Study on effective MOSFET channel length extracted from gate capacitance
Tsuji, Katsuhiro, Terada, Kazuo, Fujisaka, Hisato
Published in Japanese Journal of Applied Physics (01.01.2018)
Published in Japanese Journal of Applied Physics (01.01.2018)
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Journal Article
Reconsideration of effective channel length for metal-oxide-semiconductor field-effect transistor
Terada, Kazuo, Sanai, Kazuhiko, Tsuji, Katsuhiro
Published in Japanese Journal of Applied Physics (01.06.2014)
Published in Japanese Journal of Applied Physics (01.06.2014)
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Journal Article
Effect of Channel Dopant Distribution on Effective Channel Length Extraction
Terada, Kazuo, Sanai, Kazuhiko, Matsuoka, Shouhei, Tsuji, Katsuhiro
Published in Japanese Journal of Applied Physics (01.06.2013)
Published in Japanese Journal of Applied Physics (01.06.2013)
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Journal Article
Effect of channel dopant uniformity on MOSFET threshold voltage variability
Terada, Kazuo, Sanai, Kazuhiko, Tsuji, Katsuhiro, Tsunomura, Takaaki, Nishida, Akio, Mogami, Tohru
Published in Solid-state electronics (01.03.2012)
Published in Solid-state electronics (01.03.2012)
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Journal Article
Effect of Channel Dopant Non-uniformity on Transconductance Variability
Terada, Kazuo, Takeda, Ryo, Tsuji, Katsuhiro, Tsunomura, Takaaki, Nishida, Akio, Mogami, Tohru
Published in Japanese Journal of Applied Physics (01.09.2012)
Published in Japanese Journal of Applied Physics (01.09.2012)
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Journal Article
Measurement of the MOSFET drain current variation under high gate voltage
Terada, Kazuo, Chagawa, Tetsuo, Xiang, Jianyu, Tsuji, Katsuhiro, Tsunomura, Takaaki, Nishida, Akio
Published in Solid-state electronics (01.03.2009)
Published in Solid-state electronics (01.03.2009)
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Journal Article
Effect of Channel Dopant Non-uniformity on Transconductance Variability
Terada, Kazuo, Takeda, Ryo, Tsuji, Katsuhiro, Tsunomura, Takaaki, Nishida, Akio, Mogami, Tohru
Published in Japanese Journal of Applied Physics (01.09.2012)
Published in Japanese Journal of Applied Physics (01.09.2012)
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Journal Article
Threshold voltage variation extracted from MOSFET C-V curves by charge-based capacitance measurement
Tsuji, K., Terada, K., Takeda, R., Tsunomura, T., Nishida, A., Mogami, T.
Published in 2012 IEEE International Conference on Microelectronic Test Structures (01.03.2012)
Published in 2012 IEEE International Conference on Microelectronic Test Structures (01.03.2012)
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Conference Proceeding
Evaluation of MOSFET C-V curve variation using test structure for charge-based capacitance measurement
Tsuji, K., Terada, K., Kikuchi, R., Tsunomura, T., Nishida, A., Mogami, T.
Published in 2011 IEEE ICMTS International Conference on Microelectronic Test Structures (01.04.2011)
Published in 2011 IEEE ICMTS International Conference on Microelectronic Test Structures (01.04.2011)
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Conference Proceeding
Electrical estimation of channel dopant uniformity using test MOSFET array
Terada, K., Sanai, K., Tsuji, K., Tsunomura, T., Nishida, A., Mogami, T.
Published in 2011 IEEE ICMTS International Conference on Microelectronic Test Structures (01.04.2011)
Published in 2011 IEEE ICMTS International Conference on Microelectronic Test Structures (01.04.2011)
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Conference Proceeding
Measurement of MOSFET C-V Curve Variation Using CBCM Method
Tsuji, K., Terada, K., Nakamoto, T., Tsunomura, T., Nishida, A.
Published in 2009 IEEE International Conference on Microelectronic Test Structures (01.03.2009)
Published in 2009 IEEE International Conference on Microelectronic Test Structures (01.03.2009)
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Conference Proceeding