Effect of Channel Dopant Profile on Difference in Threshold Voltage Variability Between NFETs and PFETs
Tsunomura, T, Nishida, A, Hiramoto, T
Published in IEEE transactions on electron devices (01.02.2011)
Published in IEEE transactions on electron devices (01.02.2011)
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Journal Article
Direct Measurement of Correlation Between SRAM Noise Margin and Individual Cell Transistor Variability by Using Device Matrix Array
Hiramoto, T., Suzuki, M., Song, X., Shimizu, K., Saraya, T., Nishida, A., Tsunomura, T., Kamohara, S., Takeuchi, K., Mogami, T.
Published in IEEE transactions on electron devices (01.08.2011)
Published in IEEE transactions on electron devices (01.08.2011)
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Journal Article
Demonstration of transfer learning using 14 nm technology analog ReRAM array
Athena, Fabia Farlin, Fagbohungbe, Omobayode, Gong, Nanbo, Rasch, Malte J., Penaloza, Jimmy, Seo, SoonCheon, Gasasira, Arthur, Solomon, Paul, Bragaglia, Valeria, Consiglio, Steven, Higuchi, Hisashi, Park, Chanro, Brew, Kevin, Jamison, Paul, Catano, Christopher, Saraf, Iqbal, Silvestre, Claire, Liu, Xuefeng, Khan, Babar, Jain, Nikhil, McDermott, Steven, Johnson, Rick, Estrada-Raygoza, I., Li, Juntao, Gokmen, Tayfun, Li, Ning, Pujari, Ruturaj, Carta, Fabio, Miyazoe, Hiroyuki, Frank, Martin M., La Porta, Antonio, Koty, Devi, Yang, Qingyun, Clark, Robert D., Tapily, Kandabara, Wajda, Cory, Mosden, Aelan, Shearer, Jeff, Metz, Andrew, Teehan, Sean, Saulnier, Nicole, Offrein, Bert, Tsunomura, Takaaki, Leusink, Gert, Narayanan, Vijay, Ando, Takashi
Published in Frontiers in electronics (Online) (15.01.2024)
Published in Frontiers in electronics (Online) (15.01.2024)
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Journal Article
Investigation of Threshold Voltage Variability at High Temperature Using Takeuchi Plot
Tsunomura, Takaaki, Nishida, Akio, Hiramoto, Toshiro
Published in Japanese Journal of Applied Physics (01.05.2010)
Published in Japanese Journal of Applied Physics (01.05.2010)
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Journal Article
Impact of Oxide Thickness Fluctuation and Local Gate Depletion on Threshold Voltage Variation in Metal–Oxide–Semiconductor Field-Effect Transistors
Putra, Arifin Tamsir, Tsunomura, Takaaki, Nishida, Akio, Kamohara, Shiro, Takeuchi, Kiyoshi, Hiramoto, Toshiro
Published in Japanese Journal of Applied Physics (01.06.2009)
Published in Japanese Journal of Applied Physics (01.06.2009)
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Journal Article
Effect of channel dopant uniformity on MOSFET threshold voltage variability
Terada, Kazuo, Sanai, Kazuhiko, Tsuji, Katsuhiro, Tsunomura, Takaaki, Nishida, Akio, Mogami, Tohru
Published in Solid-state electronics (01.03.2012)
Published in Solid-state electronics (01.03.2012)
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Journal Article
Possible Origins of Extra Threshold Voltage Variability in N-Type Field-Effect Transistors by Intentionally Changing Process Conditions and Using Takeuchi Plot
Tsunomura, Takaaki, Yano, Fumiko, Nishida, Akio, Hiramoto, Toshiro
Published in Japanese Journal of Applied Physics (01.07.2010)
Published in Japanese Journal of Applied Physics (01.07.2010)
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Journal Article
High-Temperature Properties of Drain Current Variability in Scaled Field-Effect Transistors Analyzed by Decomposition Method
Tsunomura, Takaaki, Kumar, Anil, Mizutani, Tomoko, Nishida, Akio, Takeuchi, Kiyoshi, Inaba, Satoshi, Kamohara, Shiro, Terada, Kazuo, Hiramoto, Toshiro, Mogami, Tohru
Published in Japanese Journal of Applied Physics (01.04.2011)
Published in Japanese Journal of Applied Physics (01.04.2011)
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Journal Article
Measurement of the MOSFET drain current variation under high gate voltage
Terada, Kazuo, Chagawa, Tetsuo, Xiang, Jianyu, Tsuji, Katsuhiro, Tsunomura, Takaaki, Nishida, Akio
Published in Solid-state electronics (01.03.2009)
