GaN power IC technology on p -GaN gate HEMT platform
Wei, Jin, Tang, Gaofei, Xie, Ruiliang, Chen, Kevin J.
Published in Japanese Journal of Applied Physics (01.04.2020)
Published in Japanese Journal of Applied Physics (01.04.2020)
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Journal Article
Normally-Off LPCVD-SiNx/GaN MIS-FET With Crystalline Oxidation Interlayer
Mengyuan Hua, Jin Wei, Gaofei Tang, Zhaofu Zhang, Qingkai Qian, Xiangbin Cai, Ning Wang, Chen, Kevin J.
Published in IEEE electron device letters (01.07.2017)
Published in IEEE electron device letters (01.07.2017)
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Journal Article
Digital Integrated Circuits on an E-Mode GaN Power HEMT Platform
Gaofei Tang, Kwan, Alex M. H., Wong, Roy K. Y., Jiacheng Lei, Su, R. Y., Yao, F. W., Lin, Y. M., Yu, J. L., Tsai, Tom, Tuan, H. C., Kalnitsky, Alexander, Chen, Kevin J.
Published in IEEE electron device letters (01.09.2017)
Published in IEEE electron device letters (01.09.2017)
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Journal Article
Dynamic R} of GaN-on-Si Lateral Power Devices With a Floating Substrate Termination
Gaofei Tang, Jin Wei, Zhaofu Zhang, Xi Tang, Mengyuan Hua, Hanxing Wang, Chen, Kevin J.
Published in IEEE electron device letters (01.07.2017)
Published in IEEE electron device letters (01.07.2017)
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Journal Article
Low On-Resistance Normally-Off GaN Double-Channel Metal-Oxide-Semiconductor High-Electron-Mobility Transistor
Wei, Jin, Liu, Shenghou, Li, Baikui, Tang, Xi, Lu, Yunyou, Liu, Cheng, Hua, Mengyuan, Zhang, Zhaofu, Tang, Gaofei, Chen, Kevin J.
Published in IEEE electron device letters (01.12.2015)
Published in IEEE electron device letters (01.12.2015)
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Journal Article
2D materials as semiconducting gate for field-effect transistors with inherent over-voltage protection and boosted ON-current
Qian, Qingkai, Lei, Jiacheng, Wei, Jin, Zhang, Zhaofu, Tang, Gaofei, Zhong, Kailun, Zheng, Zheyang, Chen, Kevin J.
Published in NPJ 2D materials and applications (13.06.2019)
Published in NPJ 2D materials and applications (13.06.2019)
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Journal Article
Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in -GaN Gate HEMTs
Wei, Jin, Xie, Ruiliang, Xu, Han, Wang, Hanxing, Wang, Yuru, Hua, Mengyuan, Zhong, Kailun, Tang, Gaofei, He, Jiabei, Zhang, Meng, Chen, Kevin J.
Published in IEEE electron device letters (01.04.2019)
Published in IEEE electron device letters (01.04.2019)
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Journal Article
Ab initio study of impact of nitridation at amorphous-SiN x /GaN interface
Zhang, Zhaofu, Hua, Mengyuan, He, Jiabei, Tang, Gaofei, Qian, Qingkai, Chen, Kevin J.
Published in Applied physics express (01.08.2018)
Published in Applied physics express (01.08.2018)
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Journal Article
Switching Behaviors of On-Chip Photon Source on AlGaN/GaN-on-Si Power HEMTs Platform
Baikui Li, Xi Tang, Gaofei Tang, Jin Wei, Jiannong Wang, Chen, Kevin J.
Published in IEEE photonics technology letters (15.12.2016)
Published in IEEE photonics technology letters (15.12.2016)
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Journal Article
High-Capacitance-Density -GaN Gate Capacitors for High-Frequency Power Integration
Tang, Gaofei, Kwan, M.-H., Su, R.-Y., Yao, F.-W., Lin, Y.-M., Yu, J.-L., Yang, Thomas, Chern, Chan-Hong, Tsai, Tom, Tuan, H. C., Kalnitsky, Alexander, Chen, Kevin J.
Published in IEEE electron device letters (01.09.2018)
Published in IEEE electron device letters (01.09.2018)
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Journal Article
High-performance fully-recessed enhancement-mode GaN MIS-FETs with crystalline oxide interlayer
Mengyuan Hua, Zhaofu Zhang, Qingkai Qian, Jin Wei, Qilong Bao, Gaofei Tang, Chen, Kevin J.
Published in 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) (01.05.2017)
Published in 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) (01.05.2017)
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Conference Proceeding
Impact of substrate termination on dynamic performance of GaN-on-Si lateral power devices
Gaofei Tang, Jin Wei, Zhaofu Zhang, Xi Tang, Mengyuan Hua, Hanxing Wang, Chen, Kevin J.
Published in 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) (01.05.2017)
Published in 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) (01.05.2017)
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Conference Proceeding
Impact of integrated photonic-ohmic drain on static and dynamic characteristics of GaN-on-Si heterojunction power transistors
Xi Tang, Baikui Li, Hanxing Wang, Jin Wei, Gaofei Tang, Zhaofu Zhang, Chen, Kevin J.
Published in 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.06.2016)
Published in 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.06.2016)
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Conference Proceeding
Journal Article
Integration of LPCVD-SiNx gate dielectric with recessed-gate E-mode GaN MIS-FETs: Toward high performance, high stability and long TDDB lifetime
Mengyuan Hua, Zhaofu Zhang, Jin Wei, Jiacheng Lei, Gaofei Tang, Kai Fu, Yong Cai, Baoshun Zhang, Chen, Kevin J.
Published in 2016 IEEE International Electron Devices Meeting (IEDM) (01.12.2016)
Published in 2016 IEEE International Electron Devices Meeting (IEDM) (01.12.2016)
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Conference Proceeding
Monolithic Integration of Gate Driver and Protection Modules With P-GaN Gate Power HEMTs
Xu, Han, Tang, Gaofei, Wei, Jin, Zheng, Zheyang, Chen, Kevin J.
Published in IEEE transactions on industrial electronics (1982) (01.07.2022)
Published in IEEE transactions on industrial electronics (1982) (01.07.2022)
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Journal Article