Low-carrier density sputtered-MoS2 film by H2S annealing for normally-off accumulation-mode FET
Shimizu, Jun'ichi, Ohashi, Takumi, Matsuura, Kentaro, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Ikarashi, Nobuyuki, Wakabayashi, Hitoshi
Published in 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) (01.02.2017)
Published in 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) (01.02.2017)
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Conference Proceeding
High-mobility and low-carrier-density sputtered MoS2 film formed by introducing residual sulfur during low-temperature in 3%-H2 annealing for three-dimensional ICs
Shimizu, Jun ichi, Ohashi, Takumi, Matsuura, Kentaro, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.04.2017)
Published in Japanese Journal of Applied Physics (01.04.2017)
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Journal Article
Site Control of Metal Droplet Formation on CaF 2 Surface Using a Focused Electron Beam
Kawasaki, Koji, Uejima, Kazuya, Kazuo Tsutsui, Kazuo Tsutsui
Published in Japanese Journal of Applied Physics (01.12.1995)
Published in Japanese Journal of Applied Physics (01.12.1995)
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Journal Article
Multitunneling Junction of Metal Droplets Formed on CaF 2 Step Edges in a Self-Assembling Manner
Koji Kawasaki, Koji Kawasaki, Marie Mochizuki, Marie Mochizuki, Jun Takeshita, Jun Takeshita, Kazuo Tsutsui, Kazuo Tsutsui
Published in Japanese Journal of Applied Physics (01.03.1998)
Published in Japanese Journal of Applied Physics (01.03.1998)
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Journal Article
Fabrication of Fluoride Resonant Tunneling Diodes on V-Grooved Si(100) Substrates
Watanabe, So, Sugisaki, Tsuyoshi, Toriumi, Yohei, Maeda, Motoki, Tsutsui, Kazuo
Published in Japanese Journal of Applied Physics (01.06.2006)
Published in Japanese Journal of Applied Physics (01.06.2006)
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Journal Article
Chemical states of PVD-ZrS2 film underneath scaled high-k film with self-oxidized ZrO2 film as interfacial layer
Otomo, Masaki, Hamada, Masaya, Ono, Ryo, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.04.2023)
Published in Japanese Journal of Applied Physics (01.04.2023)
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Journal Article
Multi-layered MoS2 film formed by high-temperature sputtering for enhancement-mode nMOSFETs
Ohashi, Takumi, Suda, Kohei, Ishihara, Seiya, Sawamoto, Naomi, Yamaguchi, Shimpei, Matsuura, Kentaro, Kakushima, Kuniyuki, Sugii, Nobuyuki, Nishiyama, Akira, Kataoka, Yoshinori, Natori, Kenji, Tsutsui, Kazuo, Iwai, Hiroshi, Ogura, Atsushi, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.04.2015)
Published in Japanese Journal of Applied Physics (01.04.2015)
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Journal Article
ZrS2 symmetrical-ambipolar FETs with near-midgap TiN film for both top-gate electrode and Schottky-barrier contact
Hamada, Masaya, Matsuura, Kentaro, Hamada, Takuya, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.05.2021)
Published in Japanese Journal of Applied Physics (01.05.2021)
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Journal Article
Ohmic contact between titanium and sputtered MoS 2 films achieved by forming-gas annealing
Toyama, Mayato, Ohashi, Takumi, Matsuura, Kentaro, Shimizu, Jun’ichi, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.07.2018)
Published in Japanese Journal of Applied Physics (01.07.2018)
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Journal Article
Ohmic contact between titanium and sputtered MoS^sub 2^ films achieved by forming-gas annealing
Toyama, Mayato, Ohashi, Takumi, Matsuura, Kentaro, Shimizu, Jun'ichi, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.07.2018)
Published in Japanese Journal of Applied Physics (01.07.2018)
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Journal Article
Normally-off sputtered-MoS 2 nMISFETs with TiN top-gate electrode all defined by optical lithography for chip-level integration
Matsuura, Kentaro, Hamada, Masaya, Hamada, Takuya, Tanigawa, Haruki, Sakamoto, Takuro, Hori, Atsushi, Muneta, Iriya, Kawanago, Takamasa, Kakushima, Kuniyuki, Tsutsui, Kazuo, Ogura, Atsushi, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.08.2020)
Published in Japanese Journal of Applied Physics (01.08.2020)
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Journal Article
Enhancement of accuracy of neutron atomic resolution holography
Kanazawa, Yuki, Fukumoto, Youhei, Uechi, Shiyouichi, Ohoyama, Kenji, Lederer, Maximilian, Happo, Naohisa, Hayashi, Koichi, Harada, Masahide, Tsutsui, Kazuo
Published in Acta crystallographica. Section A, Foundations and advances (22.08.2018)
Published in Acta crystallographica. Section A, Foundations and advances (22.08.2018)
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Journal Article
Reduction of conductance mismatch in Fe/Al 2 O 3 /MoS 2 system by tunneling-barrier thickness control
Hayakawa, Naoki, Muneta, Iriya, Ohashi, Takumi, Matsuura, Kentaro, Shimizu, Jun’ichi, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.04.2018)
Published in Japanese Journal of Applied Physics (01.04.2018)
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Journal Article
Reduction of conductance mismatch in Fe/Al^sub 2^O^sub 3^/MoS^sub 2^ system by tunneling-barrier thickness control
Hayakawa, Naoki, Muneta, Iriya, Ohashi, Takumi, Matsuura, Kentaro, Shimizu, Jun'ichi, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.04.2018)
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Published in Japanese Journal of Applied Physics (01.04.2018)
Journal Article
Artificial Control of Dot Sites for Ga Droplet Arrays on CaF 2 Films by Surface Steps and Electron Beam Modifications
Kazuya Uejima, Kazuya Uejima, Jun Takeshita, Jun Takeshita, Koji Kawasaki, Koji Kawasaki, Kazuo Tsutsui, Kazuo Tsutsui
Published in Japanese Journal of Applied Physics (01.06.1997)
Published in Japanese Journal of Applied Physics (01.06.1997)
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Journal Article
High field-effect mobility with suppressed negative threshold voltage shift in 4H-SiC MOSFET with cerium oxide interfacial layer
Song, Jinhan, Ohta, Atsuhiro, Hoshii, Takuya, Wakabayashi, Hitoshi, Tsutsui, Kazuo, Kakushima, Kuniyuki
Published in Japanese Journal of Applied Physics (01.03.2021)
Published in Japanese Journal of Applied Physics (01.03.2021)
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Journal Article
Enhancement-Mode GaN MIS-HEMTs With LaHfOx Gate Insulator for Power Application
Yueh Chin Lin, Yu Xiang Huang, Gung Ning Huang, Chia Hsun Wu, Jing Neng Yao, Chung Ming Chu, Shane Chang, Chia Chieh Hsu, Jin Hwa Lee, Kakushima, Kuniyuki, Tsutsui, Kazuo, Iwai, Hiroshi, Chang, Edward Yi
Published in IEEE electron device letters (01.08.2017)
Published in IEEE electron device letters (01.08.2017)
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Journal Article