Cycle-to-Cycle Intrinsic RESET Statistics in HfO2-Based Unipolar RRAM Devices
SHIBING LONG, XIAOJUAN LIAN, TIANCHUN YE, CAGLI, Carlo, PERNIOLA, Luca, MIRANDA, Enrique, MING LIU, SUNE, Jordi
Published in IEEE electron device letters (01.05.2013)
Published in IEEE electron device letters (01.05.2013)
Get full text
Journal Article
Enhancement of pattern quality in maskless plasmonic lithography via spatial loss modulation
Han, Dandan, Deng, Sen, Ye, Tianchun, Wei, Yayi
Published in Microsystems & nanoengineering (30.03.2023)
Published in Microsystems & nanoengineering (30.03.2023)
Get full text
Journal Article
Thermal stability issue of ultrathin Ti-based silicide for its application in prospective DRAM peripheral 3D FinFET transistors
Liu, Yaodong, Xu, Jing, Gao, Jianfeng, Liu, Jinbiao, Zhang, Dan, Zhou, Xuebing, Sun, Xianglie, Li, Yongliang, Li, Junfeng, Zhao, Chao, Wang, Wenwu, Chen, Dapeng, Ye, Tianchun, Luo, Jun
Published in Journal of materials science. Materials in electronics (01.10.2021)
Published in Journal of materials science. Materials in electronics (01.10.2021)
Get full text
Journal Article
Improved Short Channel Effect Control in Bulk FinFETs With Vertical Implantation to Form Self-Aligned Halo and Punch-Through Stop Pocket
Xu, Miao, Zhu, Huilong, Zhao, Lichuan, Yin, Huaxiang, Zhong, Jian, Li, Junfeng, Zhao, Chao, Chen, Dapeng, Ye, Tianchun
Published in IEEE electron device letters (01.07.2015)
Published in IEEE electron device letters (01.07.2015)
Get full text
Journal Article
Impact of Ge Preamorphization Implantation on Both the Formation of Ultrathin TiSix and the Specific Contact Resistivity in TiSix/n-Si Contacts
Mao, Shujuan, Wang, Guilei, Xu, Jing, Luo, Xue, Zhang, Dan, Duan, Ningyuan, Liu, Shi, Wang, Wenwu, Chen, Dapeng, Li, Junfeng, Zhao, Chao, Ye, Tianchun, Luo, Jun
Published in IEEE transactions on electron devices (01.10.2018)
Published in IEEE transactions on electron devices (01.10.2018)
Get full text
Journal Article
Impact of the Effective Work Function Gate Metal on the Low-Frequency Noise of Gate-All-Around Silicon-on-Insulator NWFETs
Wen Fang, Veloso, Anabela, Simoen, Eddy, Moon-Ju Cho, Collaert, Nadine, Thean, Aaron, Jun Luo, Chao Zhao, Tianchun Ye, Claeys, Cor
Published in IEEE electron device letters (01.04.2016)
Published in IEEE electron device letters (01.04.2016)
Get full text
Journal Article
Growth of SiGe layers in source and drain regions for 10 nm node complementary metal-oxide semiconductor (CMOS)
Wang, Guilei, Kolahdouz, M., Luo, Jun, Qin, Changliang, Gu, Shihai, Kong, Zhenzhen, Yin, Xiaogen, Xiong, Wenjuan, Zhao, Xuewei, Liu, Jinbiao, Yang, Tao, Li, Junfeng, Yin, Huaxiang, Zhu, Huilong, Wang, Wenwu, Zhao, Chao, Ye, Tianchun, Radamson, Henry H.
Published in Journal of materials science. Materials in electronics (2020)
Published in Journal of materials science. Materials in electronics (2020)
Get full text
Journal Article
Experimental investigation of fundamental film properties for Co1−xTix alloying films with different compositions (0 ≤ x≤1)
Zhang, Dan, Zhao, Chao, Luo, Jun, Mao, Shujuan, Wang, Guilei, Xu, Jing, Luo, Xue, Li, Junfeng, Li, Yongliang, Wang, Wenwu, Chen, Dapeng, Ye, Tianchun
Published in Journal of materials science. Materials in electronics (2020)
Published in Journal of materials science. Materials in electronics (2020)
Get full text
Journal Article
Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon
Xu, Buqing, Wang, Guilei, Du, Yong, Miao, Yuanhao, Li, Ben, Zhao, Xuewei, Lin, Hongxiao, Yu, Jiahan, Su, Jiale, Dong, Yan, Ye, Tianchun, Radamson, Henry H.
Published in Nanomaterials (Basel, Switzerland) (05.08.2022)
Published in Nanomaterials (Basel, Switzerland) (05.08.2022)
Get full text
Journal Article
Reduction of NiGe/n- and p-Ge Specific Contact Resistivity by Enhanced Dopant Segregation in the Presence of Carbon During Nickel Germanidation
Ningyuan Duan, Jun Luo, Guilei Wang, Jinbiao Liu, Simoen, Eddy, Shujuan Mao, Radamson, Henry, Xiaolei Wang, Junfeng Li, Wenwu Wang, Chao Zhao, Tianchun Ye
Published in IEEE transactions on electron devices (01.11.2016)
Published in IEEE transactions on electron devices (01.11.2016)
Get full text
Journal Article
Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode
Zhang, Haitao, Kang, Xuanwu, Zheng, Yingkui, Wu, Hao, Wei, Ke, Liu, Xinyu, Ye, Tianchun, Jin, Zhi
Published in Micromachines (Basel) (22.10.2021)
Published in Micromachines (Basel) (22.10.2021)
Get full text
Journal Article
Investigation on Capacitance Collapse Induced by Secondary Capture of Acceptor Traps in AlGaN/GaN Lateral Schottky Barrier Diode
Zhang, Haitao, Kang, Xuanwu, Zheng, Yingkui, Wei, Ke, Wu, Hao, Liu, Xinyu, Ye, Tianchun, Jin, Zhi
Published in Micromachines (Basel) (09.05.2022)
Published in Micromachines (Basel) (09.05.2022)
Get full text
Journal Article
Physically Based Evaluation of Effect of Buried Oxide on Surface Roughness Scattering Limited Hole Mobility in Ultrathin GeOI MOSFETs
Xiaolei Wang, Jinjuan Xiang, Kai Han, Shengkai Wang, Jun Luo, Chao Zhao, Tianchun Ye, Radamson, Henry H., Simoen, Eddy, Wenwu Wang
Published in IEEE transactions on electron devices (01.06.2017)
Published in IEEE transactions on electron devices (01.06.2017)
Get full text
Journal Article
Blended Glial Cell's Spiking Neural Network
Tao, Liying, Li, Pan, Meng, Meihua, Yang, Zonglin, Liu, Xiaozhuang, Hu, Jinhua, Dong, Ji, Qiao, Shushan, Ye, Tianchun, Shang, Delong
Published in IEEE access (2023)
Published in IEEE access (2023)
Get full text
Journal Article