Control of Nitrogen Depth Profile and Chemical Bonding State in Silicon Oxynitride Films Formed by Radical Nitridation
Kawase, Kazumasa, Umeda, Hiroshi, Inoue, Masao, Tsujikawa, Shimpei, Akamatsu, Yasuhiko, Suwa, Tomoyuki, Higuchi, Masaaki, Komura, Masanori, Teramoto, Akinobu, Ohmi, Tadahiro
Published in Japanese Journal of Applied Physics (01.10.2005)
Published in Japanese Journal of Applied Physics (01.10.2005)
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Journal Article
Reliable Assessment of Progressive Breakdown in Ultrathin MOS Gate Oxides Toward Accurate TDDB Evaluation
Tsujikawa, S, Kanno, M, Nagashima, N
Published in IEEE transactions on electron devices (01.05.2011)
Published in IEEE transactions on electron devices (01.05.2011)
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Journal Article
V ox /E ox -Driven Breakdown of Ultrathin SiON Gate Dielectrics in p-Type Metal Oxide Semiconductor Field Effect Transistors under Low-Voltage Inversion Stress
Tsujikawa, Shimpei, Shiga, Katsuya, Umeda, Hiroshi, Yugami, Jiro
Published in Japanese Journal of Applied Physics (01.01.2007)
Published in Japanese Journal of Applied Physics (01.01.2007)
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Journal Article