Complementary Si MESFET concept using silicon-on-sapphire technology
Tove, P.A., Bohlin, K., Masszi, F., Norde, H., Nylander, J., Tiren, J., Magnusson, U.
Published in IEEE electron device letters (01.01.1988)
Published in IEEE electron device letters (01.01.1988)
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Journal Article
Influence of silicon-sapphire interface defects on SOS MESFET behavior
Nylander, J.O., Magnusson, U., Rosling, M., Tove, P.A.
Published in Solid-state electronics (01.10.1988)
Published in Solid-state electronics (01.10.1988)
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Journal Article
Flying-spot scanning for the separate mapping of resistivity and minority-carrier lifetime in silicon
Bleichner, H., Nordlander, E., Fiedler, G., Tove, P.A.
Published in Solid-state electronics (01.08.1986)
Published in Solid-state electronics (01.08.1986)
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Journal Article
Comparison of back-scattering parameters using high energy oxygen and helium ions
Petersson, S., Tove, P.A., Meyer, O., Sundqvist, B., Johansson, A.
Published in Thin solid films (03.12.1973)
Published in Thin solid films (03.12.1973)
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Journal Article
Position-sensitive focal plane detectors for electron (ESCA) spectrometers
Asplund, L., Gelius, U., Tove, P.A., Eriksson, S.Å., Bingefors, N.
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (01.01.1984)
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (01.01.1984)
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Journal Article