Published in Solid-state electronics (01.03.2009)
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Journal Article
Origin of Larger Drain Current Variability in N-Type Field-Effect Transistors Analyzed by Variability Decomposition Method
Tsunomura, Takaaki, Kumar, Anil, Mizutani, Tomoko, Nishida, Akio, Takeuchi, Kiyoshi, Inaba, Satoshi, Kamohara, Shiro, Terada, Kazuo, Hiramoto, Toshiro, Mogami, Tohru
Published in Applied physics express (01.11.2010)
Published in Applied physics express (01.11.2010)
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Journal Article
Effect of Channel Dopant Non-uniformity on Transconductance Variability
Terada, Kazuo, Takeda, Ryo, Tsuji, Katsuhiro, Tsunomura, Takaaki, Nishida, Akio, Mogami, Tohru
Published in Japanese Journal of Applied Physics (01.09.2012)
Published in Japanese Journal of Applied Physics (01.09.2012)
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Journal Article
Consideration of Random Dopant Fluctuation Models for Accurate Prediction of Threshold Voltage Variation of Metal–Oxide–Semiconductor Field-Effect Transistors in 45 nm Technology and Beyond
Putra, Arifin Tamsir, Nishida, Akio, Kamohara, Shiro, Tsunomura, Takaaki, Hiramoto, Toshiro
Published in Japanese Journal of Applied Physics (01.04.2009)
Published in Japanese Journal of Applied Physics (01.04.2009)
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Journal Article
Channel Dopant Distribution in Metal--Oxide--Semiconductor Field-Effect Transistors Analyzed by Laser-Assisted Atom Probe Tomography
Takamizawa, Hisashi, Inoue, Koji, Shimizu, Yasuo, Toyama, Takeshi, Yano, Fumiko, Tsunomura, Takaaki, Nishida, Akio, Mogami, Tohru, Nagai, Yasuyoshi
Published in Applied physics express (01.03.2011)
Published in Applied physics express (01.03.2011)
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Journal Article
High-Temperature Properties of Drain Current Variability in Scaled Field-Effect Transistors Analyzed by Decomposition Method
Tsunomura, Takaaki, Kumar, Anil, Mizutani, Tomoko, Nishida, Akio, Takeuchi, Kiyoshi, Inaba, Satoshi, Kamohara, Shiro, Terada, Kazuo, Hiramoto, Toshiro, Mogami, Tohru
Published in Japanese Journal of Applied Physics (01.04.2011)
Published in Japanese Journal of Applied Physics (01.04.2011)
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Journal Article
Threshold voltage variation extracted from MOSFET C-V curves by charge-based capacitance measurement
Tsuji, K., Terada, K., Takeda, R., Tsunomura, T., Nishida, A., Mogami, T.
Published in 2012 IEEE International Conference on Microelectronic Test Structures (01.03.2012)
Published in 2012 IEEE International Conference on Microelectronic Test Structures (01.03.2012)
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Conference Proceeding
Evaluation of MOSFET C-V curve variation using test structure for charge-based capacitance measurement
Tsuji, K., Terada, K., Kikuchi, R., Tsunomura, T., Nishida, A., Mogami, T.
Published in 2011 IEEE ICMTS International Conference on Microelectronic Test Structures (01.04.2011)
Published in 2011 IEEE ICMTS International Conference on Microelectronic Test Structures (01.04.2011)
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Conference Proceeding
Electrical estimation of channel dopant uniformity using test MOSFET array
Terada, K., Sanai, K., Tsuji, K., Tsunomura, T., Nishida, A., Mogami, T.
Published in 2011 IEEE ICMTS International Conference on Microelectronic Test Structures (01.04.2011)
Published in 2011 IEEE ICMTS International Conference on Microelectronic Test Structures (01.04.2011)
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Conference Proceeding
Measurement of MOSFET C-V Curve Variation Using CBCM Method
Tsuji, K., Terada, K., Nakamoto, T., Tsunomura, T., Nishida, A.
Published in 2009 IEEE International Conference on Microelectronic Test Structures (01.03.2009)
Published in 2009 IEEE International Conference on Microelectronic Test Structures (01.03.2009)
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Conference Proceeding