Regrowth-Free GaN-Based Complementary Logic on a Si Substrate
Chowdhury, Nadim, Xie, Qingyun, Yuan, Mengyang, Cheng, Kai, Then, Han Wui, Palacios, Tomas
Published in IEEE electron device letters (01.06.2020)
Published in IEEE electron device letters (01.06.2020)
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Journal Article
Gate-Recessed E-mode p-Channel HFET With High On-Current Based on GaN/AlN 2D Hole Gas
Bader, Samuel James, Chaudhuri, Reet, Nomoto, Kazuki, Hickman, Austin, Chen, Zhen, Then, Han Wui, Muller, David A., Xing, Huili Grace, Jena, Debdeep
Published in IEEE electron device letters (01.12.2018)
Published in IEEE electron device letters (01.12.2018)
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Journal Article
4-GHz Modulation Bandwidth of Integrated 2[Formula Omitted]2 LED Array
Chao-Hsin Wu, Chao-Hsin Wu, Walter, G, Han Wui Then, Han Wui Then, Feng, M, Holonyak, N
Published in IEEE photonics technology letters (15.12.2009)
Published in IEEE photonics technology letters (15.12.2009)
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Journal Article
p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si
Chowdhury, Nadim, Lemettinen, Jori, Xie, Qingyun, Zhang, Yuhao, Rajput, Nitul S., Xiang, Peng, Cheng, Kai, Suihkonen, Sami, Then, Han Wui, Palacios, Tomas
Published in IEEE electron device letters (01.07.2019)
Published in IEEE electron device letters (01.07.2019)
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Journal Article
Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices
Bader, Samuel James, Lee, Hyunjea, Chaudhuri, Reet, Huang, Shimin, Hickman, Austin, Molnar, Alyosha, Xing, Huili Grace, Jena, Debdeep, Then, Han Wui, Chowdhury, Nadim, Palacios, Tomas
Published in IEEE transactions on electron devices (01.10.2020)
Published in IEEE transactions on electron devices (01.10.2020)
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Journal Article
Gallium Nitride and Silicon Transistors on 300 mm Silicon Wafers Enabled by 3-D Monolithic Heterogeneous Integration
Then, Han Wui, Radosavljevic, Marko, Jun, Kimin, Koirala, Pratik, Krist, Brian, Talukdar, Tushar, Thomas, Nicole, Fischer, Paul
Published in IEEE transactions on electron devices (01.12.2020)
Published in IEEE transactions on electron devices (01.12.2020)
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Journal Article
A 32-A, 5-V-Input, 94.2% Peak Efficiency High-Frequency Power Converter Module Featuring Package-Integrated Low-Voltage GaN nMOS Power Transistors
Desai, Nachiket, Then, Han Wui, Yu, Jingshu, Krishnamurthy, Harish K., Lambert, William J., Butzen, Nicolas, Weng, Sheldon, Schaef, Christopher, Radhakrishnan, Kaladhar, Ravichandran, Krishnan, Tschanz, James W., De, Vivek
Published in IEEE journal of solid-state circuits (01.04.2022)
Published in IEEE journal of solid-state circuits (01.04.2022)
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Journal Article
A 25.5-31GHz Power Amplifier Using Enhancement-Mode High-K Dielectric GaN MOS-HEMTs in 300mm GaN-on-Si Technology
Yu, Qiang, Then, Han Wui, Momson, Ibukunoluwa, Thomson, Derek, Garrett, Jeffrey, Rami, Said
Published in 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023 (11.06.2023)
Published in 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023 (11.06.2023)
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Conference Proceeding
PBTI in Scaled Oxide Submicron Enhancement Mode High-K Gallium Nitride Transistors
