Integration of Low Temperature SiGe:B Raised Sources and Drains in p-Type FDSOI Field Effect Transistors
Lu, Cao-Minh Vincent, Fenouillet-Beranger, Claire, Hartmann, Jean-Michel, Rodriguez, Philippe, Benevent, Véronique, Samson, Marie-Pierre, Previtali, Bernard, Tabone, Claude, Cassé, Mikael, Allain, Fabienne, Romano, Giovanni, Brunet, Laurent, Batude, Perrine, Skotnicki, Thomas, Vinet, Maud
Published in ECS transactions (18.08.2016)
Published in ECS transactions (18.08.2016)
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Experimental Evidence of Sidewall Enhanced Transport Properties of Mesa-Isolated (001) Germanium-On-Insulator pMOSFETs
Pouydebasque, A., Romanjek, K., Le Royer, C., Tabone, C., Previtali, B., Allain, F., Augendre, E., Hartmann, J.-M., Grampeix, H., Vinet, M.
Published in IEEE transactions on electron devices (01.12.2009)
Published in IEEE transactions on electron devices (01.12.2009)
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Enabling 3D Monolithic Integration
Batude, Perrine, Vinet, Maud, Pouydebasque, Arnaud, Clavelier, Laurent, LeRoyer, Cyrille, Tabone, Claude, Previtali, Bernard, Sanchez, Loic, Baud, Laurence, Roman, Antonio, Carron, Véronique, Nemouchi, Fabrice, Pocas, Stéphane, Comboroure, Corine, Mazzocchi, Vincent, Grampeix, Helen, Aussenac, François, Deleonibus, Simon
Published in ECS transactions (03.10.2008)
Published in ECS transactions (03.10.2008)
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Review of Some Critical Aspects of Ge and GeOI Substrates
Clavelier, Laurent, Le Royer, Cyrille, Morand, Yves, Deguet, Chrystel, Vincent, B., Damlencourt, Jean-François, Hartmann, Jean-Michel, Kermarrec, O., Signamarcheix, T., Depuydt, B., Theuwis, Antoon, Quaeyhaegens, C., Cherkashin, N., Rivallin, P., Tabone, Claude, Lagrasta, S., Campidelli, Y., Descombes, S., Sanchez, L., Akastu, T., Rigny, A., Bensahel, D., Billon, Thierry, Kernevez, Nelly, Deleonibus, Simon
Published in ECS transactions (20.10.2006)
Published in ECS transactions (20.10.2006)
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GeOI pMOSFETs Scaled Down to 30-nm Gate Length With Record Off-State Current
Hutin, L., Le Royer, C., Damlencourt, J.-F., Hartmann, J.-M., Grampeix, H., Mazzocchi, V., Tabone, C., Previtali, B., Pouydebasque, A., Vinet, M., Faynot, O.
Published in IEEE electron device letters (01.03.2010)
Published in IEEE electron device letters (01.03.2010)
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Experimental Investigation of the Tunneling Injection Boosters for Enhanced I ETSOI Tunnel FET
Villalon, Anthony, Le Royer, Cyrille, Casse, Mikael, Cooper, David, Hartmann, Jean-Michel, Allain, Fabienne, Tabone, Claude, Andrieu, Francois, Cristoloveanu, Sorin
Published in IEEE transactions on electron devices (01.12.2013)
Published in IEEE transactions on electron devices (01.12.2013)
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1024 3D-Stacked Monolithic NEMS Array with 375μm20.5mW 0.28ppm Frequency Deviation Pixel-level Readout for Zeptogram Gravimetric Sensing
Billiot, Gerard, Mattei, Paul, Vysotskyi, Bogdan, Reynaud, Adrien, Hutin, Louis, Plantier, Christophe, Rolland, Emmanuel, Gely, Marc, Usai, Giulia, Tabone, Claude, Pillonnet, Gael, Robinet, Stephanie, Hentz, Sebastien
Published in 2022 IEEE International Solid- State Circuits Conference (ISSCC) (20.02.2022)
Published in 2022 IEEE International Solid- State Circuits Conference (ISSCC) (20.02.2022)
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Conference Proceeding
Detecting Unintended Schottky Junctions and Their Impact on Tunnel FET Characteristics
