Atomic Layer Deposition of SiN for spacer applications in high-end logic devices
Koehler, F, Triyoso, D H, Hussain, I, Mutas, S, Bernhardt, H
Published in IOP conference series. Materials Science and Engineering (06.12.2012)
Published in IOP conference series. Materials Science and Engineering (06.12.2012)
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Journal Article
Physical and Electrical Characteristics of HfO2 Gate Dielectrics Deposited by ALD and MOCVD
Triyoso, D H, Ramon, M, Hegde, R I, Roan, D, Garcia, R, Baker, J, Wang, X-D, Fejes, P, White Jr, B E, Tobin, P J
Published in Journal of the Electrochemical Society (01.01.2005)
Published in Journal of the Electrochemical Society (01.01.2005)
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Journal Article
Toward accurate characterization of nitrogen depth profiles in ultrathin oxynitride films
Jiang, Z. X., Kim, K., Sieloff, D. D., Luo, T. Y., Varghese, A., Triyoso, D. H., Guenther, T., Robichaud, B., Benavides, J.
Published in Surface and interface analysis (01.10.2008)
Published in Surface and interface analysis (01.10.2008)
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Journal Article
High quality interfacial layer formation for Si0.75Ge0.25 (100) high-k metal gate stack
Siddiqui, S., Galatage, R., Zhao, W., Muthinti, G. Raja, Fronheiser, J., Srinivasan, P., Triyoso, D.H., Sporer, R., Jagannathan, H., Haran, B., Knorr, A.
Published in Microelectronic engineering (15.02.2020)
Published in Microelectronic engineering (15.02.2020)
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Journal Article
Characteristics of mixed oxides and nanolaminates of atomic layer deposited HfO2-TiO2 gate dielectrics
Triyoso, D H, Hegde, R I, Wang, X-D, Stoker, M W, Rai, R, Ramon, M E, White, B E, Tobin, P J
Published in Journal of the Electrochemical Society (01.01.2006)
Published in Journal of the Electrochemical Society (01.01.2006)
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Journal Article
Thermal stability, microstructure, and electrical properties of atomic layer deposited Hf6Ta2O17 gate dielectrics
Triyoso, D.H., Yu, Z., Gregory, R., Moore, K., Fejes, P., Schauer, S.
Published in Journal of materials research (01.10.2007)
Published in Journal of materials research (01.10.2007)
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Journal Article
Characterization of HfO2 dielectric films with low energy SIMS
JIANG, Z. X, KIM, K, LERMA, J, SIELOFF, D, TSENG, H, HEGDE, R. I, LUO, T. Y, YANG, J. Y, TRIYOSO, D. H, TOBIN, P. J
Published in Applied surface science (30.07.2006)
Published in Applied surface science (30.07.2006)
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Conference Proceeding
Journal Article
Progress and challenges of tungsten-filled through-silicon via
Triyoso, D H, Dao, T B, Kropewnicki, T, Martinez, F, Noble, R, Hamilton, M
Published in 2010 IEEE International Conference on Integrated Circuit Design and Technology (01.06.2010)
Published in 2010 IEEE International Conference on Integrated Circuit Design and Technology (01.06.2010)
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Conference Proceeding
Extending HKMG scaling on CMOS with FDSOI: Advantages and integration challenges
Triyoso, D. H., Carter, R., Kluth, J., Hempel, K., Gribelyuk, M., Kang, L., Kumar, A., Mulfinger, B., Javorka, P., Punchihewa, K., Child, A., McArdle, T., Holt, J., Straub, S., Sporer, R., Chen, P.
Published in 2016 International Conference on IC Design and Technology (ICICDT) (01.06.2016)
Published in 2016 International Conference on IC Design and Technology (ICICDT) (01.06.2016)
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Conference Proceeding
Dielectrics and Metal Stack Engineering for Multilevel Resistive Random-Access Memory
Misra, D., Zhao, P., Triyoso, D. H., Kaushik, V., Tapily, K., Clark, R. D., Consiglio, S., Hakamata, T., Wajda, C. S., Leusink, G. J.
Published in ECS journal of solid state science and technology (06.01.2020)
Published in ECS journal of solid state science and technology (06.01.2020)
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Journal Article
Fermi-level pinning at the polysilicon/metal oxide interface-Part I
Hobbs, C.C., Fonseca, L.R.C., Knizhnik, A., Dhandapani, V., Samavedam, S.B., Taylor, W.J., Grant, J.M., Dip, L.G., Triyoso, D.H., Hegde, R.I., Gilmer, D.C., Garcia, R., Roan, D., Lovejoy, M.L., Rai, R.S., Hebert, E.A., Hsing-Huang Tseng, Anderson, S.G.H., White, B.E., Tobin, P.J.
