Root-Cause Analysis of Peak Power Saturation in Pulse-Pumped 1100 nm Broad Area Single Emitter Diode Lasers
Xiaozhuo Wang, Crump, Paul, Wenzel, Hans, Liero, Armin, Hoffmann, Thomas, Pietrzak, Agnieszka, Schultz, Christoph Matthias, Klehr, Andreas, Ginolas, Arnim, Einfeldt, Sven, Bugge, Frank, Erbert, Götz, Trankle, Günther
Published in IEEE journal of quantum electronics (01.05.2010)
Published in IEEE journal of quantum electronics (01.05.2010)
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Journal Article
A portable shifted excitation Raman difference spectroscopy system: device and field demonstration
Maiwald, Martin, Müller, André, Sumpf, Bernd, Tränkle, Günther
Published in Journal of Raman spectroscopy (01.10.2016)
Published in Journal of Raman spectroscopy (01.10.2016)
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Journal Article
Micro-integrated extended cavity diode lasers for precision potassium spectroscopy in space
Luvsandamdin, Erdenetsetseg, Kürbis, Christian, Schiemangk, Max, Sahm, Alexander, Wicht, Andreas, Peters, Achim, Erbert, Götz, Tränkle, Günther
Published in Optics express (07.04.2014)
Published in Optics express (07.04.2014)
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Journal Article
Picosecond pulses with 40 W peak power from a passively mode‐locked tapered quantum well laser
Wohlfeil, Shulin, Christopher, Heike, Fricke, Jörg, Wenzel, Hans, Knigge, Andrea, Tränkle, Günther
Published in Electronics letters (01.02.2023)
Published in Electronics letters (01.02.2023)
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Journal Article
Defect analysis in AlGaN layers on AlN templates obtained by epitaxial lateral overgrowth
Mogilatenko, Anna, Küller, Viola, Knauer, Arne, Jeschke, J., Zeimer, Ute, Weyers, Markus, Tränkle, Günther
Published in Journal of crystal growth (15.09.2014)
Published in Journal of crystal growth (15.09.2014)
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Journal Article
Comparative Study of Monolithic Integrated MMI-Coupler-Based Dual-Wavelength Lasers
Koester, Jan-Philipp, Wenzel, Hans, Fricke, Jorg, Brox, Olaf, Zeghuzi, Anissa, Muller, Andre, Theurer, Lara Sophie, Sumpf, Bernd, Knigge, Andrea, Trankle, Gunther
Published in IEEE journal of selected topics in quantum electronics (01.01.2022)
Published in IEEE journal of selected topics in quantum electronics (01.01.2022)
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Journal Article
Comparison of two concepts for dual-wavelength DBR ridge waveguide diode lasers at 785 nm suitable for shifted excitation Raman difference spectroscopy
Sumpf, Bernd, Maiwald, Martin, Müller, André, Fricke, Jörg, Ressel, Peter, Bugge, Frank, Erbert, Götz, Tränkle, Günther
Published in Applied physics. B, Lasers and optics (01.08.2015)
Published in Applied physics. B, Lasers and optics (01.08.2015)
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Journal Article
Efficient, High Brightness 1030 nm DBR Tapered Diode Lasers With Optimized Lateral Layout
Muller, Andre, Zink, Christof, Fricke, Jorg, Bugge, Frank, Erbert, Gotz, Sumpf, Bernd, Trankle, Gunther
Published in IEEE journal of selected topics in quantum electronics (01.11.2017)
Published in IEEE journal of selected topics in quantum electronics (01.11.2017)
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Journal Article
Switchable thermal waveguides in GaAs based devices
Hildenstein, Philipp, Feise, David, Mauerhoff, Felix, Werner, Nils, Paschke, Katrin, Tränkle, Günther
Published in AIP advances (01.02.2023)
Published in AIP advances (01.02.2023)
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Journal Article
Influence of AlN buffer layer on growth of AlGaN by HVPE
Fleischmann, Simon, Richter, Eberhard, Mogilatenko, Anna, Weyers, Markus, Tränkle, Günther
Published in physica status solidi (b) (01.08.2017)
Published in physica status solidi (b) (01.08.2017)
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Journal Article
Experimental Studies Into the Beam Parameter Product of GaAs High-Power Diode Lasers
Crump, Paul, Elattar, Mohamed, Miah, Md. Jarez, Ekterai, Michael, Karow, Matthias M., Martin, Dominik, Maasdorf, Andre, McDougall, Stewart, Holly, Carlo, Rauch, Simon, Gruetzner, Stefan, Strohmaier, Stephan, Trankle, Gunther
Published in IEEE journal of selected topics in quantum electronics (01.01.2022)
Published in IEEE journal of selected topics in quantum electronics (01.01.2022)
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Journal Article
Punchthrough-Voltage Enhancement of AlGaN/GaN HEMTs Using AlGaN Double-Heterojunction Confinement
Bahat-Treidel, E., Hilt, O., Brunner, F., Wurfl, J., Trankle, G.
Published in IEEE transactions on electron devices (01.12.2008)
Published in IEEE transactions on electron devices (01.12.2008)
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