Highly Reliable Coding Methods for Emerging Applications: Archive and Enterprise Solid-State Drives (SSDs)
Tanakamaru, Shuhei, Kitamura, Yuta, Yamazaki, Senju, Tokutomi, Tsukasa, Takeuchi, Ken
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Published in IEEE transactions on circuits and systems. I, Regular papers (01.03.2015)
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Versatile TLC NAND flash memory control to reduce read disturb errors by 85% and extend read cycles by 6.7-times of Read-Hot and Cold data for cloud data centers
Kobayashi, Atsuro, Tokutomi, Tsukasa, Takeuchi, Ken
Published in 2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits) (01.06.2016)
Published in 2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits) (01.06.2016)
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MEMORY SYSTEM AND SEMICONDUCTOR MEMORY CONTROL METHOD
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Year of Publication 21.12.2023
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Advanced error prediction LDPC for high-speed reliable TLC nand-based SSDs
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Published in 2014 IEEE 6th International Memory Workshop (IMW) (01.05.2014)
Published in 2014 IEEE 6th International Memory Workshop (IMW) (01.05.2014)
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Conference Proceeding
Design Methodology for Highly Reliable, High Performance ReRAM and 3-Bit/Cell MLC NAND Flash Solid-State Storage
Tanakamaru, Shuhei, Yamazawa, Hiroki, Tokutomi, Tsukasa, Ning, Sheyang, Takeuchi, Ken
Published in IEEE transactions on circuits and systems. I, Regular papers (01.03.2015)
Published in IEEE transactions on circuits and systems. I, Regular papers (01.03.2015)
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MEMORY SYSTEM
SUZUKI RIKI, HIDA TOSHIKATSU, TOKUTOMI TSUKASA, WATANABE KIWAMU, ONAGI TAKAHIRO
Year of Publication 17.03.2022
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Year of Publication 17.03.2022
Patent
Advanced error-prediction LDPC with temperature compensation for highly reliable SSDs
Tokutomi, Tsukasa, Tanakamaru, Shuhei, Iwasaki, Tomoko Ogura, Takeuchi, Ken
Published in Solid-state electronics (01.09.2015)
Published in Solid-state electronics (01.09.2015)
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Journal Article
System-level error correction by read-disturb error model of 1Xnm TLC NAND Flash memory for read-intensive enterprise solid-state drives (SSDs)
Deguchi, Yoshiaki, Tokutomi, Tsukasa, Takeuchi, Ken
Published in 2016 IEEE International Reliability Physics Symposium (IRPS) (01.04.2016)
Published in 2016 IEEE International Reliability Physics Symposium (IRPS) (01.04.2016)
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Conference Proceeding
NON-VOLATILE MEMORY AND MEMORY SYSTEM
SUZUKI RIKI, KOJIMA YOSHIHISA, TOKUTOMI TSUKASA, SHIRAKAWA MASANOBU, TAKADA MARIE
Year of Publication 12.03.2020
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Year of Publication 12.03.2020
Patent
MEMORY SYSTEM
ASAMI SHOHEI, TOKUTOMI TSUKASA, SHIRAKAWA MASANOBU, TAKADA MARIE, FUJIWARA MASAMICHI
Year of Publication 05.03.2020
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Year of Publication 05.03.2020
Patent
MEMORY SYSTEM
KOJIMA YOSHIHISA, TOKUTOMI TSUKASA, TACHI KIICHI, SHIRAKAWA MASANOBU, TAKADA MARIE
Year of Publication 11.04.2019
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Year of Publication 11.04.2019
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Quick-low-density parity check and dynamic threshold voltage optimization in 1X nm triple-level cell NAND flash memory with comprehensive analysis of endurance, retention-time, and temperature variation
Doi, Masafumi, Tokutomi, Tsukasa, Hachiya, Shogo, Kobayashi, Atsuro, Tanakamaru, Shuhei, Ning, Sheyang, Iwasaki, Tomoko Ogura, Takeuchi, Ken
Published in Japanese Journal of Applied Physics (01.08.2016)
Published in Japanese Journal of Applied Physics (01.08.2016)
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