Element-Selective Observation of Electronic Structure Transition between Semiconducting and Metallic States in Boron-Doped Diamond Using Soft X-ray Emission and Absorption Spectroscopy
Iihara, Junji, Muramatsu, Yasuji, Takebe, Toshihiko, Sawamura, Akitaka, Namba, Akihiko, Imai, Takahiro, Denlinger, Jonathan D., Perera, Rupert C. C.
Published in Japanese Journal of Applied Physics (01.09.2005)
Published in Japanese Journal of Applied Physics (01.09.2005)
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Journal Article
Electrical characterization of lateral P-N junctions grown on (111)A GaAs nonplanar substrates by molecular beam epitaxy
INAI, M, YAMAMOTO, T, FUJII, M, TAKEBE, T, KOBAYASHI, K
Published in Japanese Journal of Applied Physics (1993)
Published in Japanese Journal of Applied Physics (1993)
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Conference Proceeding
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Electroluminescence from lateral P-N junctions grown on (111)A GaAs patterned substrates
INAI, M, YAMAMOTO, T, TAKEBE, T, WATANABE, T
Published in Japanese Journal of Applied Physics (01.12.1993)
Published in Japanese Journal of Applied Physics (01.12.1993)
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Journal Article
Demonstration of Lateral p-n Subband Junctions in Si Delta-Doped Quantum Wells on (111)A Patterned Substrates
Yamamoto, Teiji, Inai, Makoto, Hosoda, Makoto, Toshihiko Takebe, Toshihiko Takebe, Toshihide Watanabe, Toshihide Watanabe
Published in Japanese Journal of Applied Physics (01.10.1993)
Published in Japanese Journal of Applied Physics (01.10.1993)
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Journal Article
Lateral P-N subband junctions fabricated on patterned substrates
YAMAMOTO, T, INAI, M, TAKEBE, T, WATANABE, T
Published in Japanese Journal of Applied Physics (1993)
Published in Japanese Journal of Applied Physics (1993)
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Journal Article
Low diffusivity of dopants in (111)A GaAs
SHINODA, A, YAMAMOTO, T, INAI, M, TAKEBE, T, WATANABE, T
Published in Japanese Journal of Applied Physics (01.10.1993)
Published in Japanese Journal of Applied Physics (01.10.1993)
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Journal Article
Development of a laser chipping technique combined with water jet for retrieval of fuel debris at Fukushima Daiichi Nuclear Power Station
Yamada, Tomonori, Takebe, Toshihiko, Ishizuka, Ippei, Daido, Hiroyuki, Hanari, Toshihide, Shibata, Takuya, Ohmori, Shinya, Kurosawa, Koichi, Sasaki, Go, Nakada, Masahiro, Sakai, Hideaki
Published in Journal of nuclear science and technology (02.12.2019)
Published in Journal of nuclear science and technology (02.12.2019)
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Journal Article
Heat-Treatment Study of Deep-Level Defects in Semi-Insulating Liquid-Encapsulated Czochralski Gallium Arsenide Substrates
Yoshida, Hiroaki, Kiyama, Makoto, Takebe, Toshihiko, Keiichiro Fujita, Keiichiro Fujita, Shin-ichi Akai, Shin-ichi Akai
Published in Japanese Journal of Applied Physics (01.01.1997)
Published in Japanese Journal of Applied Physics (01.01.1997)
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Journal Article
LASER PROCESSING DEVICE AND LASER PROCESSING METHOD
NAKADA MASAHIRO, SASAKI TAKESHI, KUROSAWA KOICHI, SAKAI HIDEAKI, HANARI TOSHIHIDE, OMORI SHINYA, YAMADA TOMONORI, TAKEBE TOSHIHIKO, OMICHI HIROYUKI, ISHIZUKA IPPEI
Year of Publication 18.01.2018
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Year of Publication 18.01.2018
Patent
Low resistance NiAuGe/Au ohmic contacts on N-type (111)A GaAs
LOVELL, D. R, TAKEBE, T, YAMAMOTO, T, INAI, M, KOBAYASHI, K, WATANABE, T
Published in Japanese Journal of Applied Physics (01.11.1993)
Published in Japanese Journal of Applied Physics (01.11.1993)
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Journal Article
Estimation of the surface state density of N-type (111)A GaAs grown using molecular beam epitaxy
LOVELI, D. R, TAKEBE, T, YAMAMOTO, T, INAI, M, KOBAYASHI, K, WATANABE, T
Published in Japanese Journal of Applied Physics (01.12.1992)
Published in Japanese Journal of Applied Physics (01.12.1992)
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Journal Article
CONTROL DEVICE ADAPTED FOR FUSING AND BREAKING USING LASER BEAM
NAKADA MASAHIRO, HANARI TOSHIHIDE, KAMOI RYOSUKE, HIRAI HIRONORI, YAMADA TOMONORI, TSUBOI AKIHIKO, SAKAI HIDEAKI, TAKEYAMA SHINICHI, MATSUNAGA YUKIHIRO, TAKEBE TOSHIHIKO, MURAMATSU TOSHIHARU, USUI SHUZO, SHAMOTO HIDEYASU
Year of Publication 03.08.2015
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Year of Publication 03.08.2015
Patent
Characteristics of GaAs epitaxial films grown on (111) and (110) GaAs substrates by MBE
TAKEBE, Toshihiko, YAMAMOTO, Teiji, FUJII, Mototada, KOBAYASHI, Kikuo
Published in Oyo Buturi (10.02.1992)
Published in Oyo Buturi (10.02.1992)
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Journal Article
Two-acceptor levels in the band gap of boron-doped diamond semiconductors analyzed by soft x-ray absorption spectroscopy and DV-Xa calculations
Muramatsu, Yasuji, Takebe, Toshihiko, Sawamura, Akitaka, Iihara, Junji, Nanba, Akihiko, Imai, Takahiro, Denlinger, Jonathan D, Perera, Rupert C C
Published in X-ray spectrometry (01.05.2007)
Published in X-ray spectrometry (01.05.2007)
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