Effective surface treatment for GaN metal-insulator-semiconductor high-electron-mobility transistors using HF plus N2 plasma prior to SiN passivation
Liu, Shih-Chien, Trinh, Hai-Dang, Dai, Gu-Ming, Huang, Chung-Kai, Dee, Chang-Fu, Majlis, Burhanuddin Yeop, Biswas, Dhrubes, Chang, Edward Yi
Published in Japanese Journal of Applied Physics (27.11.2015)
Published in Japanese Journal of Applied Physics (27.11.2015)
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Journal Article
Effects of Wet Chemical and Trimethyl Aluminum Treatments on the Interface Properties in Atomic Layer Deposition of Al2O3 on InAs
Trinh, Hai-Dang, Chang, Edward Yi, Wong, Yuen-Yee, Yu, Chih-Chieh, Chang, Chia-Yuan, Lin, Yueh-Chin, Nguyen, Hong-Quan, Tran, Binh-Tinh
Published in Jpn J Appl Phys (01.11.2010)
Published in Jpn J Appl Phys (01.11.2010)
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Journal Article
Effect of Nitridation on the Regrowth Interface of AlGaN/GaN Structures Grown by Molecular Beam Epitaxy on GaN Templates
Wong, Yuen-Yee, Huang, Wei-Ching, Trinh, Hai-Dang, Yang, Tsung-Hsi, Chang, Jet-Rung, Chen, Micheal, Chang, Edward Yi
Published in Journal of electronic materials (01.08.2012)
Published in Journal of electronic materials (01.08.2012)
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Journal Article
Investigation of Characteristics of Al2O3/n-In x Ga1−x As (x = 0.53, 0.7, and 1) Metal–Oxide–Semiconductor Structures
Trinh, Hai-Dang, Lin, Yueh-Chin, Kuo, Chien-I, Chang, Edward Yi, Nguyen, Hong-Quan, Wong, Yuen-Yee, Yu, Chih-Chieh, Chen, Chi-Ming, Chang, Chia-Yuan, Wu, Jyun-Yi, Chiu, Han-Chin, Yu, Terrence, Chang, Hui-Cheng, Tsai, Joseph, Hwang, David
Published in Journal of electronic materials (01.08.2013)
Published in Journal of electronic materials (01.08.2013)
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Journal Article
Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
Quang Ho Luc, Chang, Edward Yi, Hai Dang Trinh, Yueh Chin Lin, Hong Quan Nguyen, Yuen Yee Wong, Huy Binh Do, Salahuddin, Sayeef, Hu, Chenming Calvin
Published in IEEE transactions on electron devices (01.08.2014)
Published in IEEE transactions on electron devices (01.08.2014)
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Journal Article
Fabrication and characterization of n-In0.4Ga0.6N/p-Si solar cell
Tran, Binh-Tinh, Chang, Edward-Yi, Trinh, Hai-Dang, Lee, Ching-Ting, Sahoo, Kartika Chandra, Lin, Kung-Liang, Huang, Man-Chi, Yu, Hung-Wei, Luong, Tien-Tung, Chung, Chen-Chen, Nguyen, Chi-Lang
Published in Solar energy materials and solar cells (01.07.2012)
Published in Solar energy materials and solar cells (01.07.2012)
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Journal Article
Electrical Characterization and Materials Stability Analysis of La2O3/HfO2 Composite Oxides on n-In0.53Ga0.47As MOS Capacitors With Different Annealing Temperatures
YUEH CHIN LIN, HAI DANG TRINH, EDWARD YI CHANG, TING WEI CHUANG, IWAI, Hiroshi, KAKUSHIMA, Kuniyuki, AHMET, Parhat, CHUN HSIUNG LIN, DIAZ, Carlos H, HUI CHEN CHANG, JANG, Simon M
Published in IEEE electron device letters (01.10.2013)
Published in IEEE electron device letters (01.10.2013)
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Journal Article
Electrical Characteristics of Al2O3/InSb MOSCAPs and the Effect of Postdeposition Annealing Temperatures
HAI DANG TRINH, YUEH CHIN LIN, JANG, Simon, DIAZ, Carlos H, EDWARD YI CHANG, LEE, Ching-Ting, WANG, Shin-Yuan, HONG QUAN NGUYEN, YU SHENG CHIU, QUANG HO LUC, CHANG, Hui-Chen, LIN, Chun-Hsiung
Published in IEEE transactions on electron devices (01.05.2013)
Published in IEEE transactions on electron devices (01.05.2013)
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Journal Article
Band Alignment Parameters of Al2O3/InSb Metal--Oxide--Semiconductor Structure and Their Modification with Oxide Deposition Temperatures
