Elucidation of PVD MoS2 film formation process and its structure focusing on sub-monolayer region
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Published in Japanese Journal of Applied Physics (01.05.2022)
Published in Japanese Journal of Applied Physics (01.05.2022)
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GaN-based complementary metal–oxide–semiconductor inverter with normally off Pch and Nch MOSFETs fabricated using polarisation-induced holes and electron channels
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Published in Japanese Journal of Applied Physics (01.04.2020)
Published in Japanese Journal of Applied Physics (01.04.2020)
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Enhancement-mode accumulation capacitance–voltage characteristics in TiN/ALD-Al 2 O 3 /sputtered-MoS 2 top-gated stacks
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Published in Japanese Journal of Applied Physics (01.07.2020)
Published in Japanese Journal of Applied Physics (01.07.2020)
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Effect of Deposition Temperature on Chemical Structure of Lanthanum Oxide/Si Interface Structure
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Published in ECS transactions (20.10.2006)
Published in ECS transactions (20.10.2006)
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Control of epitaxial relation of GaAs film on fluoride/Si(111) structure
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Published in JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE (01.12.1992)
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Self-aligned-TiSi 2 bottom contact with APM cleaning and post-annealing for sputtered-MoS 2 film
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Published in Japanese Journal of Applied Physics (01.05.2021)
Published in Japanese Journal of Applied Physics (01.05.2021)
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Importance of crystallinity improvement in MoS 2 film by compound sputtering even followed by post sulfurization
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Published in Japanese Journal of Applied Physics (01.05.2021)
Published in Japanese Journal of Applied Physics (01.05.2021)
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GaN high electron mobility transistors (HEMTs) with self-upward-polarized AlScN gate dielectrics toward enhancement-mode operation
Chen, Si-Meng, Tsai, Sung-Lin, Mizutani, Kazuto, Hoshii, Takuya, Wakabayashi, Hitoshi, Tsutsui, Kazuo, Chang, Edward Yi, Kakushima, Kuniyuki
Published in Japanese Journal of Applied Physics (01.07.2022)
Published in Japanese Journal of Applied Physics (01.07.2022)
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Electrical Characterization of Sputter Deposited AlxSc1-XN Thin Films
Tsai, SungLin, Kusafuka, Kazuki, Hoshii, Takuya, Wakabayashi, Hitoshi, Tsutsui, Kazuo, Kakushima, Kuniyuki
Published in ECS transactions (24.04.2020)
Published in ECS transactions (24.04.2020)
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Elucidation of PVD MoS 2 film formation process and its structure focusing on sub-monolayer region
Ono, Ryo, Imai, Shinya, Kusama, Yuta, Hamada, Takuya, Hamada, Masaya, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Kano, Emi, Ikarashi, Nobuyuki, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.05.2022)
Published in Japanese Journal of Applied Physics (01.05.2022)
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Electrical Characterization of Sputter Deposited Al x Sc 1-X N Thin Films
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Published in ECS transactions (24.04.2020)
Published in ECS transactions (24.04.2020)
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Published in ECS transactions (24.04.2020)
Published in ECS transactions (24.04.2020)
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Published in ECS transactions (24.04.2020)
Published in ECS transactions (24.04.2020)
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Hall-effect mobility enhancement of sputtered MoS 2 film by sulfurization even through Al 2 O 3 passivation film simultaneously preventing oxidation
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Published in Japanese Journal of Applied Physics (01.10.2020)
Published in Japanese Journal of Applied Physics (01.10.2020)
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NiSi 2 as a bottom electrode for enhanced endurance of ferroelectric Y-doped HfO 2 thin films
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Published in Japanese Journal of Applied Physics (01.04.2020)
Published in Japanese Journal of Applied Physics (01.04.2020)
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