Time-domain charge pumping on silicon-on-insulator MOS devices
Watanabe, Tokinobu, Hori, Masahiro, Tsuchiya, Toshiaki, Fujiwara, Akira, Ono, Yukinori
Published in Japanese Journal of Applied Physics (01.01.2017)
Published in Japanese Journal of Applied Physics (01.01.2017)
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Journal Article
Direct Observation of Fluctuations in the Number and Individual Electronic Properties of Interface Traps in Nanoscale Metal--Oxide--Semiconductor Field-Effect Transistors
Tsuchiya, Toshiaki, Mori, Yuki, Morimura, Yuta, Mogami, Tohru, Ohji, Yuzuru
Published in Japanese Journal of Applied Physics (01.06.2010)
Published in Japanese Journal of Applied Physics (01.06.2010)
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Journal Article
(Invited) Characterization of Oxide Traps Participating in Random Telegraph Noise Using Charging History Effects in Nano-Scaled MOSFETs
Tsuchiya, Toshiaki, Tamura, Naoyoshi, Sakakidani, Akihito, Sonoda, Kenichiro, Kamei, Masayuki, Yamakawa, Shinya, Kuwabara, Sumio
Published in ECS transactions (31.08.2013)
Published in ECS transactions (31.08.2013)
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Journal Article
The Effect of Thick Interconnections Formed by Gold Electroplating on the Characteristics of Metal--Oxide--Semiconductor Field-Effect Transistors
Shimoyama, Nobuhiro, Sato, Norio, Ishii, Hiromu, Kamei, Toshikazu, Kudou, Kazuhisa, Machida, Katsuyuki, Tsuchiya, Toshiaki
Published in Japanese Journal of Applied Physics (01.01.2010)
Published in Japanese Journal of Applied Physics (01.01.2010)
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Journal Article
Influences of Grain Boundaries on Temperature Dependence of Device Characteristics and on Hot Carrier Effects in Low-Temperature Polycrystalline Silicon Thin Film Transistors Containing Large Grains
Tsuchiya, Toshiaki, Miura, Takafumi, Yamai, Tsubasa, Kawachi, Genshiro, Matsumura, Masakiyo
Published in Japanese Journal of Applied Physics (01.03.2007)
Published in Japanese Journal of Applied Physics (01.03.2007)
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Journal Article