The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction-Diffusion to Switching Oxide Traps
Grasser, T., Kaczer, B., Goes, W., Reisinger, H., Aichinger, T., Hehenberger, P., Wagner, P., Schanovsky, F., Franco, J., Luque, María Toledano, Nelhiebel, M.
Published in IEEE transactions on electron devices (01.11.2011)
Published in IEEE transactions on electron devices (01.11.2011)
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Journal Article
Implications of BTI-Induced Time-Dependent Statistics on Yield Estimation of Digital Circuits
Weckx, Pieter, Kaczer, Ben, Toledano-Luque, Maria, Raghavan, Praveen, Franco, Jacopo, Roussel, Philippe J., Groeseneken, Guido, Catthoor, Francky
Published in IEEE transactions on electron devices (01.03.2014)
Published in IEEE transactions on electron devices (01.03.2014)
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Journal Article
(Invited) Random Telegraph Noise: From a Device Physicist's Dream to a Designer's Nightmare
Simoen, Eddy, Kaczer, Ben, Toledano-Luque, Maria, Claeys, Cor
Published in ECS transactions (15.09.2011)
Published in ECS transactions (15.09.2011)
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Journal Article
Reliability impact of advanced doping techniques for DRAM peripheral MOSFETs
Spessot, Alessio, Ritzenthaler, Romain, Schram, Tom, Aoulaiche, Marc, Cho, Moonju, Luque, Maria Toledano, Horiguchi, Naoto, Fazan, Pierre
Published in 2015 International Conference on IC Design & Technology (ICICDT) (01.06.2015)
Published in 2015 International Conference on IC Design & Technology (ICICDT) (01.06.2015)
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Conference Proceeding
Superior Reliability of Junctionless pFinFETs by Reduced Oxide Electric Field
Toledano-Luque, Maria, Matagne, Philippe, Sibaja-Hernandez, Arturo, Chiarella, Thomas, Ragnarsson, Lars-Ake, Soree, Bart, Cho, Moonju, Mocuta, Anda, Thean, Aaron
Published in IEEE electron device letters (01.12.2014)
Published in IEEE electron device letters (01.12.2014)
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Journal Article
Applying Complementary Trap Characterization Technique to Crystalline γ-Phase-Al2O3 for Improved Understanding of Nonvolatile Memory Operation and Reliability
ZAHID, Mohammed B, RUIZ AGUADO, Daniel, DEGRAEVE, R, WANG, W. C, GOVOREANU, Bogdan, TOLEDANO-LUQUE, Maria, AFANAS'EV, V. V, VAN HOUDT, Jan
Published in IEEE transactions on electron devices (01.11.2010)
Published in IEEE transactions on electron devices (01.11.2010)
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Journal Article
SiGe Channel Technology: Superior Reliability Toward Ultra-Thin EOT Devices-Part II: Time-Dependent Variability in Nanoscaled Devices and Other Reliability Issues
Franco, J., Kaczer, B., Toledano-Luque, M., Roussel, P. J., Kauerauf, T., Mitard, J., Witters, L., Grasser, T., Groeseneken, G.
Published in IEEE transactions on electron devices (01.01.2013)
Published in IEEE transactions on electron devices (01.01.2013)
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Journal Article
RTN assessment of traps in polysilicon cylindrical vertical FETs for NVM application
de Andrade, Maria Glória Caño, Toledano-Luque, María, Fourati, Fatma, Degraeve, Robin, Martino, João Antonio, Claeys, Cor, Simoen, Eddy, Van den Bosch, Geert, Van Houdt, Jan
Published in Microelectronic engineering (01.09.2013)
Published in Microelectronic engineering (01.09.2013)
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Journal Article
Fast V Transients After the Program/Erase of Flash Memory Stacks With High- k Dielectrics
Toledano-Luque, María, Degraeve, Robin, Zahid, Mohammed B, Kaczer, Ben, Blomme, Pieter, Kittl, Jorge A, Jurczak, M, Van Houdt, Jan, Groeseneken, Guido
Published in IEEE transactions on electron devices (01.03.2011)
Published in IEEE transactions on electron devices (01.03.2011)
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Journal Article
Impact of Individual Charged Gate-Oxide Defects on the Entire I- V Characteristic of Nanoscaled FETs
Franco, J., Kaczer, B., Toledano-Luque, M., Bukhori, M. F., Roussel, P. J., Grasser, T., Asenov, A., Groeseneken, G.
