Effects of post-deposition annealing in O2 on threshold voltage of Al2O3/AlGaN/GaN MOS heterojunction field-effect transistors
Nakazawa, Satoshi, Shih, Hong-An, Tsurumi, Naohiro, Anda, Yoshiharu, Hatsuda, Tsuguyasu, Ueda, Tetsuzo, Kimoto, Tsunenobu, Hashizume, Tamotsu
Published in Japanese Journal of Applied Physics (01.03.2019)
Published in Japanese Journal of Applied Physics (01.03.2019)
Get full text
Journal Article
200 W Output Power at S-Band in AlGaN/GaN Heterojunction Field Effect Transistors with Field Plates on Si Substrates
Nakazawa, Satoshi, Tsurumi, Naohiro, Nishijima, Masaaki, Anda, Yoshiharu, Ishida, Masahiro, Ueda, Tetsuzo, Tanaka, Tsuyoshi
Published in Japanese Journal of Applied Physics (01.08.2012)
Published in Japanese Journal of Applied Physics (01.08.2012)
Get full text
Journal Article
Effects of Initial Surface Reconstruction on Silicon Interface Control Layer Based Passivation of (001) GaAs Surfaces Studied in an Ultrahigh-Vacuum Multichamber System
Mutoh, Morimichi, Tsurumi, Naohiro, HidekiHasegawa, HidekiHasegawa
Published in Japanese Journal of Applied Physics (1999)
Published in Japanese Journal of Applied Physics (1999)
Get full text
Journal Article
Improved hysteresis in a normally-off AlGaN/GaN MOS heterojunction field-effect transistor with a recessed gate structure formed by selective regrowth
Nakazawa, Satoshi, Shiozaki, Nanako, Negoro, Noboru, Tsurumi, Naohiro, Anda, Yoshiharu, Ishida, Masahiro, Ueda, Tetsuzo
Published in Japanese Journal of Applied Physics (01.09.2017)
Published in Japanese Journal of Applied Physics (01.09.2017)
Get full text
Journal Article
AlN Passivation Over AlGaN/GaN HFETs for Surface Heat Spreading
Tsurumi, Naohiro, Ueno, Hiroaki, Murata, Tomohiro, Ishida, Hidetoshi, Uemoto, Yasuhiro, Ueda, Tetsuzo, Inoue, Kaoru, Tanaka, Tsuyoshi
Published in IEEE transactions on electron devices (01.05.2010)
Published in IEEE transactions on electron devices (01.05.2010)
Get full text
Journal Article
In-Situ Scanning Tunneling Microscope Study of Formation Process of Ultrathin Si Layer by Molecular Beam Epitaxy on GaAs(001)-(2×4) Surface
Tsurumi, Naohiro, Ishikawa, Yasuhiko, Fukui, Takashi, Hasegawa, Hideki
Published in Japanese Journal of Applied Physics (01.03.1998)
Published in Japanese Journal of Applied Physics (01.03.1998)
Get full text
Journal Article
Effects of post-deposition annealing in O 2 on threshold voltage of Al 2 O 3 /AlGaN/GaN MOS heterojunction field-effect transistors
Nakazawa, Satoshi, Shih, Hong-An, Tsurumi, Naohiro, Anda, Yoshiharu, Hatsuda, Tsuguyasu, Ueda, Tetsuzo, Kimoto, Tsunenobu, Hashizume, Tamotsu
Published in Japanese Journal of Applied Physics (01.03.2019)
Published in Japanese Journal of Applied Physics (01.03.2019)
Get full text
Journal Article
SEMICONDUCTOR DEVICE
ANDA, Yoshiharu, WATANABE, Heiji, SHIH, Hong-An, NAKAZAWA, Satoshi, TSURUMI, Naohiro, HOSOI, Takuji, SHIMURA, Takayoshi, YAMADA, Takahiro, NOZAKI, Mikito
Year of Publication 10.01.2019
Get full text
Year of Publication 10.01.2019
Patent
200 W Output Power at S-Band in AlGaN/GaN Heterojunction Field Effect Transistors with Field Plates on Si Substrates
Nakazawa, Satoshi, Tsurumi, Naohiro, Nishijima, Masaaki, Anda, Yoshiharu, Ishida, Masahiro, Ueda, Tetsuzo, Tanaka, Tsuyoshi
Published in Japanese Journal of Applied Physics (01.08.2012)
Published in Japanese Journal of Applied Physics (01.08.2012)
Get full text
Journal Article
SEMICONDUCTOR DEVICE
TSURUMI, NAOHIRO, NAKAZAWA, SATOSHI, UEDA, TETSUZO, ANDA, YOSHIHARU, KAJITANI, RYO
Year of Publication 03.04.2014
Get full text
Year of Publication 03.04.2014
Patent
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
TSURUMI, NAOHIRO, NAKAZAWA, SATOSHI, UEDA, TETSUZO, ANDA, YOSHIHARU, KAJITANI, RYO
Year of Publication 09.02.2012
Get full text
Year of Publication 09.02.2012
Patent
FIELD EFFECT TRANSISTOR
NAKAZAWA, SATOSHI, TSURUMI, NAOHIRO, UEDA, TETSUZO, ANDA, YOSHIHARU, KAJITANI, RYO
Year of Publication 01.12.2011
Get full text
Year of Publication 01.12.2011
Patent