NITRIDE SEMICONDUCTOR TRANSISTOR DEVICE
SUWA TOMOYUKI, TAKATANI SHINICHIRO, TERAMOTO AKINOBU, KURODA MICHIHITO, SHIRATA RIICHIRO
Year of Publication 18.03.2021
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Year of Publication 18.03.2021
Patent
Fabrication of InAlAs/InGaAs high-electron-mobility transistors using ArF-excimer-laser-assisted damage-free highly selective InGaAs/InAlAs etching
TAKAZAWA, H, TAKATANI, S, HIGUCHI, K, KUDO, M
Published in Japanese Journal of Applied Physics (01.12.1996)
Published in Japanese Journal of Applied Physics (01.12.1996)
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