Published in IEEE transactions on electron devices (01.06.2004)
Published in IEEE transactions on electron devices (01.06.2004)
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Journal Article
Ferroelectric and Antiferroelectric Hf/Zr oxide films: past, present and future
Triyoso, D. H., Clark, R. D., Weinreich, W., Mart, C., Kampfe, T., Consiglio, S., Mukundan, V., Diebold, A., Tapily, K., Wajda, C., Leusink, G.
Published in 2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) (19.04.2021)
Published in 2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) (19.04.2021)
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Conference Proceeding
(Invited) Room Temperature Aging Effect Improvement for Device Stability and Manufacturability of FinFET Technologies
He, Xiaoli, Triyoso, Dina, Uppal, Suresh, Fu, Bianzhu, Zhang, Xing, Yamaguchi, Shimpei, Yong, Chloe, Liu, Bingwu, Joshi, Manoj, Samavedam, Srikanth
Published in ECS transactions (16.08.2017)
Published in ECS transactions (16.08.2017)
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Journal Article
(Invited) Extending Advanced CMOS Scaling with SiGe Channel Materials
Carter, Rick J, Sporer, Ryan, McArdle, Timothy J, Mulfinger, George Robert, Holt, Judson Robert, Beasor, Scott, Child, Amy, Fronheiser, Jody, Wahl, Jeremy A, Geisler, Holm, Kluth, George J, Triyoso, Dina H, Punchihewa, Kasun, Rana, Uzma, Vanamurthy, Laks, Sohn, D K
Published in ECS transactions (09.04.2018)
Published in ECS transactions (09.04.2018)
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Journal Article
High Performance and Yield for Super Steep Retrograde Wells (SSRW) by Well Implant / Si-based Epitaxy on Advanced Technology FinFETs
Rana, U., Brunco, D. P., Raman, S., Triyoso, D.H., Stoker, M.W., Johnson, J. B., Pantisano, L., Seo, K. D., Zhao, M., Reznicek, A., Krishnan, R., Moser, B., Freeman, J., Jang, L., Kaganer, E.
Published in 2019 Device Research Conference (DRC) (01.06.2019)
Published in 2019 Device Research Conference (DRC) (01.06.2019)
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Conference Proceeding
Defect Passivation With Fluorine and Interface Engineering for Hf-Based High- k/Metal Gate Stack Device Reliability and Performance Enhancement
Tseng Hsing-Huang, Tobin, P.J., Kalpat, S., Schaeffer, J.K., Ramon, M.E., Fonseca, L.R.C., Jiang, Z.X., Hegde, R.I., Triyoso, D.H., Semavedam, S.
Published in IEEE transactions on electron devices (01.12.2007)
Published in IEEE transactions on electron devices (01.12.2007)
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Journal Article
Fermi-level pinning at the polysilicon/metal-oxide interface-Part II
Hobbs, C.C., Fonseca, L.R.C., Knizhnik, A., Dhandapani, V., Samavedam, S.B., Taylor, W.J., Grant, J.M., Dip, L.G., Triyoso, D.H., Hegde, R.I., Gilmer, D.C., Garcia, R., Roan, D., Lovejoy, M.L., Rai, R.S., Hebert, E.A., Hsing-Huang Tseng, Anderson, S.G.H., White, B.E., Tobin, P.J.
Published in IEEE transactions on electron devices (01.06.2004)
Published in IEEE transactions on electron devices (01.06.2004)
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Journal Article
Novel N/PFET Vt control by TiN plasma nitridation for aggressive gate scaling
Togo, M., Tong, W. H., Zhang, X., Triyoso, D. H., Lian, J., Randriamihja, Y. Mamy, Uppal, S., Dag, S., Silva, E. C., Kota, M., Shimizu, T., Patil, S., Eller, M., Samavedam, S.
Published in 2016 IEEE Symposium on VLSI Technology (01.06.2016)
Published in 2016 IEEE Symposium on VLSI Technology (01.06.2016)
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Conference Proceeding
(Invited) Factors Impacting Threshold Voltage in Advanced CMOS Integration: Gate Last (FINFET) vs. Gate First (FDSOI)
Triyoso, Dina, Carter, Rick, Kluth, Jon, Luning, Scott, Child, Amy, Wahl, Jeremy, Mulfinger, Bob, Punchihewa, Kasun, Kumar, Anil, Kang, Laegu, Sporer, Ryan, Chen, Xiaobo, Straub, Sherry, Bohra, Girish, Patil, Suraj, Zhang, Xing, Chen, Alex, Togo, Mitsuhiro, Pal, Rohit
Published in ECS transactions (08.09.2015)
Published in ECS transactions (08.09.2015)
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Journal Article