Temperature-dependent characteristics of polysilicon and diffused resistors
Chuang, Hung-Ming, Thei, Kong-Beng, Tsai, Sheng-Fu, Liu, Wen-Chau
Published in IEEE transactions on electron devices (01.05.2003)
Published in IEEE transactions on electron devices (01.05.2003)
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A new and improved structure of polysilicon resistor for subquarter micrometer CMOS device applications
Thei, Kong-Beng, Cheng, Chung-Long, Lin, Hsin-Chien, Chang, Tong-Sen, Tsai, Nun-Sian, Lee, Kuo-Hwa, Chuang, Hung-Ming, Tsai, Sheng-Fu, Liu, Wen-Chau
Published in IEEE transactions on electron devices (01.02.2003)
Published in IEEE transactions on electron devices (01.02.2003)
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Characterization of polysilicon resistors in sub-0.25 μm CMOS ULSI applications
Wen-Chau Liu, Kong-Beng Thei, Hung-Ming Chuang, Kun-Wei Lin, Chin-Chuan Cheng, Yen-Shih Ho, Chi-Wen Su, Shyh-Chyi Wong, Chih-Hsien Lin, Diaz, C.H.
Published in IEEE electron device letters (01.07.2001)
Published in IEEE electron device letters (01.07.2001)
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Multiple-route and multiple-state current-voltage characteristics of an InP/AlInGaAs switch for multiple-valued logic applications
Liu, Wen-Chau, Wang, Wei-Chou, Pan, Hsi-Jen, Chen, Jing-Yuh, Cheng, Shiou-Ying, Lin, Kun-Wei, Yu, Kuo-Hui, Thei, Kong-Beng, Cheng, Chin-Chuan
Published in IEEE transactions on electron devices (01.08.2000)
Published in IEEE transactions on electron devices (01.08.2000)
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A novel InGaP/GaAs S-shaped negative-differential-resistance (NDR) switch for multiple-valued logic applications
Liu, Wen-Chau, Tsai, Jung-Hui, Lour, Wen-Shiung, Laih, Lih-Wen, Cheng, Shiou-Ying, Thei, Kong-Beng, Wu, Cheng-Zu
Published in IEEE transactions on electron devices (01.04.1997)
Published in IEEE transactions on electron devices (01.04.1997)
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A new and improved borderless contact (BLC) structure for high-performance Ti-salicide in sub-quarter micron CMOS devices
Liu, Wen-Chau, Thei, Kong-Beng, Wang, Wei-Chou, Pan, Hsi-Jen, Wuu, Shou-Gwo, Lei, Ming-Ta, Wang, Chung-Shu, Cheng, Shiou-Ying
Published in IEEE electron device letters (01.07.2000)
Published in IEEE electron device letters (01.07.2000)
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A novel InP/InAlGaAs negative-differential-resistance heterojunction bipolar transistor (NDR-HBT) with interesting topee-shaped current-voltage characteristics
Liu, Wen-Chau, Wang, Wei-Chou, Chen, Jing-Yuh, Pan, Hsi-Jen, Cheng, Shiou-Ying, Thei, Kong-Beng, Chang, Wen-Lung
Published in IEEE electron device letters (01.10.1999)
Published in IEEE electron device letters (01.10.1999)
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A novel double ion-implant (DII) Ti-salicide technology for high-performance sub-0.25-μm CMOS devices applications
Thei, K-B, Liu, W-C, Chuang, H-M, Lin, K-W, Cheng, C-C, Ho, C-H, Su, C-W, Wuu, S-G, Wang, C-S
Published in IEEE transactions on electron devices (01.08.2001)
Published in IEEE transactions on electron devices (01.08.2001)
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Journal Article
Investigation of temperature-dependent characteristics of an n+-InGaAs/n-GaAs composite doped channel HFET
Liu, Wen-Chau, Yu, Kuo-Hui, Liu, Rong-Chau, Lin, Kun-Wei, Lin, Kuan-Po, Yen, Chih-Hung, Cheng, Chin-Chuan, Thei, Kong-Beng
Published in IEEE transactions on electron devices (01.12.2001)
Published in IEEE transactions on electron devices (01.12.2001)
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Journal Article
Anomalous temperature-dependent characteristics of silicon diffused resistors
Chuang, Hung-Ming, Tsai, Sheng-Fu, Thei, Kong-Beng, Liu, Wen-Chau
Published in Electronics letters (26.06.2003)
Published in Electronics letters (26.06.2003)
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Investigation of temperature-dependent performances of InP/In0.53Ga0.34Al0.13As heterojunction bipolar transistors
Pan, Hsi-Jen, Wang, Wei-Chou, Thei, Kong-Beng, Cheng, Chin-Chuan, Yu, Kuo-Hui, Lin, Kun-Wei, Wu, Cheng-Zu, Liu, Wen-Chau
Published in Semiconductor science and technology (01.12.2000)
Published in Semiconductor science and technology (01.12.2000)
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