Highly-reliable TaOx reram technology using automatic forming circuit
Kawai, Ken, Kawahara, Akifumi, Yasuhara, Ryutaro, Muraoka, Shunsaku, Wei, Zhiqiang, Azuma, Ryotaro, Tanabe, Kouhei, Shimakawa, Kazuhiko
Published in 2014 IEEE International Conference on IC Design & Technology (01.05.2014)
Published in 2014 IEEE International Conference on IC Design & Technology (01.05.2014)
Get full text
Conference Proceeding
急性期病院における脳卒中リハビリテーション治療の実践
KITAOKA, SEIGO, YOKAWA, TAIKI, HOSHINO, KENJI, TANABE, KOUHEI, TAJIMA, TAKAHIRO, BABA, MIKOTO
Published in Rigakuryouhou Tochigi (2023)
Published in Rigakuryouhou Tochigi (2023)
Get full text
Journal Article
An 8Mb multi-layered cross-point ReRAM macro with 443MB/s write throughput
Kawahara, A., Azuma, R., Ikeda, Y., Kawai, K., Katoh, Y., Tanabe, K., Nakamura, T., Sumimoto, Y., Yamada, N., Nakai, N., Sakamoto, S., Hayakawa, Y., Tsuji, K., Yoneda, S., Himeno, A., Origasa, K., Shimakawa, K., Takagi, T., Mikawa, T., Aono, K.
Published in 2012 IEEE International Solid-State Circuits Conference (01.02.2012)
Published in 2012 IEEE International Solid-State Circuits Conference (01.02.2012)
Get full text
Conference Proceeding
RESISTANCE CHANGE TYPE NONVOLATILE STORAGE DEVICE AND METHOD OF WRITING THE SAME
SHIMAKAWA, KAZUHIKO, AZUMA, RYOTARO, TANABE, KOUHEI, KAWAHARA, AKIFUMI
Year of Publication 06.06.2013
Get full text
Year of Publication 06.06.2013
Patent
Filament scaling forming technique and level-verify-write scheme with endurance over 107 cycles in ReRAM
Kawahara, A., Kawai, K., Ikeda, Y., Katoh, Y., Azuma, R., Yoshimoto, Y., Tanabe, K., Zhiqiang Wei, Ninomiya, T., Katayama, K., Yasuhara, R., Muraoka, S., Himeno, A., Yoshikawa, N., Murase, H., Shimakawa, K., Takagi, T., Mikawa, T., Aono, K.
Published in 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers (01.02.2013)
Published in 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers (01.02.2013)
Get full text
Conference Proceeding
High-electron-mobility transistor, field-effect transistor, epitaxial substrate, method for manufacturing epitaxial substrate, and method for manufacturing group iii nitride transistor
HASHIMOTO SHIN,KIYAMA MAKOTO,SAKURADA TAKASHI,TANABE TATSUYA,MIURA KOUHEI,MIYAZAKI TOMIHITO
Year of Publication 06.06.2007
Get full text
Year of Publication 06.06.2007
Patent