Hutin, Louis, Le Royer, Cyrille, Oeflein, Robert Pierce, Martinie, Sebastien, Borrel, Julien, Delaye, Vincent, Hartmann, Jean-Michel, Tabone, Claude, Vinet, Maud
Published in IEEE transactions on electron devices (01.06.2016)
Published in IEEE transactions on electron devices (01.06.2016)
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Journal Article
Experimental Investigation of the Tunneling Injection Boosters for Enhanced ION ETSOI Tunnel FET
VILLALON, Anthony, LE ROYER, Cyrille, CASSE, Mikaël, COOPER, David, HARTMANN, Jean-Michel, ALLAIN, Fabienne, TABONE, Claude, ANDRIEU, François, CRISTOLOVEANU, Sorin
Published in IEEE transactions on electron devices (01.12.2013)
Published in IEEE transactions on electron devices (01.12.2013)
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High-Performance Ultrathin Body c-SiGe Channel FDSOI pMOSFETs Featuring SiGe Source and Drain: Vth Tuning, Variability, Access Resistance, and Mobility Issues
VILLALON, Anthony, LE ROYER, Cyrille, SCHEIBLIN, Pascal, ALLAIN, Fabienne, ANDRIEU, François, WEBER, Olivier, FAYNOT, Olivier, CRISTOLOVEANU, Sorin, CASSE, Mickael, COOPER, David, MAZURIER, Jérome, PREVITALI, Bernard, TABONE, Claude, PERREAU, Pierre, HARTMANN, Jean-Michel
Published in IEEE transactions on electron devices (01.05.2013)
Published in IEEE transactions on electron devices (01.05.2013)
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Journal Article
High-Performance Ultrathin Body c-SiGe Channel FDSOI pMOSFETs Featuring SiGe Source and Drain: V Tuning, Variability, Access Resistance, and Mobility Issues
Villalon, Anthony, Le Royer, Cyrille, Cristoloveanu, Sorin, Cassé, Mickaël, Cooper, David, Mazurier, Jaome, Previtali, Bernard, Tabone, Claude, Perreau, Pierre, Hartmann, Jean-Michel, Scheiblin, Pascal, Allain, Fabienne, Andrieu, Francois, Weber, Olivier, Faynot, Olivier
Published in IEEE transactions on electron devices (01.05.2013)
Published in IEEE transactions on electron devices (01.05.2013)
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Journal Article
Ω-Gate Nanowire P-FET with cSiGe Channel Epitaxied on Strained-SOI Substrates
Nguyen, Phuong, Barraud, Sylvain, Cassé, Mikael, Pelloux-Prayer, Johan, Tabone, Claude, Hartmann, Jean-Michel, Arvet, Christian, Bernier, Nicolas, Hutin, Louis, Ecarnot, Ludovic, Maleville, Christophe, Nguyen, Bich-Yen, Mazure, Carlos, Faynot, Oliver, Vinet, Maud
Published in ECS transactions (18.08.2016)
Published in ECS transactions (18.08.2016)
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Challenges and Progress in Germanium-on-Insulator Materials and Device Development towards ULSI Integration
Augendre, Emmanuel, Sanchez, Loïc, Benaissa, Lamine, Signamarcheix, Thomas, Hartmann, Jean-Michel, Le Royer, Cyrille, Vinet, Maud, Van Den Daele, William, Damlencourt, Jean-François, Romanjek, Krunoslav, Pouydebasque, Arnaud, Batude, Perrine, Tabone, Claude, Mazen, Frédéric, Tauzin, Aurélie, Blanc, Nicolas, Pellat, Michel, Dechamp, Jérôme, Zussy, Marc, Scheiblin, Pascal, Jaud, Marie-Anne, Drazek, Charlotte, Maurois, Cécile, Piccin, Matteo, Abbadie, Alexandra, Lallement, Fabrice, Daval, Nicolas, Guiot, Eric, Rigny, Arnaud, Ghyselen, Bruno, Bourdelle, Konstantin, Boulanger, Fabien, Cristoloveanu, Sorin, Billon, Thierry, Faynot, Olivier, Deguet, Chrystel, Clavelier, Laurent
Published in ECS transactions (01.01.2009)
Published in ECS transactions (01.01.2009)
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Journal Article
Schottky Barrier Height Extraction in Ohmic Regime: Contacts on Fully-Processed 200mm GeOI Substrates
Hutin, Louis, Le Royer, Cyrille, Tabone, Claude, Carron, Véronique, Delaye, Vincent, Nemouchi, Fabrice, Aussenac, François, Clavelier, Laurent, Deleonibus, Simon
