A Gradient-Gated SPAD Array for Non-Line-of-Sight Imaging
Zhao, Jiuxuan, Gramuglia, Francesco, Keshavarzian, Pouyan, Toh, Eng-Huat, Tng, Michelle, Lim, Louis, Dhulla, Vinit, Quek, Elgin, Lee, Myung-Jae, Charbon, Edoardo
Published in IEEE journal of selected topics in quantum electronics (01.01.2024)
Published in IEEE journal of selected topics in quantum electronics (01.01.2024)
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Journal Article
Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process
Liu, Feng, Bruschini, Claudio, Toh, Eng-Huat, Zheng, Ping, Sun, Yongshun, Dhulla, Vinit, Quek, Elgin, Lee, Myung-Jae, Charbon, Edoardo
Published in IEEE journal of selected topics in quantum electronics (01.01.2024)
Published in IEEE journal of selected topics in quantum electronics (01.01.2024)
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Journal Article
Strain and Materials Engineering for the I-MOS Transistor With an Elevated Impact-Ionization Region
Eng-Huat Toh, Wang, G.H., Lap Chan, Guo-Qiang Lo, Samudra, G., Yee-Chia Yeo
Published in IEEE transactions on electron devices (01.10.2007)
Published in IEEE transactions on electron devices (01.10.2007)
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Journal Article
Performance comparison of cross-like Hall plates with different covering layers
Lyu, Fei, Zhang, Zhenyan, Toh, Eng-Huat, Liu, Xinfu, Ding, Yinjie, Pan, Yifan, Li, Chengjie, Li, Li, Sha, Jin, Pan, Hongbing
Published in Sensors (Basel, Switzerland) (31.12.2014)
Published in Sensors (Basel, Switzerland) (31.12.2014)
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Journal Article
Influences of an Aluminum Covering Layer on the Performance of Cross-Like Hall Devices
Lyu, Fei, Liu, Xinfu, Ding, Yinjie, Toh, Eng-Huat, Zhang, Zhenyan, Pan, Yifan, Wang, Zhen, Li, Chengjie, Li, Li, Sha, Jin, Pan, Hongbing
Published in Sensors (Basel, Switzerland) (15.01.2016)
Published in Sensors (Basel, Switzerland) (15.01.2016)
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Journal Article
Device Physics and Design of a L-Shaped Germanium Source Tunneling Transistor
Low, Kain Lu, Zhan, Chunlei, Han, Genquan, Yang, Yue, Goh, Kian-Hui, Guo, Pengfei, Toh, Eng-Huat, Yeo, Yee-Chia
Published in Japanese Journal of Applied Physics (01.02.2012)
Published in Japanese Journal of Applied Physics (01.02.2012)
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Journal Article
Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications
Toh, Eng-Huat, Wang, Grace Huiqi, Samudra, Ganesh, Yeo, Yee-Chia
Published in Journal of applied physics (15.05.2008)
Published in Journal of applied physics (15.05.2008)
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Journal Article
Strained Silicon-Germanium-On-Insulator n-MOSFET With Embedded Silicon Source-and-Drain Stressors
Wang, G.H., Toh Eng-Huat, Du, A., Lo Guo-Qiang, Samudra, G., Yeo Yee-Chia
Published in IEEE electron device letters (01.01.2008)
Published in IEEE electron device letters (01.01.2008)
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Journal Article
I-MOS Transistor With an Elevated Silicon-Germanium Impact-Ionization Region for Bandgap Engineering
Eng-Huat Toh, Grace Huiqi Wang, Lap Chan, Guo-Qiang Lo, Samudra, G., Yee-Chia Yeo
Published in IEEE electron device letters (01.12.2006)
Published in IEEE electron device letters (01.12.2006)
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Journal Article
A Modular Three-Dimensional Hall Effect Sensor for Performance Optimization
Toh, Eng-Huat, Sun, Yongshun, Zheng, Ping, Shajan, Mathew, Cao, Patrick, Islam, Mohd Nurul, Wong, Jian-Yi, Arikath, Praveen, Jain, Ruchil, Tan, Tam Lyn, Quek, Elgin
Published in IEEE sensors journal (15.06.2022)
Published in IEEE sensors journal (15.06.2022)
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Journal Article
Cointegration of In Situ Doped Silicon-Carbon Source and Silicon-Carbon I-Region in P-Channel Silicon Nanowire Impact-Ionization Transistor
Eng-Huat Toh, Wang, G.H., Lap Chan, Weeks, D., Bauer, M., Spear, J., Thomas, S.G., Samudra, G., Yee-Chia Yeo