Published in IEEE electron device letters (01.06.2012)
Published in IEEE electron device letters (01.06.2012)
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Journal Article
Applying Complementary Trap Characterization Technique to Crystalline \gamma-Phase- \hbox \hbox for Improved Understanding of Nonvolatile Memory Operation and Reliability
Zahid, Mohammed B, Aguado, Daniel Ruiz, Degraeve, R, Wang, W C, Govoreanu, Bogdan, Toledano-Luque, María, Afanasev, V V, Van Houdt, Jan
Published in IEEE transactions on electron devices (01.11.2010)
Published in IEEE transactions on electron devices (01.11.2010)
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Journal Article
Fast Ramped Voltage Characterization of Single Trap Bias and Temperature Impact on Time-Dependent V Variability
Toledano-Luque, Maria, Degraeve, Robin, Roussel, Philippe J., Ragnarsson, Lars-Ake, Chiarella, Thomas, Horiguchi, Naoto, Mocuta, Anda, Thean, Aaron
Published in IEEE transactions on electron devices (01.09.2014)
Published in IEEE transactions on electron devices (01.09.2014)
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Journal Article
New Developments in Charge Pumping Measurements on Thin Stacked Dielectrics
Toledano-Luque, M., Degraeve, R., Zahid, M.B., Pantisano, L., San Andres, E., Groeseneken, G., De Gendt, S.
Published in IEEE transactions on electron devices (01.11.2008)
Published in IEEE transactions on electron devices (01.11.2008)
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Journal Article
Impact of Individual Charged Gate-Oxide Defects on the Entire I D - V G Characteristic of Nanoscaled FETs
Franco, Jacopo, Kaczer, Ben, Toledano-Luque, Maria, Bukhori, Muhammad Faiz, Roussel, Philippe J, Grasser, Tibor, Asenov, Asen, Groeseneken, Guido
Published in IEEE electron device letters (01.06.2012)
Published in IEEE electron device letters (01.06.2012)
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Journal Article
Accurate gate impedance determination on ultraleaky MOSFETs by fitting to a three-lumped-parameter model at frequencies from DC to RF
SAN ANDRES, Enrique, PANTISANO, Luigi, RAMOS, Javier, ROUSSEL, Philippe J, O'SULLIVAN, Barry J, TOLEDANO-LUQUE, Maria, DEGENDT, Stefan, GROESENEKEN, Guido
Published in IEEE transactions on electron devices (01.07.2007)
Published in IEEE transactions on electron devices (01.07.2007)
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Journal Article
Fast Ramped Voltage Characterization of Single Trap Bias and Temperature Impact on Time-Dependent \(V_{\rm TH}\) Variability
Toledano-Luque, Maria, Degraeve, Robin, Roussel, Philippe J., Ragnarsson, Lars-Ake, Chiarella, Thomas, Horiguchi, Naoto, Mocuta, Anda, Thean, Aaron
Published in IEEE transactions on electron devices (01.09.2014)
Published in IEEE transactions on electron devices (01.09.2014)
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Journal Article
Experimental Evidence Toward Understanding Charge Pumping Signals in 3-D Devices With Poly-Si Channel
Baojun Tang, Weidong Zhang, Toledano-Luque, Maria, Jian Fu Zhang, Degraeve, Robin, Zhigang Ji, Arreghini, Antonio, Van den Bosch, Geert, Van Houdt, Jan
Published in IEEE transactions on electron devices (01.05.2014)
Published in IEEE transactions on electron devices (01.05.2014)
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Journal Article