“Rule 07” Revisited: Still a Good Heuristic Predictor of p/n HgCdTe Photodiode Performance?
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MBE HgCdTe Technology: A Very General Solution to IR Detection, Described by “Rule 07”, a Very Convenient Heuristic
Tennant, W.E., Lee, Donald, Zandian, Majid, Piquette, Eric, Carmody, Michael
Published in Journal of electronic materials (01.09.2008)
Published in Journal of electronic materials (01.09.2008)
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Small-Pitch HgCdTe Photodetectors
Tennant, W. E., Gulbransen, D. J., Roll, A., Carmody, M., Edwall, D., Julius, A., Dreiske, P., Chen, A., McLevige, W., Freeman, S., Lee, D., Cooper, D. E., Piquette, E.
Published in Journal of electronic materials (01.08.2014)
Published in Journal of electronic materials (01.08.2014)
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Shallow-Etch Mesa Isolation of Graded-Bandgap “W”-Structured Type II Superlattice Photodiodes
Aifer, E. H., Warner, J. H., Canedy, C. L., Vurgaftman, I., Jackson, E. M., Tischler, J. G., Meyer, J. R., Powell, S. P., Olver, K., Tennant, W. E.
Published in Journal of electronic materials (01.07.2010)
Published in Journal of electronic materials (01.07.2010)
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Controlling dark current in type-II superlattice photodiodes
Canedy, C.L., Aifer, E.H., Warner, J.H., Vurgaftman, I., Jackson, E.M., Tischler, J.G., Powell, S.P., Olver, K., Meyer, J.R., Tennant, W.E.
Published in Infrared physics & technology (01.11.2009)
Published in Infrared physics & technology (01.11.2009)
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High-Operating Temperature HgCdTe: A Vision for the Near Future
Lee, D., Carmody, M., Piquette, E., Dreiske, P., Chen, A., Yulius, A., Edwall, D., Bhargava, S., Zandian, M., Tennant, W. E.
Published in Journal of electronic materials (01.09.2016)
Published in Journal of electronic materials (01.09.2016)
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A novel simultaneous unipolar multispectral integrated technology approach for HgCdTe ir detectors and focal plane arrays
TENNANT, W. E, THOMAS, M, MUZILLA, M, STOLTZ, A, DINAN, J. H, KOZLOWSKI, L. J, MCLEVIGE, W. V, EDWALL, D. D, ZANDIAN, M, SPARIOSU, K, HILDEBRANDT, G, GIL, V, ELY, P
Published in Journal of electronic materials (01.06.2001)
Published in Journal of electronic materials (01.06.2001)
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MCT-on-silicon negative luminescence devices with high efficiency
LINDLE, J. R, BEWLEY, W. W, VURGAFTMAN, I, MEYER, J. R, THOMAS, M. L, TENNANT, W. E, EDWALL, D. D, PIQUETTE, E
Published in Journal of electronic materials (01.08.2007)
Published in Journal of electronic materials (01.08.2007)
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HgCdTe negative luminescence devices for cold shielding and other applications
LINDLE, J. R, BEWLEY, W. W, VURGAFTMAN, I, MEYER, J. R, JOHNSON, J. L, THOMAS, M. L, PIQUETTE, E. C, TENNANT, W. E, SMITH, E. P, JOHNSON, S. M
Published in Journal of electronic materials (01.06.2006)
Published in Journal of electronic materials (01.06.2006)
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Molecular beam epitaxial HgCdTe material characteristics and device performance : reproducibility status
BAJAJ, J, ARIAS, J. M, ZANDIAN, M, PASKO, J. G, KOZLOWSKI, L. J, DE WAMES, R. E, TENNANT, W. E
Published in Journal of electronic materials (01.09.1995)
Published in Journal of electronic materials (01.09.1995)
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Commentary: JWST near-infrared detector degradation— finding the problem, fixing the problem, and moving forward
Rauscher, Bernard J., Stahle, Carl, Hill, Robert J., Greenhouse, Matthew, Beletic, James, Babu, Sachidananda, Blake, Peter, Cleveland, Keith, Cofie, Emmanuel, Eegholm, Bente, Engelbracht, C. W., Hall, Donald N. B., Hoffman, Alan, Jeffers, Basil, Jhabvala, Christine, Kimble, Randy A., Kohn, Stanley, Kopp, Robert, Lee, Don, Leidecker, Henning, Lindler, Don, McMurray, Robert E., Misselt, Karl, Mott, D. Brent, Ohl, Raymond, Pipher, Judith L., Piquette, Eric, Polis, Dan, Pontius, Jim, Rieke, Marcia, Smith, Roger, Tennant, W. E., Wang, Liqin, Wen, Yiting, Willmer, Christopher N. A., Zandian, Majid
Published in AIP advances (01.06.2012)
Published in AIP advances (01.06.2012)
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Spatially resolved characterization of HgCdTe materials and devices by scanning laser microscopy
Bajaj, J, Tennant, W E, Zucca, R, Irvine, S J C
Published in Semiconductor science and technology (01.06.1993)
Published in Semiconductor science and technology (01.06.1993)
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MBE HgCdTe heterostructure p-on-n planar infrared photodiodes
ARIAS, J. M, PASKO, J. G, ZANDIAN, M, SHIN, S. H, WILLIAMS, G. M, BUBULAC, L. O, DE WAMES, R. E, TENNANT, W. E
Published in Journal of electronic materials (01.08.1993)
Published in Journal of electronic materials (01.08.1993)
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High performance SWIR HgCdTe detector arrays
Bubulac, L. O., Tennant, W. E., Pasko, J. G., Kozlowski, L. J., Zandian, M., Motamedi, M. E., De Wames, R. E., Bajaj, J., Nayar, N., McLevige, W. V., Gluck, N. S., Melendes, R., Cooper, D. E., Edwall, D. D., Arias, J. M., Hall, R., D’souza, A. I.
Published in Journal of electronic materials (01.06.1997)
Published in Journal of electronic materials (01.06.1997)
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Remote contact LBIC imaging of defects in semiconductors
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Characterization of CdTe for HgCdTe surface passivation
BUBULAC, L. O, TENNANT, W. E, BAJAJ, J, SHENG, J, BRIGHAM, R, VANDERWYCK, A. H. B, ZANDIAN, M, MCLEVIGE, W. V
Published in Journal of electronic materials (01.09.1995)
Published in Journal of electronic materials (01.09.1995)
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Characteristics and uniformity of group V implanted and annealed HgCdTe heterostructure
Bubulac, L O, Bajaj, J, Tennant, W E, Zandian, M
Published in Journal of electronic materials (01.08.1996)
Published in Journal of electronic materials (01.08.1996)
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A 5 mm × 5 mm mid-wavelength infrared HgCdTe photodiode array with negative luminescence efficiency ∼95
LINDLE, J. R, BEWLEY, W. W, VURGAFTMAN, I, MEYER, J. R, JOHNSON, J. L, THOMAS, M. L, PIQUETTE, E. C, TENNANT, W. E
Published in Journal of electronic materials (01.06.2004)
Published in Journal of electronic materials (01.06.2004)
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Negative luminescence from large-area HgCdTe photodiode arrays with 4.8-6.0-μm cutoff wavelengths
LINDLE, J. Ryan, BEWLEY, William W, VURGAFTMAN, Igor, CHUL SOO KIM, MEYER, Jerry R, JOHNSON, J. L, THOMAS, Mason L, PIQUETTE, Eric C, TENNANT, William E
Published in IEEE journal of quantum electronics (01.02.2005)
Published in IEEE journal of quantum electronics (01.02.2005)
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