Trinh, Hai Dang, Nguyen, Minh Thuy, Lin, Yueh Chin, Duong, Quoc Van, Nguyen, Hong Quan, Chang, Edward Yi
Published in Applied physics express (01.06.2013)
Published in Applied physics express (01.06.2013)
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Journal Article
Effect of annealing processes on the electrical properties of the atomic layer deposition Al2O3/In0.53Ga0.47As metal oxide semiconductor capacitors
Luc, Quang-Ho, Chang, Edward Yi, Trinh, Hai-Dang, Nguyen, Hong-Quan, Tran, Binh-Tinh, Lin, Yueh-Chin
Published in Japanese Journal of Applied Physics (05.02.2014)
Published in Japanese Journal of Applied Physics (05.02.2014)
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Electrical Characterization and Materials Stability Analysis of / Composite Oxides on n- MOS Capacitors With Different Annealing Temperatures
Yueh Chin Lin, Hai Dang Trinh, Ting Wei Chuang, Iwai, Hiroshi, Kakushima, Kuniyuki, Ahmet, Parhat, Chun Hsiung Lin, Diaz, Carlos H., Hui Chen Chang, Jang, Simon M., Chang, Edward Yi
Published in IEEE electron device letters (01.10.2013)
Published in IEEE electron device letters (01.10.2013)
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Journal Article
Effect of Postdeposition Annealing Temperatures on Electrical Characteristics of Molecular-Beam-Deposited HfO2 on n-InAs/InGaAs Metal--Oxide--Semiconductor Capacitors
Trinh, Hai-Dang, Lin, Yueh-Chin, Wang, Huan-Chung, Chang, Chia-Hua, Kakushima, Kuniyuki, Iwai, Hiroshi, Kawanago, Takamasa, Lin, Yan-Gu, Chen, Chi-Ming, Wong, Yuen-Yee, Huang, Guan-Ning, Hudait, Mantu, Chang, Edward Yi
Published in Applied physics express (01.02.2012)
Published in Applied physics express (01.02.2012)
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INTERFACE FILM TO MITIGATE SIZE EFFECT OF MEMORY DEVICE
KUANG HSUN CHUNG, TRINH HAI DANG, TSAI CHENG YUAN, WEI YI YANG, LEE BI SHEN
Year of Publication 07.06.2024
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Electrical Characteristics of / MOSCAPs and the Effect of Postdeposition Annealing Temperatures
Hai Dang Trinh, Yueh Chin Lin, Chang, Edward Yi, Ching-Ting Lee, Shin-Yuan Wang, Hong Quan Nguyen, Yu Sheng Chiu, Quang Ho Luc, Hui-Chen Chang, Chun-Hsiung Lin, Jang, Simon, Diaz, Carlos H.
Published in IEEE transactions on electron devices (01.05.2013)
Published in IEEE transactions on electron devices (01.05.2013)
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DATA STORAGE STRUCTURE FOR IMPROVING MEMORY CELL RELIABILITY
TSAI TZU CHUNG, JIANG FA SHEN, TRINH HAI DANG, TSAI CHENG YUAN, WU CHII MING
Year of Publication 12.12.2023
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Year of Publication 12.12.2023
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C–V characteristics of epitaxial germanium metal–oxide–semiconductor capacitor on GaAs substrate with ALD Al2O3 dielectric
Tang, Shih Hsuan, Kuo, Chien I., Trinh, Hai Dang, Hudait, Mantu, Chang, Edward Yi, Hsu, Ching Yi, Su, Yung Hsuan, Luo, Guang-Li, Nguyen, Hong Quan
Published in Microelectronic engineering (01.09.2012)
Published in Microelectronic engineering (01.09.2012)
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Threading Dislocation Blocking in Metamorphic InGaAs/GaAs for Growing High-Quality In0.5Ga0.5As and In0.3Ga0.7As on GaAs Substrate by Using Metal Organic Chemical Vapor Deposition
Nguyen, Hong-Quan, Chang, Edward Yi, Yu, Hung-Wei, Trinh, Hai-Dang, Dee, Chang-Fu, Wong, Yuen-Yee, Hsu, Ching-Hsiang, Tran, Binh-Tinh, Chung, Chen-Chen
Published in Applied physics express (01.05.2012)
Published in Applied physics express (01.05.2012)
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INTERFACE FILM TO MITIGATE SIZE EFFECT OF MEMORY DEVICE
KUANG HSUN CHUNG, TRINH HAI DANG, TSAI CHENG YUAN, WEI YI YANG, LEE BI SHEN
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