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"TAKASHIMA DAISABURO"
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Test method for ferroelectric memory
by
TAKASHIMA DAISABURO
,
MIYAKAWA TADASHI
Year of Publication
03.02.2009
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Nonvolatile semiconductor memory device having ferroelectric capacitors
by
Takashima
,
Daisaburo
Year of Publication
14.01.2003
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383
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Nonvolatile semiconductor memory device having ferroelectric capacitors
by
TAKASHIMA DAISABURO
Year of Publication
14.01.2003
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Semiconductor memory device
by
TAKASHIMA
,
DAISABURO
Year of Publication
08.01.2003
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Semiconductor memory device
by
TAKASHIMA DAISABURO
Year of Publication
26.11.2002
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386
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Semiconductor memory device
by
Takashima
,
Daisaburo
Year of Publication
26.11.2002
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387
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SEMICONDUCTOR MEMORY DEVICE
by
TAKASHIMA DAISABURO
,
SHIGA HIDEHIRO
Year of Publication
11.12.2008
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Semiconductor memory device and various systems mounting them
by
Takashima
,
Daisaburo
Year of Publication
29.10.2002
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Semiconductor memory device and various systems mounting them
by
TAKASHIMA DAISABURO
Year of Publication
29.10.2002
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Temperature sensing circuit, voltage generation circuit, and semiconductor storage device
by
Ogiwara, Ryu
,
Takashima
,
Daisaburo
Year of Publication
28.10.2008
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Temperature sensing circuit, voltage generation circuit, and semiconductor storage device
by
TAKASHIMA DAISABURO
,
OGIWARA RYU
Year of Publication
28.10.2008
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Memory system
by
TAKASHIMA DAISABURO
,
HATSUDA KOSUKE
,
NAGADOMI YASUSHI
Year of Publication
09.07.2013
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393
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Semiconductor device
by
Takashima
,
Daisaburo
Year of Publication
27.06.2002
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394
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Semiconductor device
by
TAKASHIMA DAISABURO
Year of Publication
27.06.2002
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395
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Power supply voltage control circuit
by
Ogiwara, Ryu
,
Takashima
,
Daisaburo
Year of Publication
16.09.2008
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Power supply voltage control circuit
by
TAKASHIMA DAISABURO
,
OGIWARA RYU
Year of Publication
16.09.2008
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VOLTAGE GENERATING CIRCUIT
by
TAKASHIMA DAISABURO
,
OGIWARA RYU
Year of Publication
14.08.2008
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Ferroelectric memory to be tested by applying disturbance voltage to a plurality of ferroelectric capacitors at once in direction to weaken polarization, and method of testing the same
by
Ogiwara, Ryu
,
Takashima
,
Daisaburo
Year of Publication
12.08.2008
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Ferroelectric memory to be tested by applying disturbance voltage to a plurality of ferroelectric capacitors at once in direction to weaken polarization, and method of testing the same
by
TAKASHIMA DAISABURO
,
OGIWARA RYU
Year of Publication
12.08.2008
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SEMICONDUCTOR MEMORY DEVICE
by
TAKASHIMA DAISABURO
,
OGIWARA RYU
Year of Publication
31.07.2008
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