Through Recess and Regrowth Gate Technology for Realizing Process Stability of GaN-Based Gate Injection Transistors
Okita, Hideyuki, Hikita, Masahiro, Nishio, Akihiko, Sato, Takahiro, Matsunaga, Keiichi, Matsuo, Hisayoshi, Tsuda, Michinobu, Mannoh, Masaya, Kaneko, Saichiro, Kuroda, Masayuki, Yanagihara, Manabu, Ikoshi, Ayanori, Morita, Tatsuo, Tanaka, Kenichiro, Uemoto, Yasuhiro
Published in IEEE transactions on electron devices (01.03.2017)
Published in IEEE transactions on electron devices (01.03.2017)
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Journal Article
Flat (1120) GaN Thin Film on Precisely Offset-Controlled (1102) Sapphire Substrate
Imura, Masataka, Hoshino, Akira, Nakano, Kiyotaka, Tsuda, Michinobu, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Published in Japanese Journal of Applied Physics (01.10.2005)
Published in Japanese Journal of Applied Physics (01.10.2005)
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Journal Article
Mechanism of H2 pre-annealing on the growth of GaN on sapphire by MOVPE
TSUDA, Michinobu, WATANABE, Kenichi, KAMIYAMA, Satoshi, AMANO, Hiroshi, AKASAKI, Isamu, RONG LIU, BELL, Abigail, PONCE, Fernando A
Published in Applied surface science (01.06.2003)
Published in Applied surface science (01.06.2003)
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Conference Proceeding
Journal Article
X-ray diffraction reciprocal lattice space mapping of a-plane AlGaN on GaN
Tsuda, Michinobu, Furukawa, Hiroko, Honshio, Akira, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Published in Physica Status Solidi (b) (01.06.2006)
Published in Physica Status Solidi (b) (01.06.2006)
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Journal Article
Mechanism of H 2 pre-annealing on the growth of GaN on sapphire by MOVPE
Tsuda, Michinobu, Watanabe, Kenichi, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Liu, Rong, Bell, Abigail, A. Ponce, Fernando
Published in Applied surface science (30.06.2003)
Published in Applied surface science (30.06.2003)
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Journal Article
Impact of H 2 -Preannealing of the Sapphire Substrate on the Crystallinity of Low-Temperature-Deposited AlN Buffer Layer
Tsuda, Michinobu, Balakrishnan, Krishnan, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Published in Japanese Journal of Applied Physics (01.06.2005)
Published in Japanese Journal of Applied Physics (01.06.2005)
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Journal Article
GAS PHASE GROWTH METHOD OF NITRIDE GROUP SEMICONDUCTOR, NITRIDE GROUP SEMICONDUCTOR EXPITAXIAL SUBSTRATE USING THE SAME, SELF-STANDING SUBSTRATE, AND SEMICONDUCTOR DEVICE
TSUDA MICHINOBU, AMANO HIROSHI, KAMIYAMA SATOSHI, AKASAKI ISAMU, IWATANI MOTOAKI
Year of Publication 06.09.2007
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Year of Publication 06.09.2007
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