A novel carrier accumulating structure for 1200V IGBTs without negative capacitance and decreasing breakdown-voltage
Rahman, Md Tasbir, Kimura, Keisuke, Fukami, Takeshi, Konishi, Masaki, Nishiwaki, Tsuyoshi, Saito, Jun, Hamada, Kimimori
Published in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2018)
Published in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2018)
Get full text
Conference Proceeding