Cointegration of In Situ Doped Silicon-Carbon Source and Silicon-Carbon I-Region in P-Channel Silicon Nanowire Impact-Ionization Transistor
Eng-Huat Toh, Wang, G.H., Lap Chan, Weeks, D., Bauer, M., Spear, J., Thomas, S.G., Samudra, G., Yee-Chia Yeo
Published in IEEE electron device letters (01.07.2008)
Published in IEEE electron device letters (01.07.2008)
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Journal Article
Strain Enhanced nMOS Using In Situ Doped Embedded Si1-xCx S/D Stressors With up to 1.5% Substitutional Carbon Content Grown Using a Novel Deposition Process
VERHEYEN, Peter, MACHKAOUTSAN, Vladimir, ABSIL, Philippe, BIESEMANS, Serge, THOMAS, Shawn G, BAUER, Matthias, WEEKS, Doran, KEMER, Christoph, CLEMENTE, Francesca, BENDER, Hugo, SHAMIRYAN, Denis, LOO, Roger, HOFFMANN, Thomas
Published in IEEE electron device letters (01.11.2008)
Published in IEEE electron device letters (01.11.2008)
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Characterization of nickel Germanide thin films for use as contacts to p-channel Germanium MOSFETs
Spann, J.Y., Anderson, R.A., Thornton, T.J., Harris, G., Thomas, S.G., Tracy, C.
Published in IEEE electron device letters (01.03.2005)
Published in IEEE electron device letters (01.03.2005)
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Journal Article
Strained n-Channel FinFETs Featuring In Situ Doped Silicon-Carbon (\hbox\hbox) Source and Drain Stressors With High Carbon Content
Tsung-Yang Liow, Kian-Ming Tan, Weeks, D., Rinus Lee, Ming Zhu, Keat-Mun Hoe, Chih-Hang Tung, Bauer, M., Spear, J., Thomas, S.G., Samudra, G.S., Balasubramanian, N., Yee-Chia Yeo
Published in IEEE transactions on electron devices (01.09.2008)
Published in IEEE transactions on electron devices (01.09.2008)
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Journal Article
Silicon-Carbon Stressors With High Substitutional Carbon Concentration and In Situ Doping Formed in Source/Drain Extensions of n-Channel Transistors
Hoong-Shing Wong, Kah-Wee Ang, Lap Chan, Keat-Mun Hoe, Chih-Hang Tung, Balasubramanian, N., Weeks, D., Bauer, M., Spear, J., Thomas, S.G., Samudra, G., Yee-Chia Yeo
Published in IEEE electron device letters (01.05.2008)
Published in IEEE electron device letters (01.05.2008)
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Journal Article
Structural characterization of thick, high-quality epitaxial Ge on Si substrates grown by low-energy plasma-enhanced chemical vapor deposition
THOMAS, Shawn G, BHARATAN, Sushil, RAMM, Juergen, ISELLA, Giovanni, VON KÄNEL, Hans, JONES, Robert E, THOMA, Rainer, ZIRKLE, Thomas, EDWARDS, N. V, RAN LIU, XIANG DONG WANG, QIANGHUA XIE, ROSENBLAD, Carsten
Published in Journal of electronic materials (01.09.2003)
Published in Journal of electronic materials (01.09.2003)
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Fabrication and characterization of InGaP/GaAs heterojunction bipolar transistors on GOI substrates
Thomas, S.G., Johnson, E.S., Tracy, C., Maniar, P., Xiuling Li, Roof, B., Hartmann, Q., Ahmari, D.A.
Published in IEEE electron device letters (01.07.2005)
Published in IEEE electron device letters (01.07.2005)
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Journal Article
Charge Trap Layer (CTL) SOI Substrates using Float Zone Wafers Achieving Low Substrate Losses
Libbert, Jeffrey, Jensen, Leif, Sveigaard, Theis Leth, Seacrist, Mike, Hudson, Carissma, Thomas, Shawn G.
Published in 2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) (14.10.2019)
Published in 2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) (14.10.2019)
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Conference Proceeding
High Efficiency Low Temperature Pre-epi Clean Method for Advanced Group IV epi Processing
Machkaoutsan, Vladimir, Weeks, K. Doran, Bauer, Matthias, Maes, Jan Willem, Tolle, John, Thomas, Shawn G., Alian, AliReza, Hikavyy, Andriy, Loo, Roger
Published in ECS transactions (15.03.2013)
Published in ECS transactions (15.03.2013)
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Journal Article
Graded semiconductor layer
SADAKA MARIAM G.,THOMAS SHAWN G.,WHITE TED R.,LIUCHUN LI,BARR ALEXANDER L.,NGUYEN BICH YEN,THEAN VOON YEW
Year of Publication 25.07.2007
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Year of Publication 25.07.2007
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