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Published in Chemistry of materials (30.11.2004)
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Published in IEEE transactions on electron devices (01.12.2007)
Published in IEEE transactions on electron devices (01.12.2007)
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Low-frequency noise in submicrometer MOSFETs with HfO2, HfO2/Al2O3 and HfAlOx gate stacks
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Published in IEEE transactions on electron devices (01.10.2004)
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Low-frequency noise in TaSiN/HfO2 nMOSFETs and the effect of stress-relieved preoxide interfacial layer
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Published in IEEE transactions on electron devices (01.03.2006)
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Atomic Layer Deposition and Properties of Lanthanum Oxide and Lanthanum-Aluminum Oxide Films
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Published in Chemical vapor deposition (01.03.2006)
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Improved low frequency noise characteristics of sub-micron MOSFETs with TaSiN/TiN gate on ALD HfO2 dielectric
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Published in Microelectronics and reliability (01.08.2007)
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Properties of oxide film atomic layer deposited from tetraethoxy silane, hafnium halides, and water
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Published in Journal of the Electrochemical Society (2004)
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Physical and electrical characteristics of atomic-layer-deposited hafnium dioxide formed using hafnium tetrachloride and tetrakis(ethylmethylaminohafnium)
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Published in Journal of applied physics (15.06.2005)
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Hafnium silicon oxide films prepared by atomic layer deposition
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Fermi-level pinning at the polysilicon/metal oxide interface-Part I
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Published in IEEE transactions on electron devices (01.06.2004)
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Maiti, Bikas, Tobin, Philip J, Okada, Yoshio, Ajuria, Sergio, Reid, Kimberly G, Hegde, Rama I, Kaushik, Vidya
Published in Digest of technical papers - Symposium on VLSI Technology (01.01.1995)
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Surface and interface roughness of ultrathin nitric oxide oxynitride gate dielectric
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Published in Journal of the Electrochemical Society (1998)
Published in Journal of the Electrochemical Society (1998)
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Published in IEEE transactions on electron devices (01.06.2004)
Published in IEEE transactions on electron devices (01.06.2004)
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A low-frequency noise model for advanced gate-stack MOSFETs
Çelik-Butler, Zeynep, Devireddy, Siva Prasad, Tseng, Hsing-Huang, Tobin, Philip, Zlotnicka, Ania
Published in Microelectronics and reliability (01.02.2009)
Published in Microelectronics and reliability (01.02.2009)
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Evaluation of interfacial nitrogen concentration of RTP oxynitrides by reoxidation
OKADA, Y, TOBIN, P. J, LAKHOTIA, V, AJURIA, S. A, HEGDE, R. I, LIAO, J. C, RUSHBROOK, P. P, ARIAS, L. J
Published in Journal of the Electrochemical Society (01.06.1993)
Published in Journal of the Electrochemical Society (01.06.1993)
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Physical and electrical characteristics of atomic-layer-depositedhafnium dioxide formed using hafnium tetrachlorideand tetrakis(ethylmethylaminohafnium)
Triyoso, Dina H., Hegde, Rama I., White, Bruce E., Tobin, Philip J.
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Ten Questions to Help Families Navigate the Great Wealth Transfer
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