Fabrication of 4H-SiC PiN diodes on substrate grown by HTCVD method
Tokuda, Yuichiro, Uehigashi, Hideyuki, Murata, Koichi, Tsuchida, Hidekazu
Published in Japanese Journal of Applied Physics (01.04.2020)
Published in Japanese Journal of Applied Physics (01.04.2020)
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Journal Article
Reduction in dislocation densities in 4H-SiC bulk crystal grown at high growth rate by high-temperature gas-source method
Hoshino, Norihiro, Kamata, Isaho, Kanda, Takahiro, Tokuda, Yuichiro, Kuno, Hironari, Tsuchida, Hidekazu
Published in Applied physics express (01.09.2020)
Published in Applied physics express (01.09.2020)
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Journal Article
Fast growth of n-type 4H-SiC bulk crystal by gas-source method
Hoshino, Norihiro, Kamata, Isaho, Tokuda, Yuichiro, Makino, Emi, Kanda, Takahiro, Sugiyama, Naohiro, Kuno, Hironari, Kojima, Jun, Tsuchida, Hidekazu
Published in Journal of crystal growth (15.11.2017)
Published in Journal of crystal growth (15.11.2017)
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Journal Article
Stable and high-speed SiC bulk growth without dendrites by the HTCVD method
Tokuda, Yuichiro, Makino, Emi, Sugiyama, Naohiro, Kamata, Isaho, Hoshino, Norihiro, Kojima, Jun, Hara, Kazukuni, Tsuchida, Hidekazu
Published in Journal of crystal growth (15.08.2016)
Published in Journal of crystal growth (15.08.2016)
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Journal Article
Doping Fluctuation and Defect Formation in Fast 4H-SiC Crystal Growth Using a High-Temperature Gas Source Method
Kojima, Jun, Tokuda, Yuichiro, Sugiyama, Naohiro, Hoshino, Norihiro, Makino, Emi, Kamata, Isaho, Tsuchida, Hidekazu
Published in Materials Science Forum (24.05.2016)
Published in Materials Science Forum (24.05.2016)
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Journal Article
Development of 150-mm 4H-SiC Substrates Using a High-Temperature Chemical Vapor Deposition Method
Kanda, Takahiro, Ohya, Nobuyuki, Okamoto, Takeshi, Betsuyaku, Kiyoshi, Tokuda, Yuichiro, Hoshino, Norihiro, Tsuchida, Hidekazu, Kamata, Isaho
Published in Materials science forum (28.07.2020)
Published in Materials science forum (28.07.2020)
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Journal Article
Fast 4H-SiC Bulk Growth by High-Temperature Gas Source Method
Kanda, Takahiro, Ohya, Nobuyuki, Okamoto, Takeshi, Kamata, Isaho, Tokuda, Yuichiro, Uehigashi, Hideyuki, Tsuchida, Hidekazu, Hoshino, Norihiro, Kuno, Hironari
Published in Materials science forum (28.07.2020)
Published in Materials science forum (28.07.2020)
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Journal Article
Selective and one-pot formation of phenols by anodic oxidation
Fujimoto, Kazuo, Tokuda, Yuichiro, Maekawa, Hirofumi, Matsubara, Yoshiharu, Mizuno, Takumi, Nishiguchi, Ikuzo
Published in Tetrahedron (11.03.1996)
Published in Tetrahedron (11.03.1996)
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Journal Article
SILICON CARBIDE SINGLE CRYSTAL, AND PRODUCTION METHOD THEREOF
TOKUDA YUICHIRO, HORIAI AKIYOSHI, TSUCHIDA SHUICHI, HOSHINO NORIHIRO, KAMATA ISAO
Year of Publication 10.06.2021
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Year of Publication 10.06.2021
Patent
MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL WAFER AND SILICON CARBIDE SINGLE CRYSTAL INGOT
TOKUDA YUICHIRO, TSUCHIDA SHUICHI, HOSHINO NORIHIRO, KAMATA ISAO, OKAMOTO TAKESHI
Year of Publication 01.04.2021
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Year of Publication 01.04.2021
Patent
Immobilization Phenomenon of Partials Surrounding Double Shockley Stacking Faults in Heavily Nitrogen Doped 4H-SiC Crystal with Thermal Anneal
Tokuda, Yuichiro, Kato, Tomohisa, Okumura, Hajime, Suo, Hiromasa, Hoshino, Norihiro, Tsuchida, Hidekazu, Eto, Kazuma, Kamata, Isaho, Sugiyama, Naohiro
Published in Materials science forum (05.06.2018)
Published in Materials science forum (05.06.2018)
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Journal Article
Developing Technologies of SiC Gas Source Growth Method
Tokuda, Yuichiro, Makino, Emi, Hoshino, Norihiro, Kamata, Isaho, Tsuchida, Hidekazu, Sugiyama, Naohiro, Kojima, Jun
Published in Materials Science Forum (24.05.2016)
Published in Materials Science Forum (24.05.2016)
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Journal Article
X-Ray Topography Analysis of 4H-SiC Crystals Grown by the High-Temperature Gas Source Method
Kojima, Jun, Kanda, Takahiro, Tokuda, Yuichiro, Hoshino, Norihiro, Makino, Emi, Tsuchida, Hidekazu, Kamata, Isaho, Kuno, Hironari, Sugiyama, Naohiro
Published in Materials science forum (05.06.2018)
Published in Materials science forum (05.06.2018)
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Journal Article
SILICON CARBIDE SINGLE CRYSTAL AND METHOD FOR MANUFACTURING THE SAME
TOKUDA YUICHIRO, KAMIHIGASHI HIDEYUKI, TSUCHIDA SHUICHI, HOSHINO NORIHIRO, KAMATA ISAO
Year of Publication 26.12.2019
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Year of Publication 26.12.2019
Patent