Microscopic mechanisms of nitrogen doping in silicon carbide during epitaxial growth
Yamauchi, Souichiro, Mizushima, Ichiro, Yoda, Takashi, Oshiyama, Atsushi, Shiraishi, Kenji
Published in Applied physics express (01.08.2024)
Published in Applied physics express (01.08.2024)
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Journal Article
Self-assembly of a silica-surfactant nanocomposite in a porous alumina membrane
Teramae, Norio, Yamaguchi, Akira, Uejo, Fumiaki, Yoda, Takashi, Uchida, Tatsuya, Tanamura, Yoshihiko, Yamashita, Tomohisa
Published in Nature materials (01.05.2004)
Published in Nature materials (01.05.2004)
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Journal Article
Diffusivities of Tris(2,2′-bipyridyl)ruthenium inside Silica-Nanochannels Modified with Alkylsilanes
YAMAGUCHI, Akira, YODA, Takashi, SUZUKI, Shintaro, MORITA, Kotaro, TERAMAE, Norio
Published in Analytical Sciences (01.12.2006)
Published in Analytical Sciences (01.12.2006)
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Journal Article
Structural Studies of High-Performance Low-k Dielectric Materials Improved by Electron-Beam Curing
Yoda, Takashi, Nakasaki, Yasushi, Hashimoto, Hideki, Fujita, Keiji, Miyajima, Hideshi, Shimada, Miyoko, Nakata, Rempei, Kaji, Naruhiko, Hayasaka, Nobuo
Published in Japanese Journal of Applied Physics (01.01.2005)
Published in Japanese Journal of Applied Physics (01.01.2005)
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Journal Article
Successful treatment with vincristine of an infant with intractable Kasabach–Merritt syndrome
TAKI, MASASHI, OHI, CHIAI, YAMASHITA, ATSUKI, KOBAYASHI, MIWAKO, KOBAYASHI, NORIAKI, YODA, TAKASHI, HORIUCHI, TAKESHI, AIKYOU, MIHO, HORIKOSHI, YASUO, MIMAYA, JUNICHI
Published in Pediatrics international (01.02.2006)
Published in Pediatrics international (01.02.2006)
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Journal Article
First-principles and thermodynamic analysis for gas phase reactions and structures of the SiC(0001) surface under conventional CVD and Halide CVD environments
Chokawa, Kenta, Daigo, Yoshiaki, Mizushima, Ichiro, Yoda, Takashi, Shiraishi, Kenji
Published in Japanese Journal of Applied Physics (01.08.2021)
Published in Japanese Journal of Applied Physics (01.08.2021)
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Journal Article
High-Performance SiOF Film Fabricated Using a Dual-Frequency-Plasma Chemical Vapor Deposition system
Yoda, Takashi, Fujita, Keiji, Miyajima, Hideshi, Nakata, Rempei, Nishiyama, Yukio, Nakasaki, Yasushi, Hayasaka, Nobuo
Published in Japanese Journal of Applied Physics (01.09.2004)
Published in Japanese Journal of Applied Physics (01.09.2004)
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Journal Article
Design and fabrication results of Z-gate layout MOSFETs for radiation hardness integrated circuit
Kuroki, Kaito, Kimura, Arisa, Hirakawa, Kenji, Iwase, Masayuki, Ogasawara, Munehiro, Yoda, Takashi, Ishihara, Noboru, Ito, Hiroyuki
Published in Japanese Journal of Applied Physics (01.04.2023)
Published in Japanese Journal of Applied Physics (01.04.2023)
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Journal Article
Stranski–Krastanov Growth of Tungsten during Chemical Vapor Deposition Revealed by Micro-Auger Electron Spectroscopy
Noda, Suguru, Tsumura, Takeshi, Fukuhara, Jota, Yoda, Takashi, Komiyama, Hiroshi, Shimogaki, Yukihiro
Published in Japanese Journal of Applied Physics (01.10.2004)
Published in Japanese Journal of Applied Physics (01.10.2004)
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Journal Article
Simulation of a ring oscillator operation during γ-ray irradiation using the TID response model of MOSFETs and its experimental verification
Kimura, Arisa, Kuroki, Kaito, Yoshida, Ryoichiro, Hirakawa, Kenji, Iwase, Masayuki, Ogasawara, Munehiro, Yoda, Takashi, Ishihara, Noboru, Ito, Hiroyuki
Published in Japanese Journal of Applied Physics (01.04.2023)
Published in Japanese Journal of Applied Physics (01.04.2023)
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Journal Article
Two-pads per electrode in-situ test structure for micron-scale flip-chip bonding reliability of chip-on-chip device
Ebihara, Yusuke, Mizushima, Ayako, Yoda, Takashi, Hirakawa, Kenji, Iwase, Masayuki, Ogasawara, Munehiro, Higo, Akio, Ochiai, Yukinori, Mita, Yoshio
Published in 2022 IEEE 34th International Conference on Microelectronic Test Structures (ICMTS) (21.03.2022)
Published in 2022 IEEE 34th International Conference on Microelectronic Test Structures (ICMTS) (21.03.2022)
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Conference Proceeding
Dependence of total ionizing dose effect of nMOS transistors on the on/off duty ratio of a gate voltage
Ogasawara, Munehiro, Yoshida, Ryoichiro, Oshima, Yuta, Ando, Motoki, Kimura, Arisa, Hirakawa, Kenji, Iwase, Masayuki, Nabeya, Shinsuke, Yoda, Takashi, Ishihara, Noboru, Ito, Hiroyuki
Published in Japanese Journal of Applied Physics (01.10.2021)
Published in Japanese Journal of Applied Physics (01.10.2021)
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Journal Article
Origin and suppression of critical deep pit in high-electron-mobility transistor structure using GaN on Si technology with strained-layer superlattice
Miyano, Kiyotaka, Tsukui, Masayuki, Nago, Hajime, Iyechika, Yasushi, Kobayashi, Takehiko, Ishikawa, Yoshitaka, Takahashi, Hideshi, Mitani, Shinichi, Yoda, Takashi
Published in Japanese Journal of Applied Physics (01.07.2018)
Published in Japanese Journal of Applied Physics (01.07.2018)
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Journal Article
Total ionizing dose effect on 2-D array data transfer ICs designed and fabricated by 0.18 μm CMOS technology
Yoda, Takashi, Ishihara, Noboru, Oshima, Yuta, Ando, Motoki, Kashiwagi, Kohei, Yoshida, Ryoichiro, Kimura, Arisa, Kuroki, Kaito, Nabeya, Shinsuke, Hirakawa, Kenji, Iwase, Masayuki, Ogasawara, Munehiro, Ito, Hiroyuki
Published in Japanese Journal of Applied Physics (01.05.2022)
Published in Japanese Journal of Applied Physics (01.05.2022)
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Journal Article
Minority carrier lifetime extraction methodology based on parallel pn diodes with a field plate
Nishizawa, M., Hoshii, T., Wakabayashi, H., Tsutsui, K., Daigo, Y., Mizushima, I., Yoda, T., Kakushima, K.
Published in Japanese Journal of Applied Physics (01.07.2022)
Published in Japanese Journal of Applied Physics (01.07.2022)
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Journal Article