Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration
Hsu, Lung-Hsing, Lai, Yung-Yu, Tu, Po-Tsung, Langpoklakpam, Catherine, Chang, Ya-Ting, Huang, Yu-Wen, Lee, Wen-Chung, Tzou, An-Jye, Cheng, Yuh-Jen, Lin, Chun-Hsiung, Kuo, Hao-Chung, Chang, Edward Yi
Published in Micromachines (Basel) (27.09.2021)
Published in Micromachines (Basel) (27.09.2021)
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Journal Article
The Evolution of Manufacturing Technology for GaN Electronic Devices
Liu, An-Chen, Tu, Po-Tsung, Langpoklakpam, Catherine, Huang, Yu-Wen, Chang, Ya-Ting, Tzou, An-Jye, Hsu, Lung-Hsing, Lin, Chun-Hsiung, Kuo, Hao-Chung, Chang, Edward Yi
Published in Micromachines (Basel) (23.06.2021)
Published in Micromachines (Basel) (23.06.2021)
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Journal Article
Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications
Liu, An-Chen, Tu, Po-Tsung, Chen, Hsin-Chu, Lai, Yung-Yu, Yeh, Po-Chun, Kuo, Hao-Chung
Published in Micromachines (Basel) (01.08.2023)
Published in Micromachines (Basel) (01.08.2023)
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Journal Article
CMOS-compatible GaN HEMT on 200mm Si-substrate for RF application
Yeh, Po-Chun, Tu, Po-Tsung, Liu, Hsueh-Hsing, Hsu, Chien-Hua, Yang, Hsin-Yun, Fu, Yi-Keng, Lee, Li-Heng, Tzeng, Pei-Jer, Wu, Yuh-Renn, Sheu, Shyh-Shyuan, Lo, Wei-Chung, Wu, Chih-I
Published in 2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) (19.04.2021)
Published in 2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) (19.04.2021)
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Conference Proceeding
Modeling of GaN HEMTs on silicon with trapping and self-heating effects for RF applications
Tsou, Chuan-Wei, Tu, Po-Tsung, Tsai, Kan-Hsueh, Yeh, Po-Chun, Lee, Heng-Yuan, Lee, Li-Heng, Hsu, Shawn S. H.
Published in 2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) (01.04.2018)
Published in 2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) (01.04.2018)
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Conference Proceeding
(Invited) Growth and Characterization of High Power AlInN/GaN HEMTs
Chyi, Jen-Inn, Lee, Geng-Yen, Tu, Po-Tsung, Yeh, Nien-Tze
Published in ECS transactions (20.03.2014)
Published in ECS transactions (20.03.2014)
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Journal Article
Effect of Ti buffer layer on HfOx-based bipolar and complementary resistive switching for future memory applications
Rahaman, Sk Ziaur, Yu-De Lin, Pei-Yi Gu, Heng-Yuan Lee, Yu-Sheng Chen, Pan-Shiu Chen, Kan-Hsueh Tsai, Wei-Su Chen, Chien-Hua Hsu, Po-Tsung Tu, Chen, Frederick T., Ming-Jinn Tsai, Tzu-Kun Ku, Pei-Hua Wang
Published in 2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) (01.04.2016)
Published in 2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) (01.04.2016)
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Conference Proceeding
GaN on Si RF performance with different AlGaN back barrier
Hsieh, Chang-Yan, Chen, Hui-Yu, Tu, Po-Tsung, Chen, Jui-Chin, Yang, Hsin-Yun, Yeh, Po-Chun, Hsieh, De, Liu, Hsueh-Hsing, Fu, Yi-Keng, Sheu, Shyh-Shyuan, Kuo, Hao-Chung, Wu, Yuh-Renn, Lo, Wei-Chung, Chang, Shih-Chieh
Published in 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT) (17.04.2023)
Published in 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT) (17.04.2023)
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Conference Proceeding
AlInGaN/GaN HEMTs with Different GaN Cap Layer on Low Resistivity Silicon Substrate
Chen, Hui-Yu, Tu, Po-Tsung, Yeh, Po-Chun, Tzeng, Pei-Jer, Sheu, Shyh-Shyuan, Wu, Chih-I, Sanyal, Indraneel, Chyi, Jen-Inn
Published in 2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) (18.04.2022)