Published in ECS transactions (2009)
Published in ECS transactions (2009)
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Development of X-ray Photoelectron Spectroscopy under bias and its application to determine band-energies and dipoles in the HKMG stack
Kumar, Pushpendra, Leroux, Charles, Domengie, Florian, Martinez, Eugenie, Loup, Virginie, Guiheux, Denis, Morand, Yves, Pedini, Jean-Michel, Tabone, Claude, Gaillard, Frederic, Ghibaudo, Gerard
Published in 2018 IEEE International Electron Devices Meeting (IEDM) (01.12.2018)
Published in 2018 IEEE International Electron Devices Meeting (IEDM) (01.12.2018)
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Conference Proceeding
Fully Depleted Silicon-on-Insulator nMOSFETs with Tensile Strained High Carbon Content Si1-yCy Channels
Ducroquet, Frédérique, Hartmann, Jean-Michel, Tabone, Claude, Lafond, Dominique, Vizioz, Christian, Ernst, Thomas P., Deleonibus, Simon
Published in ECS transactions (20.10.2006)
Published in ECS transactions (20.10.2006)
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Very Large Scale Integration Optomechanics: a cure for loneliness of NEMS resonators?
Hermouet, Maxime, Sansa, Marc, Defoort, Martial, Banniard, Louise, Dominauez-Medina, Sergio, Fostner, Shawn, Palanchoke, Ujwol, Fafin, Alexandre, Gely, Marc, Hutin, Louis, Plantier, Christophe, Rolland, Emmanuel, Tabone, Claude, Usai, Giulia, Ernst, Thomas, Villard, Patrick, Billiot, Gerard, Mattei, Paul, Nonglaton, Guillaume, Fontelaye, Caroline, Barrois, Charlie, Castany, Olivier, Santos, Eduardo Gil, Allain, Pierre E., Vernhes, Emeline, Boulanger, Pascale, Brenac, Ariel, Masselon, Christophe, Favero, Ivan, Alava, Thomas, Jourdan, Guillaume, Hentz, Sebastien
Published in 2018 IEEE International Electron Devices Meeting (IEDM) (01.12.2018)
Published in 2018 IEEE International Electron Devices Meeting (IEDM) (01.12.2018)
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Conference Proceeding
Integration of Low Temperature SiGe:B Raised Sources and Drains in p-Type FDSOI Field Effect Transistors
Lu, Cao-Minh Vincent, Fenouillet-Beranger, Claire, Hartmann, Jean-Michel, Rodriguez, Philippe, Benevent, Véronique, Samson, Marie-Pierre, Previtali, Bernard, Tabone, Claude, Cassé, Mikael, Allain, Fabienne, Romano, Giovanni, Brunet, Laurent, Batude, Perrine, Skotnicki, Thomas, Vinet, Maud
Published in Meeting abstracts (Electrochemical Society) (01.09.2016)
Published in Meeting abstracts (Electrochemical Society) (01.09.2016)
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Journal Article
Ω-Gate Nanowire P-FET with cSiGe Channel Epitaxied on Strained-SOI Substrates
Nguyen, Phuong, Barraud, Sylvain, Cassé, Mikael, Pelloux-Prayer, Johan, Tabone, Claude, Hartmann, Jean-Michel, Arvet, Christian, Bernier, Nicolas, Hutin, Louis, Ecarnot, Ludovic, Maleville, Christophe, Nguyen, Bich-Yen, Mazure, Carlos, Faynot, Oliver, Vinet, Maud
Published in Meeting abstracts (Electrochemical Society) (01.09.2016)
Published in Meeting abstracts (Electrochemical Society) (01.09.2016)
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Journal Article
Schottky Barrier Height Extraction in Ohmic Regime: Contacts on Fully-Processed 200mm GeOI Substrates
Hutin, Louis, Le Royer, Cyrille, Tabone, Claude, Carron, Véronique, Delaye, Vincent, Nemouchi, Fabrice, Aussenac, François, Clavelier, Laurent, Deleonibus, Simon
Published in Meeting abstracts (Electrochemical Society) (29.08.2008)
Published in Meeting abstracts (Electrochemical Society) (29.08.2008)
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