The effect of non-reactive ions on the properties of PECVD (plasma enhanced chemical vapor deposition) TEOS (tetraethoxysilane) oxides
Get full text
Journal Article
Conference Proceeding
Accurate base and collector current modeling of polysilicon emitter bipolar transistors: Quantification of hole surface recombination velocity
Kizilyalli, I. C., Rambaud, M. M., Ham, T. E., Stevie, F. A., Kahora, P. M., Zaneski, G., Thoma, M. J., Boulin, D. M.
Published in Journal of applied physics (01.03.1996)
Published in Journal of applied physics (01.03.1996)
Get full text
Journal Article
Predictive worst case statistical modeling of 0.8- mu m BICMOS bipolar transistors: a methodology based on process and mixed device/circuit level simulators
Kizilyalli, I.C., Ham, T.E., Singhal, K., Kearney, J.W., Lin, W., Thoma, M.J.
Published in IEEE transactions on electron devices (01.05.1993)
Published in IEEE transactions on electron devices (01.05.1993)
Get full text
Journal Article
High performance 3.3- and 5-V 0.5-μm CMOS technology for ASIC's
KIZILYALLI, I. C, THOMA, M. J, COCHRAN, W. T, FENSTERMAKER, L. R, FREYMAN, R, SUN, W, DUNCAN, A, LYTLE, S. A, MARTIN, E. P, SINGH, R, VITKAVAGE, S. C, BECHTOLD, P. F, KEARNEY, J. W, RAMBAUD, M. M, TWIFORD, M. S
Published in IEEE transactions on semiconductor manufacturing (01.11.1995)
Published in IEEE transactions on semiconductor manufacturing (01.11.1995)
Get full text
Journal Article
A method to predict harmonic distortion in small-geometry MOS analog integrated circuits
Thoma, M.J., Baumann, W.T., Westgate, C.R.
Published in IEEE journal of solid-state circuits (01.02.1987)
Published in IEEE journal of solid-state circuits (01.02.1987)
Get full text
Journal Article
Predictive worst case statistical modeling of 0.8-mu m BICMOSbipolar transistors: a methodology based on process and mixeddevice/circuit level simulators
Kizilyalli, I C, Ham, T E, Singhal, K, Kearney, J W, Lin, W, Thoma, M J
Published in IEEE transactions on electron devices (01.05.1993)
Published in IEEE transactions on electron devices (01.05.1993)
Get full text
Journal Article
High performance 3.3- and 5-V 0.5-mum CMOS technology for ASIC's
Kizilyalli, I C, Thoma, M J, Lytle, S A, Martin, E P, Singh, R, Vitkavage, S C, Bechtold, P F, Kearney, J W, Rambaud, M M, Twiford, M S, Cochran, W T, Fenstermaker, L R, Freyman, R, Sun, Weishi, Duncan, A
Published in IEEE transactions on semiconductor manufacturing (01.11.1995)
Published in IEEE transactions on semiconductor manufacturing (01.11.1995)
Get full text
Journal Article
Three-dimensional characterization of bipolar transistors in a submicron BiCMOS technology using integrated process and device simulation
Pinto, Boulin, Rafferty, Smith, Coughran, Kizilyalli, Thoma
Published in 1992 International Technical Digest on Electron Devices Meeting (1992)
Published in 1992 International Technical Digest on Electron Devices Meeting (1992)
Get full text
Conference Proceeding
Modeling transient diffusion following high energy implantation
Rafferty, C.S., Gossmann, H.-J., Kamgar, A., Jacobson, D.C., Lloyd, E.J., Hillenius, S.J., Vuong, H.-H., Becerro, J., Vaidya, H.M., Lytle, S.A., Thoma, M.J., Luftman, H.S.
Published in International Electron Devices Meeting. Technical Digest (1996)
Published in International Electron Devices Meeting. Technical Digest (1996)
Get full text
Conference Proceeding