T, MORITANI, A
Published in Japanese Journal of Applied Physics (01.12.1996)
Published in Japanese Journal of Applied Physics (01.12.1996)
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Improvement of threshold voltage uniformity in ion-implanted GaAs-metal-semiconductor field-effect transistors on Si
MORITANI, A, TACHIKAWA, A, JONO, A, AIGO, T, IKEMATSU, Y, SANO, Y, YAMAGISHI, C, AKIYAMA, M
Published in Japanese Journal of Applied Physics (01.11.1996)
Published in Japanese Journal of Applied Physics (01.11.1996)
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SUBSTRATE PROCESSING APPARATUS
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Year of Publication 29.01.2015
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Year of Publication 29.01.2015
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