Highly flexible and transferable supercapacitors with ordered three-dimensional MnO2/Au/MnO2 nanospike arraysElectronic supplementary information (ESI) available: Photographs of the mechanical robustness test of the Au NSP film and the schematic illustration of point contacts among NSPs are shown in Fig. S1. Optical image of the free-standing Au NSP film and Si stamps with the area of 1.5 cm × 1.5 cm are shown in Fig. S2. SEM images of Au NSPs with the pitches of 0.5 μm, 1 μm, 1.2 μm and 1.5 μm
Gao, Yuan, Jin, Huanyu, Lin, Qingfeng, Li, Xiang, Tavakoli, Mohammad Mahdi, Leung, Siu-Fung, Tang, Wing Man, Zhou, Limin, Wa Chan, Helen Lai, Fan, Zhiyong
Year of Publication 05.05.2015
Year of Publication 05.05.2015
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Journal Article
Highly flexible and transferable supercapacitors with ordered three-dimensional MnO sub(2)/Au/MnO sub(2) nanospike arrays
Gao, Yuan, Jin, Huanyu, Lin, Qingfeng, Li, Xiang, Tavakoli, Mohammad Mahdi, Leung, Siu-Fung, Tang, Wing Man, Zhou, Limin, Wa Chan, Helen Lai, Fan, Zhiyong
Published in Journal of materials chemistry. A, Materials for energy and sustainability (01.05.2015)
Published in Journal of materials chemistry. A, Materials for energy and sustainability (01.05.2015)
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Published in Applied physics express (01.06.2014)
Published in Applied physics express (01.06.2014)
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Journal Article
Highly flexible and transferable supercapacitors with ordered three-dimensional MnO 2 /Au/MnO 2 nanospike arrays
Gao, Yuan, Jin, Huanyu, Lin, Qingfeng, Li, Xiang, Tavakoli, Mohammad Mahdi, Leung, Siu-Fung, Tang, Wing Man, Zhou, Limin, Wa Chan, Helen Lai, Fan, Zhiyong
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Thermal stability of sectorial split-drain magnetic field-effect transistors : RELIABILITY AND VARIABILITY OF DEVICES FOR CIRCUITS AND SYSTEMS
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Published in Microelectronics and reliability (2014)
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Published in Journal of semiconductors (01.03.2015)
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Comparison of interfacial and electrical properties between Al2O3 and ZnO as interface passivation layer of GaAs MOS device with HfTiO gate dielectricProject supported by the National Natural Science Foundation of China (Nos. 61176100, 61274112)
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Published in Journal of semiconductors (01.03.2015)
Published in Journal of semiconductors (01.03.2015)
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Journal Article
Comparison of interfacial and electrical properties between Al 2 O 3 and ZnO as interface passivation layer of GaAs MOS device with HfTiO gate dielectric
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Aqueous Manganese Dioxide Ink for Paper-Based Capacitive Energy Storage Devices
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Improvement of Pentacene Organic Thin-Film Transistor by Using Fluorine Plasma-Treated or Ion-Implanted HfO2 as Gate Dielectric
Han, Chuan Yu, Tang, Wing Man, Lai, P. T.
Published in 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) (01.06.2019)
Published in 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) (01.06.2019)
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