Joy, Soumitra, Joshi, Kaustubh, Zubair, Ahmad, Bader, Samuel, Peck, Jason, Beumer, Michael, Koirala, Pratik, Radosavljevic, Marko, Vora, Heli, Meric, Inanc, Then, Han Wui
Published in 2024 IEEE International Reliability Physics Symposium (IRPS) (14.04.2024)
Published in 2024 IEEE International Reliability Physics Symposium (IRPS) (14.04.2024)
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Conference Proceeding
Advancements in 300 mm GaN-on-Si Technology With Industry's First Circuit Demonstration of Monolithically Integrated GaN and Si Transistors
Yu, Qiang, Farid, Ali A., Momson, Ibukunoluwa, Garrett, Jeffrey, Vora, Heli, Bader, Samuel, Zubair, Ahmad, Koirala, Pratik, Beumer, Michael, Vyatskikh, Andrey, Nordeen, Paul, Hoff, Thomas, Radosavljevic, Marko, Rami, Said, O'Mahony, Frank, Then, Han Wui
Published in IEEE microwave and wireless technology letters (Print) (01.06.2024)
Published in IEEE microwave and wireless technology letters (Print) (01.06.2024)
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Journal Article
Enhancement-Mode 300-mm GaN-on-Si(111) With Integrated Si CMOS for Future mm-Wave RF Applications
Then, Han Wui, Radosavljevic, M., Yu, Q., Latorre-Rey, A., Vora, H., Bader, S., Momson, I., Thomson, D., Beumer, M., Koirala, P., Peck, J., Oni, A., Hoff, T., Jordan, R., Michaelos, T., Nair, N., Nordeen, P., Vyatskikh, A., Ban, I., Zubair, A., Rami, S., Fischer, P.
Published in IEEE microwave and wireless technology letters (Print) (01.06.2023)
Published in IEEE microwave and wireless technology letters (Print) (01.06.2023)
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Journal Article
GaN and Si Transistors on 300mm Si(111) Enabled by 3D Monolithic Heterogeneous Integration
Then, Han Wui, Radosavljevic, M., Agababov, P., Ban, I., Bristol, R., Chandhok, M., Chouksey, S., Holybee, B., Huang, C. Y., Krist, B., Jun, K., Koirala, P., Lin, K., Michaelos, T., Paul, R., Peck, J., Rachmady, W., Staines, D., Talukdar, T., Thomas, N., Tronic, T., Fischer, P., Hafez, W.
Published in 2020 IEEE Symposium on VLSI Technology (01.06.2020)
Published in 2020 IEEE Symposium on VLSI Technology (01.06.2020)
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Conference Proceeding
SEMICONDUCTOR DEVICES WITH RAISED DOPED CRYSTALLINE STRUCTURES
RADOSAVLJEVIC MARKO, GARDNER SANAZ K, THEN HAN WUI, CHAU ROBERT S, SUNG SEUNG HOON, DASGUPTA SANSAPTAK
Year of Publication 10.01.2022
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Year of Publication 10.01.2022
Patent
N- N-CHANNEL GALLIUM NITRIDE TRANSISTORS
RADOSAVLJEVIC MARKO, GARDNER SANAZ K, THEN HAN WUI, CHAU ROBERT S, SUNG SEUNG HOON, DASGUPTA SANSAPTAK
Year of Publication 12.10.2021
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Year of Publication 12.10.2021
Patent
DIRECT BONDING IN MICROELECTRONIC ASSEMBLIES
ALEKSOV ALEKSANDAR, SWAN JOHANNA M, THEN HAN WUI, ELSHERBINI ADEL A, JUN KIMIN, LIFF SHAWNA M, BHARATH KRISHNA, KABIR MOHAMMAD ENAMUL, EID FERAS
Year of Publication 25.03.2022
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Year of Publication 25.03.2022
Patent
MICROELECTRONIC ASSEMBLIES WITH INDUCTORS IN DIRECT BONDING REGIONS
ALEKSOV ALEKSANDAR, SWAN JOHANNA M, THEN HAN WUI, ELSHERBINI ADEL A, JUN KIMIN, LIFF SHAWNA M, PASDAST GERALD S, BHARATH KRISHNA, O'BRIEN KEVIN P, KABIR MOHAMMAD ENAMUL, EID FERAS
Year of Publication 25.03.2022
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Year of Publication 25.03.2022
Patent