SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
TAKAOKA HIROMICHI, NAKASHIBA YASUTAKA, SONODA KENICHIRO, TSUCHIYA HIDEAKI, SUZUMURA NAOHITO
Year of Publication 14.03.2023
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Year of Publication 14.03.2023
Patent
Direct Measurement of Transient Drain Currents in Partially-Depleted SOI N-Channel MOSFETs Using a Nuclear Microprobe for Highly Reliable Device Designs
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Published in Japanese Journal of Applied Physics (2000)
Published in Japanese Journal of Applied Physics (2000)
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Journal Article
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
SONODA, Kenichiro, TSUCHIYA, Hideaki, NAKASHIBA, Yasutaka, TAKAOKA, Hiromichi, SUZUMURA, Naohito
Year of Publication 02.03.2023
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Year of Publication 02.03.2023
Patent
Semiconductor device and method of manufacturing the same
TAKAOKA, HIROMICHI, SUZUMURA, NAOHITO, SONODA, KENICHIRO, TSUCHIYA, HIDEAKI, NAKASHIBA, YASUTAKA
Year of Publication 16.03.2023
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Year of Publication 16.03.2023
Patent