Published in IEEE electron device letters (01.07.2008)
Published in IEEE electron device letters (01.07.2008)
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Journal Article
Device Physics and Performance Optimization of Impact-Ionization Metal–Oxide–Semiconductor Transistors formed using a Double-Spacer Fabrication Process
Toh, Eng-Huat, Wang, Grace Huiqi, Chan, Lap, Samudra, Ganesh S., Yeo, Yee-Chia
Published in Japanese Journal of Applied Physics (01.04.2008)
Published in Japanese Journal of Applied Physics (01.04.2008)
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Journal Article
Device Design and Scalability of a Double-Gate Tunneling Field-Effect Transistor with Silicon–Germanium Source
Toh, Eng-Huat, Wang, Grace Huiqi, Chan, Lap, Sylvester, Dennis, Heng, Chun-Huat, Samudra, Ganesh S., Yeo, Yee-Chia
Published in Japanese Journal of Applied Physics (01.04.2008)
Published in Japanese Journal of Applied Physics (01.04.2008)
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Journal Article
First Foundry Three-Dimensional Hall Effect Sensor for System-on-Chip Integration
Toh, Eng-Huat, Sun, Yongshun, Zheng, Ping, Shajan, Mathew, Cao, Patrick, Islam, Mohd Nurul, Wong, Jian-Yi, Arikath, Praveen, Jain, Ruchil, Tan, Tam Lyn, Quek, Elgin
Published in 2020 IEEE Sensors (25.10.2020)
Published in 2020 IEEE Sensors (25.10.2020)
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Conference Proceeding
Strain Relaxed High Quality Silicon–Germanium-on-Insulator Substrates Formed by Pulsed Laser Irradiation Technology
Wang, Grace Huiqi, Toh, Eng-Huat, Wang, Xincai, Hoe, Keat-Mun, Tripathy, Sudhinranjan, Samudra, Ganesh S., Yeo, Yee-Chia
Published in Japanese Journal of Applied Physics (01.04.2008)
Published in Japanese Journal of Applied Physics (01.04.2008)
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Journal Article
Low-power and high-sensitivity system-on-chip hall effect sensor
Bin Liu, Yongshun Sun, Yinjie Ding, Cao, Patrick, Liu, Aaron, Shiang Yang Ong, Tiong, Michael, Gong Cheng, Islam, Mohd Nurul, Jain, Ruchil, Tam Lyn Tan, Quek, Elgin, Eng-Huat Toh
Published in 2017 IEEE SENSORS (01.10.2017)
Published in 2017 IEEE SENSORS (01.10.2017)
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Conference Proceeding
Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrate
Goh, Kian-Hui, Cheng, Yuanbing, Lu Low, Kain, Yu Jin Kong, Eugene, Chia, Ching-Kean, Toh, Eng-Huat, Yeo, Yee-Chia
Published in Journal of applied physics (28.01.2013)
Published in Journal of applied physics (28.01.2013)
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Journal Article
Uniaxial strained silicon n-FETs on silicon-germanium-on-insulator substrates with an e-Si0.7Ge0.3 stress transfer layer and source/drain stressors for performance enhancement
Grace Huiqi Wang, Eng-Huat Toh, Yong-Lim Foo, Tripathy, S., Balakumar, S., Guo-Qiang Lo, Samudra, G., Yee-Chia Yeo
Published in ESSDERC 2007 - 37th European Solid State Device Research Conference (01.09.2007)
Published in ESSDERC 2007 - 37th European Solid State Device Research Conference (01.09.2007)
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Conference Proceeding
A Mask-Misalignment Offset Reduction Method for Design of Cross-Like CMOS Hall Devices
Fei Lyu, Zhenyan Zhang, Yifan Pan, Zidi Qing, Shuzhuan He, Li Li, Hongbing Pan, Eng-Huat Toh, Xinfu Liu, Yinjie Ding
Published in 2016 Sixth International Conference on Instrumentation & Measurement, Computer, Communication and Control (IMCCC) (01.07.2016)
Published in 2016 Sixth International Conference on Instrumentation & Measurement, Computer, Communication and Control (IMCCC) (01.07.2016)
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Conference Proceeding
Simulation and design of a germanium L-shaped impact-ionization MOS transistor
Toh, Eng-Huat, Wang, Grace Huiqi, Chan, Lap, Samudra, Ganesh, Yeo, Yee-Chia
Published in Semiconductor science and technology (01.01.2008)
Published in Semiconductor science and technology (01.01.2008)
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Journal Article