222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire
Hirayama, Hideki, Fujikawa, Sachie, Noguchi, Norimichi, Norimatsu, Jun, Takano, Takayoshi, Tsubaki, Kenji, Kamata, Norihiko
Published in Physica status solidi. A, Applications and materials science (01.06.2009)
Published in Physica status solidi. A, Applications and materials science (01.06.2009)
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Conference Proceeding
Realization of 256--278 nm AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Si Substrates Using Epitaxial Lateral Overgrowth AlN Templates
Mino, Takuya, Hirayama, Hideki, Takano, Takayoshi, Tsubaki, Kenji, Sugiyama, Masakazu
Published in Applied physics express (01.09.2011)
Published in Applied physics express (01.09.2011)
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High Efficiency Blue Organic Electroluminescent Devices Having a Metal-Doped Electron Injection Layer
Kishigami, Yasuhisa, Tsubaki, Kenji, Kondo, Yukihiro, Kido, Junji
Published in Synthetic metals (21.09.2005)
Published in Synthetic metals (21.09.2005)
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Conference Proceeding
Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency
Takano, Takayoshi, Mino, Takuya, Sakai, Jun, Noguchi, Norimichi, Tsubaki, Kenji, Hirayama, Hideki
Published in Applied physics express (01.03.2017)
Published in Applied physics express (01.03.2017)
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Journal Article
Characteristics of epitaxial lateral overgrowth AlN templates on (111)Si substrates for AlGaN deep-UV LEDs fabricated on different direction stripe patterns
Mino, Takuya, Hirayama, Hideki, Takano, Takayoshi, Tsubaki, Kenji, Sugiyama, Masakazu
Published in Physica status solidi. C (01.03.2012)
Published in Physica status solidi. C (01.03.2012)
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Journal Article
EPITAXIAL SUBSTRATE
SAKAI ATSUSHI, TAKANO TAKAYOSHI, HIRAYAMA HIDEKI, NOGUCHI NORIMICHI, TSUBAKI KENJI, MINO TAKUYA, TAKANO KIMIMICHI
Year of Publication 10.08.2017
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Year of Publication 10.08.2017
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