Published in 2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) (18.04.2022)
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Conference Proceeding
Investigating the effect of O2 plasma treatment on the operational characteristics of Schottky-gate AlGaN/GaN HEMT
Liu, An-Chen, Huang, Yu-Wen, Chen, Hsin-Chu, Dong, Yi-Jun, Tu, Po-Tsung, Hsu, Lung-Hsing, Lai, Yung-Yu, Yeh, Po-Chun, Huang, I-Yu, Kuo, Hao-Chung
Published in Semiconductor science and technology (01.08.2024)
Published in Semiconductor science and technology (01.08.2024)
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Journal Article
Investigating the effect of O 2 plasma treatment on the operational characteristics of Schottky-gate AlGaN/GaN HEMT
Liu, An-Chen, Huang, Yu-Wen, Chen, Hsin-Chu, Dong, Yi-Jun, Tu, Po-Tsung, Hsu, Lung-Hsing, Lai, Yung-Yu, Yeh, Po-Chun, Huang, I-Yu, Kuo, Hao-Chung
Published in Semiconductor science and technology (01.08.2024)
Published in Semiconductor science and technology (01.08.2024)
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Journal Article
Investigation of AIGaN/GaN MISHEMTs with Varied AIGaN Barrier Depths via a Low Damage ALE Process
Liu, An-Chen, Chen, Hsin-Chu, Tu, Po-Tsung, Cho, Sung-Jin, Newton, Andrew, Lai, Yung-Yu, Chen, Yan-Lin, Yeh, Po-Chun, Chang, Shu-Tong, Kuo, Hao-Chung
Published in 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA) (22.04.2024)
Published in 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA) (22.04.2024)
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Conference Proceeding
Effects of Channel Thickness on DC/RF Performance of InAlGaN/AlN/GaN HEMTs
Shieh, De, Lee, Zheng-Fong, Lee, Ming-Yuan, Chen, Hui-Yu, Hsieh, Chang-Yan, Tu, Po-Tsung, Yeh, Po-Chun, Sheu, Shyh-Shyuan, Lo, Wei-Chung, Chang, Shih-Chieh, Shen, Chang-Hong, Shieh, Jia-Min, Chyi, Jen-Inn
Published in 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA) (22.04.2024)
Published in 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA) (22.04.2024)
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Conference Proceeding
Effect of O2 plasma surface treatment on gate leakage current in AlGaN/GaN HEMT
Liu, An-Chen, Huang, Yu-Wen, Lin, Chao-Hsu, Dong, Yi-Jun, Lai, Yung-Yu, Ting, Chao-Cheng, Tu, Po-Tsung, Yeh, Po-Chun, Chen, Hsin-Chu, Kuo, Hao-Chung
Published in 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT) (17.04.2023)
Published in 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT) (17.04.2023)
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Conference Proceeding
Quaternary Barrier AlInGaN/GaN-on-Si High Electron Mobility Transistor with Record FT-Lg Product of 13.9 GHz-μm
Tu, Po-Tsung, Sanyal, Indraneel, Yeh, Po-Chun, Lee, Heng-Yuan, Lee, Li-Heng, Wu, Chih-I, Chyi, Jen-Inn
Published in 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) (01.08.2020)
Published in 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) (01.08.2020)
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Conference Proceeding
(Invited) Growth and Characterization of High Power AlInN/GaN HEMTs
Chyi, Jen-Inn, Lee, Geng-Yen, Tu, Po-Tsung, Yeh, Nien-Tze
Published in Meeting abstracts (Electrochemical Society) (01.04.2014)
Published in Meeting abstracts (Electrochemical Society) (01.04.2014)
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Journal Article
TRANSISTOR STRUCTURE AND METHOD FOR FABRICATING THE SAME
YEH, Po-Chun, CHEN, Jui-Chin, CHEN, Hui-Yu, TU, Po-Tsung, HSIEH, Chang-Yan
Year of Publication 02.05.2024
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Year of Publication 02.05.2024
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