Nanocrystals at MBE-grown GaN/GaAs(001) interfaces
Zsebök, O., Thordson, J.V., Ilver, L., Andersson, T.G.
Published in Applied surface science (09.10.2000)
Published in Applied surface science (09.10.2000)
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Conference Proceeding
Electronic structure of buried Si layers in GaAs(001) as studied by soft-x-ray emission
Nilsson, PO, Kanski, J, Thordson, JV, Andersson, TG, Nordgren, J, Guo, J, Magnuson, M
Published in Physical review. B, Condensed matter (15.09.1995)
Published in Physical review. B, Condensed matter (15.09.1995)
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Influence of N/Ga-flux ratio on optical properties and surface morphology of GaN grown on sapphire(0001) by MBE
Zsebök, O., Thordson, J.V., Zhao, Q.X., Andersson, T.G.
Published in Applied surface science (09.10.2000)
Published in Applied surface science (09.10.2000)
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Conference Proceeding
Characterisation of surface morphological defects in MBE-grown GaN0.1As0.9 layers on GaAs
ZSEBÖK, O, THORDSON, J. V, LIVER, L, SÖDERVALL, U, ANDERSSON, T. G
Published in Applied surface science (09.10.2000)
Published in Applied surface science (09.10.2000)
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Growth and characterization of GaAs/Si/GaAs heterostructures
Thordson, J.V., Songpongs, P., Swenson, G., Andersson, T.G.
Published in Journal of crystal growth (1995)
Published in Journal of crystal growth (1995)
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Two-dimensional limitations when increasing the Si-concentration from δ-doping to thin Si-layers in GaAs
Thordson, J.V., Andersson, T.G., Swenson, G., Södervall, U.
Published in Journal of crystal growth (01.05.1997)
Published in Journal of crystal growth (01.05.1997)
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Journal Article
Two-dimensional limitations when increasing the Si-concentration from δ-doping to thin Si-layers in GaAs
THORDSON, J. V, ANDERSSON, T. G, SWENSON, G, SÖDERVALL, U
Published in Journal of crystal growth (1997)
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Published in Journal of crystal growth (1997)
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